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TOSHIBA
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| Part No. |
TIM4450-4U
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| OCR Text |
.... mS 900 V A V C/W -1.0 -5 -2.5 2.6 4.5 -4.0 3.5 6.0
Rth(c-c) Channel to Case
The information contained herein is presented only...11D1B)
0.60.15 4-C1.2 4.0 MIN. Unit in mm
Gate Source Drain
12.90.2
3.20.3
170.3
2... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
68.69K /
4 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM4450-8SL
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| OCR Text |
....5 -42 TYP. MAX. 39.5 9.5 2.2 36 -45 2.2 2.6 0.6 2.6 80
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
CHARACTERISTICS Transconducta...11D1B)
0.6 0.15 Unit in mm 4.0 MIN.
4-C1.2
*
12.9 0.2
3.2 0.3
* Gate Source Drai... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
85.65K /
2 Page |
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it Online |
Download Datasheet |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM5359-8SL
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| OCR Text |
....0 -42 TYP. MAX. 39.5 9.0 2.2 35 -45 2.2 2.6 0.6 2.6 80
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )
CHARACTERISTICS Transconducta...11D1B)
0.6 0.15 Unit in mm 4.0 MIN.
4-C1.2
*
12.9 0.2
3.2 0.3
* Gate Source Drai... |
| Description |
MICROWAVE POWER GaAs FET
From old datasheet system
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| File Size |
84.34K /
2 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM6472-8UL
|
| OCR Text |
... -44
TYP. MAX. 39.5 9.5 2.2 36 -47 2.2 2.6 0.6 2.6 80
f = 6.4 to 7.2GHz
add
IM3
dBc A C
Recommended gate resistan...11D1B)
0.60.15 4-C1.2 4.0 MIN. Unit in mm
(1)
(1) Gate (2) Source
12.90.2
3.20.3
(2)... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
44.02K /
4 Page |
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it Online |
Download Datasheet |
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|
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM7179-8UL
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| OCR Text |
... dBm 38.5 8.0 -44 39.5 9.0 2.2 35 -47 2.2 2.6 0.6 2.6 80
f = 7.1 - 7.9GHz
add
IM3
dBc A C
VDS X IDS X Rth(c-c)
EL...11D1B)
0.60.15 4-C1.2 4.0 MIN. Unit in mm
Gate Source Drain
12.90.2
3.20.3
170.3
2... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
68.68K /
4 Page |
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it Online |
Download Datasheet |
| |
|
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TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM7785-4UL
|
| OCR Text |
.... mS 900 V A V C/W -1.0 -5 -2.5 2.6 4.5 -4.0 3.5 6.0
Rth(c-c) Channel to Case
The information contained herein is presented only...11D1B)
0.60.15 4-C1.2 4.0 MIN. Unit in mm
Gate Source Drain
12.90.2
3.20.3
170.3
2... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
68.41K /
4 Page |
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it Online |
Download Datasheet |
| |
|
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
TIM7785-8UL
|
| OCR Text |
... dBm 38.5 7.5 -44 39.5 8.5 2.2 35 -47 2.2 2.6 0.6 2.6 80
f = 7.7 - 8.5GHz
add
IM3
dBc A C
VDS X IDS X Rth(c-c)
EL...11D1B)
0.60.15 4-C1.2 4.0 MIN. Unit in mm
Gate Source Drain
12.90.2
3.20.3
170.3
2... |
| Description |
MICROWAVE POWER GaAs FET
|
| File Size |
68.72K /
4 Page |
View
it Online |
Download Datasheet |
|
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