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1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281 Search Time::2.828ms
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				INTERSIL[Intersil Corporation]
Part No.	FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), TC = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) 20 ...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
File Size	73.87K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 60 60 60 60 60 TYPICAL RANGE () 43 36 36 36 31 31 31 3...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
File Size	51.24K / 8 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics ST Microelectronics SGS Thomson Microelectronics
Part No.	BZW045V8 BZW045V8B BZW04-10 BZW04-102 BZW04-102B BZW04-10B BZW04-128 BZW04-128B BZW04-13 BZW04-13B BZW04-15 BZW04-154 BZW04-154B BZW04-15B BZW04-171 BZW04-171B BZW04-188 BZW04-188B BZW04-19 BZW04-19B BZW04-20 BZW04-20B BZW04-213 BZW04-213B BZW04-23 BZW04-23B BZW04-256 BZW04-256B BZW04-26 BZW04-26B BZW04-273 BZW04-273B BZW04-28 BZW04-28B BZW04-299 BZW04-299B BZW04-31 BZW04-31B BZW04-33 BZW04-33B BZW04-342 BZW04-342B BZW04-376 BZW04-376B BZW04-40 BZW04-40B BZW04-48 BZW04-48B BZW04-58 BZW04-58B BZW04-5V8 BZW04-5V8B BZW04-6V4 BZW04-6V4B BZW04-70 BZW04-70B BZW04-85 BZW04-85B BZW04-8V5 BZW04-8V5B BZW04376 BZW04376B BZW04-5V8/376 BZW04-5V8B/376B
OCR Text	...ial pulse duration. PPP (W) 1e5 Tj initial = 25C 1E4 1E3 1E2 1E1 0.001 0.01 0.1 1 tp (ms ) EXPO. 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp = 20 s________ tp = 1 ms------...
Description	Low Power OFF-Line SMPS Primary Switcher TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极单向)) TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极双向)) () TRANSILTM
File Size	80.81K / 6 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58DVM82A1FT00 TC58DVM72A TC58DVM82F1FT00 TC58DAM72F1FT00 TC58DAM82A1FT00 TC58DAM72A1FT00 TC58DAM82F1FT00 TC58DVM72A1FT TC58DVM72F1FT TC58DVMXXX
OCR Text	...7V to 3.6V Program/Erase Cycles 1e5 cycle (with ECC) Access time Cell array to register 25 s max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 A max....
Description	Flash - NAND 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
File Size	364.95K / 34 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH58100FT
OCR Text	...V to 3.6 V Program/Erase Cycles 1e5 cycle (with ECC) Access time Cell array to register 25 ms max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 100 mA P...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	419.39K / 43 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH58NVG1S3AFT TH58NVG1S3AFT05
OCR Text	...V to 3.6 V Program/Erase Cycles 1e5 Cycles(With ECC) Access time Cell array to register 25 s max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 A max ...
Description	Flash - NAND TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	364.12K / 32 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 FN4526
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 60 60 60 60 60 TYPICAL RANGE () 43 36 36 36 31 31 31 3...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs From old datasheet system
File Size	48.80K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	BZW50-10 BZW50-100 BZW50-100B BZW50-10B BZW50-12 BZW50-120 BZW50-120B BZW50-12B BZW50-15 BZW50-150 BZW50-150B BZW50-15B BZW50-18 BZW50-180 BZW50-180B BZW50-18B BZW50-22 BZW50-22B BZW50-27 BZW50-27B BZW50-33 BZW50-33B BZW50-39 BZW50-39B BZW50-47 BZW50-47B BZW50-56 BZW50-56B BZW50-68 BZW50-68B BZW50-82 BZW50-82B
OCR Text	...7 Tj initial = 25o C 1E6 1e5 1E4 1E3 tp (ms ) EXPO. 1E2 0.001 0.01 0.1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponential waveform tp = 20 s________ tp = 1 ms------------tp = 10...
Description	MB 6C 6#20 SKT PLUG RoHS Compliant: No TRANSILTM MB 10C 10#20 PIN PLUG RoHS Compliant: No MB 10C 10#20 SKT PLUG RoHS Compliant: No TRANSIL Diode for High Overvoltage Protection(5000W、用于过电压保护的TRANSIL二极双向)) TRANSIL Diode for High Overvoltage Protection(5000W、用于过电压保护的TRANSIL二极单向))
File Size	76.90K / 5 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. 意法半导 ST Microelectronics Diotec Elektronische SGS Thomson Microelectronics
Part No.	BZW06-10 BZW06-102 BZW06-102B BZW06-10B BZW06-128 BZW06-128B BZW06-13 BZW06-13B BZW06-15 BZW06-154 BZW06-154B BZW06-15B BZW06-171 BZW06-171B BZW06-188 BZW06-188B BZW06-19 BZW06-19B BZW06-20 BZW06-20B BZW06-213 BZW06-213B BZW06-23 BZW06-23B BZW06-256 BZW06-256B BZW06-26 BZW06-26B BZW06-273 BZW06-273B BZW06-28 BZW06-28B BZW06-299 BZW06-299B BZW06-31 BZW06-31B BZW06-33 BZW06-33B BZW06-342 BZW06-342B BZW06-376 BZW06-376B BZW06-40 BZW06-40B BZW06-48 BZW06-48B BZW06-58 BZW06-58B BZW06-5V8 BZW06-5V8B BZW06-6V4 BZW06-6V4B BZW06-70 BZW06-70B BZW06-85 BZW06-85B BZW06-8V5 BZW06-8V5B BZW065V8 BZW06-9V4 BZW06-5V8/376 BZW06-5V8B/376B BZW06376B BZW06-28BRL BZW06-15BRL BZW04-10 -BZW04-10
OCR Text	...ial pulse duration. Ppp (W) 1e5 Tj initial = 25o C 1E4 1E3 1E2 tp (mS ) EXPO. 1E1 0.001 0.01 0 .1 1 10 100 Fig. 3 : Clamping voltage versus peak pulse current. Exponentialwaveform tp = 20 s________ tp =...
Description	TRANSIL Diode for High Overvoltage Protection(400W???浜???靛?淇????RANSIL浜??绠????)) TRANSIL Diode for High Overvoltage Protection(400W、用于过电压保护的TRANSIL二极单向)) TRANSIL二极管（400W，用于过电压保护的TRANSIL二极管（单向），高过电压保护 TRANSIL Diode for High Overvoltage Protection(600W、用于过电压保护的TRANSIL二极双向)) TRANSIL二极管（600W，用于过电压保护的TRANSIL二极管（双向），高过电压保护 2 A step-down switching regulator 3 V FIPS-140 security supervisor with battery switchover Complete DDR2/3 memory power supplies controller TRANSIL Diode for High Overvoltage Protection(600W、用于过电压保护的TRANSIL二极单向)) () TRANSILTM TRANSIL TM Unidirectional and bidirectional Transient Voltage Suppressor Diodes
File Size	82.01K / 6 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSL110R1 FSL110D FSL110D1 FSL110D3 FN4224 FSL110R4 FSL110R FSL110R3
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description	From old datasheet system 3.5A/ 100V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 3.5A, 100V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
File Size	58.10K / 8 Page	View it Online	Download Datasheet

For 1e5 Found Datasheets File :: 281 Search Time::2.828ms
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