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  1990-09 Datasheet PDF File

For 1990-09 Found Datasheets File :: 778    Search Time::1.14ms    
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    MRF18060BLR3 MRF18060B MRF18060BLSR3

Freescale Semiconductor, Inc
Part No. MRF18060BLR3 MRF18060B MRF18060BLSR3
OCR Text ...tions. Specified for GSM 1930 - 1990 MHz. * GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain -- 13 dB (Typ) @ 60 Watts CW E...09 Microstrip 1.00 x 0.09 Microstrip 0.51 x 0.94 Microstrip 0.59 x 0.98 Microstrip 0.79 x 0.09 Micro...
Description RF Power Field Effect Transistor

File Size 322.25K  /  12 Page

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    74F112 I74F112D I74F112N N74F112D N74F112N 74F112_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 74F112 I74F112D I74F112N N74F112D N74F112N 74F112_2
OCR Text 1990 Feb 09 Philips Semiconductors Philips Semiconductors Product specification Dual J-K negative edge-triggered flip-flop 74F112 FEATURE * Industrial temperature range available (-40C to +85C) DESCRIPTION The 74F112,...
Description From old datasheet system
Dual J-K negative edge-triggered flip-flop

File Size 84.00K  /  10 Page

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    PTFB191501E PTFB191501F

Infineon Technologies AG
Part No. PTFB191501E PTFB191501F
OCR Text ... cdma applications from 1930 to 1990 mhz. features include input and output matching, and thermally-enhanced, rohs-compliant package with sl...09-09 ptfb191501e ptfb191501f confidential, limited internal distribution *see infineon distributor ...
Description Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 ?1990 MHz

File Size 288.13K  /  15 Page

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    I74F86N N74F86N N74F86D 74F86 I74F86D 74F86_2 N74F86N602 I74F86N602

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. I74F86N N74F86N N74F86D 74F86 I74F86D 74F86_2 N74F86N602 I74F86N602
OCR Text 1990 Feb 09 Philips Semiconductors Philips Semiconductors Product specification Quad 2-input Exclusive-OR gate 74F86 FEATURE * Industrial temperature range available (-40C to +85C) TYPE TYPICAL PROPAGATION DELAY 4.3ns ...
Description From old datasheet system
Quad 2-input exclusive-OR gate - Description: Quad 2-Input EXCLUSIVE-OR Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -1/ 20 mA ; Propagation delay: 4.2 ns; Voltage: 4.5-5.5 V; Package: Always Pb-free

File Size 70.35K  /  8 Page

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    856565-15

TriQuint Semiconductor
Part No. 856565-15
OCR Text ...imum insertion loss 1930 - 1990 mhz - 2.2 2.6 db absolute attenuation 10 - 1850 mhz 1850 - 1910 mhz 2040 - ...09 ?triquint semiconductor, inc. pa ge 7 of 11 pcs electrical specifications (1) opera...
Description    881.5/1960 MHz SAW Filter

File Size 497.42K  /  11 Page

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    飞思卡尔半导体(中国)有限公司
Part No. MRF18090BSR3
OCR Text ...c, i dq = 750 ma, f = 1930 - 1990 mhz) g ps 12 13.5 ? db drain efficiency @ 90 w (1) (v dd = 26 vdc, i dq = 750 ma, f = 1930 - 1990 ...09 microstrip z2 printed inductance z3 printed inductance (butterfly) z4 0.70 x 0.09 microstr...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外

File Size 385.00K  /  8 Page

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    ECP103G ECP103G-PCB2650 ECP103G-PCB2450 ECP103D-PCB2450 ECP103D-PCB2650 ECP103 ECP103D

Electronic Theatre Controls, Inc.
WJ Communication. Inc.
ETC
WJ Communications
Part No. ECP103G ECP103G-PCB2650 ECP103G-PCB2450 ECP103D-PCB2450 ECP103D-PCB2650 ECP103 ECP103D
OCR Text ...C -40C 1940 1950 1960 1970 1980 1990 S22 (dB) S22 vs. Frequency 0 -5 -10 -15 -20 -25 1930 +25 C +85 C -40C 1940 1950 1960 1970 1980 1990 14 12 10 8 1930 +25C +85C -40C 1940 1950 1960 1970 1980 1990 Frequency (MHz) -25 1930 ...
Description 1 Watt, High Linearity InGaP HBT Amplifier 1瓦特,高线性InGaP HBT功率放大
1 Watt/ High Linearity InGaP HBT Amplifier

File Size 379.76K  /  5 Page

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    MRF18090B MRF18090BS

Freescale Semiconductor, Inc
Motorola, Inc
Part No. MRF18090B MRF18090BS
OCR Text ...6 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Drain Efficiency @ 90 W (1) (VDD = 26 Vdc, IDQ = 750 mA, f = 1930 - 1990 MHz) Input Return Loss (1...09 Microstrip Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 PCB Printed Inductance Printed Inductance (Butterfly...
Description MRF18090B, MRF18090BS 1.90-1.99 GHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 170.67K  /  8 Page

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