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  11ns Datasheet PDF File

For 11ns Found Datasheets File :: 181    Search Time::1.953ms    
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Part No. K8F5715ETM-SC1C0 K8F5715ETM-DE1F0 K8F5715ETM-FC1E0 K8F5715ETM-SC1E0 K8F5615ETM-FC1D0 K8F5615ETM-DE1D0 K8F5615ETM-DE1C0 K8F5615ETM-FC1C0 K8F5615ETM-FC1F0
OCR Text ... 2ns (@133mhz) toer : 20ns ==> 11ns (@66mhz), 9ns (@83mhz), 6ns (@133mhz) active write current 15ma (typ.), 30ma (max.) ==> 25ma (typ.), 40ma (max.) correct typo add speed characteristic for 108mhz sync burst read add ordering information...
Description 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA88

File Size 1,059.43K  /  59 Page

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Part No. K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8S6415EBB-FC7C
OCR Text ...66mhz, the k8s6415e provides an 11ns burst access time and 70ns initial access time. the device performs a program opera- tion in units of single 16 bits (word) and an erase operation in units of a block. single or multiple blocks can be e...
Description 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory

File Size 681.03K  /  39 Page

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    Samsung Electronics
Part No. KFG1G16Q2A-DEBX KFH2G16Q2A-DEBX
OCR Text ...ed errata 2. revised trdyo from 11ns to 9ns. 3. revised taavdh from 7ns to 6ns. 4. revised tesp value to typ 400us / max 500us. 5. revised dbs description. 6. revised synchronous burst block read diagram. 1. corrected errata 2. added int2 p...
Description FLASH MEMORY

File Size 2,203.75K  /  149 Page

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    K8S6415EBB

Samsung semiconductor
Part No. K8S6415EBB
OCR Text ...66mhz, the k8s6415e provides an 11ns burst access time and 70ns initial access time. the device performs a program opera- tion in units of single 16 bits (word) and an erase operation in units of a block. single or multiple blocks can be e...
Description (K8S6415ExB) 64M Bit Multi Bank NOR Flash Memory

File Size 743.97K  /  39 Page

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    Samsung Electronics
Part No. K8F5615EBM
OCR Text ... 2ns (@133mhz) toer : 20ns ==> 11ns (@66mhz), 9ns (@83mhz), 6ns (@133mhz) active write current 15ma (typ.), 30ma (max.) ==> 25ma (typ.), 40ma (max.) correct typo add speed characteristic for 108mhz sync burst read add ordering information...
Description 256Mb M-die MLC NOR Specification

File Size 1,124.45K  /  59 Page

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Part No. K8A3215EBE-FC7B
OCR Text ...66mhz, the k8a3215e provides an 11ns burst access time and 70ns initial access time. the device performs a program opera- tion in units of single 16 bits (word) and an erase operation in units of a block. single or multiple blocks can be e...
Description 2M X 16 FLASH 1.8V PROM, 90 ns, PBGA

File Size 601.21K  /  38 Page

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    INTERSIL[Intersil Corporation]
Part No. ISL43L220IRZ-T ISL43L220 ISL43L220IR ISL43L220IR-T ISL43L220IRZ
OCR Text ...nd fast switching speeds (tON = 11ns, tOFF = 5ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins...
Description Ultra Low ON-Resistance, Low Voltage,Single Supply, Dual SPDT Analog Switch

File Size 337.42K  /  13 Page

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    Intersil
Part No. ISL43L220
OCR Text ...nd fast switching speeds (tON = 11ns, tOFF = 5ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins...
Description Ultra Low ON-Resistance, Low Voltage, 1.1V to 4.5V, Dual SPDT Analog Switch
From old datasheet system

File Size 333.17K  /  13 Page

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    SAMSUNG[Samsung semiconductor]
Part No. K8S6415ETB-FC7C K8S6415ETB-DC7C K8S6415ETB K8S6415ETB-DE7C K8S6415ETB-FE7C K8S6415EBB-FC7C K8S6415EBB-FE7C K8S6415EBB-DC7C K8S6415EBB-DE7C
OCR Text ... Access Time : 14.5ns (54MHz) / 11ns (66MHz) * Burst Length : - Continuous Linear Burst - Linear Burst : 8-word & 16-word with No-wrap & Wrap * Block Architecture - Eight 4Kword blocks and one hundreds twenty seven 32Kword blocks - Bank 0 c...
Description 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory

File Size 673.37K  /  39 Page

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    Galvantech
Part No. GVT7164B36 7164B36S
OCR Text ...t access times: 8, 8.5, 10, and 11ns Fast clock speed: 100, 90, and 67 MHz Provide high performance 2-1-1-1 access rate Fast OE# access times: 3.5, 4.0, 4.5, and 5.0ns 3.3V -5% and +10% power supply Separate isolated output buffer supply co...
Description 64K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system

File Size 145.33K  /  13 Page

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For 11ns Found Datasheets File :: 181    Search Time::1.953ms    
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