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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	0.45 and 0.68 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...5mH, RG = 25, peak IAS = 8.1A. See Figures 15, 16. 5-3 IRF234, IRF235, IRF236, IRF237 Typical ...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , T...
Description	N.CHANNEL POWER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	0.28 and 0.34 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. T...5mH, RG = 25, peak IAS = 14A. See Figures 15, 16. 5-3 IRF244, IRF245, IRF246, IRF247 Typical P...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF250SMD
OCR Text	0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 6 ...5mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 190A/ms , VDD BVDSS , TJ ...
Description	N.CHANNEL POWER MOSFET
File Size	23.37K / 2 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9620 FN2283
OCR Text	...620 -200 -200 -3.5 -2 -14 20 40 0.32 290 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note...5mH, RG = 25, peak IAS = 3.5A (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION...
Description	3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
File Size	57.96K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB7N60 FQI7N60 FQI7N60TU FQB7N60TM
OCR Text	...* * * * 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche teste...5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.4A, di/dt 200A/s, VDD BVDSS, Sta...
Description	600V N-Channel MOSFET 600V N-Channel QFET
File Size	589.78K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQP7N60
OCR Text	...* * * * 7.4A, 600V, RDS(on) = 1.0 @VGS = 10 V Low gate charge ( typical 29 nC) Low Crss ( typical 16 pF) Fast switching 100% avalanche teste...5mH, IAS = 7.4A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 7.4A, di/dt 200A/s, VDD BVDSS, Sta...
Description	600V N-Channel MOSFET
File Size	579.36K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFS630A
OCR Text	...ax.) @ VDS = 200V Low RDS(ON) : 0.333 (Typ.) 1 IRFS630A BVDSS = 200 V RDS(on) = 0.4 ID = 6.5 A TO-220F 2 3 1.Gate 2. Drain ...5mH, I AS=6.5A, VDD=50V, RG=27, Starting T J =25ooC 3 _ _ _ O ISD < 9A, di/dt <220A/ s, V DD < BVDSS...
Description	Advanced Power MOSFET
File Size	259.74K / 7 Page	View it Online	Download Datasheet

				SIPEX[Sipex Corporation]
Part No.	SP4422 SP4422A SP4422ACN SP4422ACU SP4422ACX SP4422ANEB SP4422AUEB SP4422NEB SP4422UEB
OCR Text	..................................-0.5V to (VDD+0.5V) COIL (pin3)..............................................................60mA Lamp Output...5mH (RS = 18); COSC = 100pF unless otherwise noted) PARAMETER Supply Voltage, VDD Supply Current,...
Description	Electroluminescent Lamp Driver IC,BALLAST/BACKLIGHT CONTROLLER/DRIVER,BIPOLAR/MOS,SOP,8PIN,PLASTIC
File Size	136.95K / 13 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSH7N60 SSH7N60B
OCR Text	...tance, Junction-to-Ambient Typ -0.24 -Max 0.78 -40 Units C/W C/W C/W (c)2001 Fairchild Semiconductor Corporation Rev. B, November 2001...5mH, IAS = 7.3A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD " 7.0A, di/dt " 300A/s, VDD " BVDSS, ...
Description	600V N-Channel MOSFET
File Size	648.38K / 8 Page	View it Online	Download Datasheet

For 0.5mh Found Datasheets File :: 850 Search Time::2.454ms
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