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FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
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| Part No. |
7MBR75GE060
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| OCR Text |
...60
Characteristics Typ. Max. 1.0 0.2 5.5 8.5 2.8 3.1 3.0 3.3 6000 1.2 0.6 1.0 0.35 0.3 1.0 0.1 2.8 0.8 0.6 1.0 0.35 1 0.6 1.55 1.0 Unit mA A V V V V V pF s s s s s mA A V s s s s mA s V mA
Brake (IGBT)
Converter
Reverse recovery tim... |
| Description |
IGBT(600V/75A/PIM)
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| File Size |
642.38K /
9 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
CPV362M4K
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| OCR Text |
...r high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Fully isolated printed circuit board mount packag...51Ohm VGE = 15V VCC = 480V
IC =
6A
IC =
3A
0.6
IC = 1.5 A
0.1
0.4
0.2
0.... |
| Description |
600V UltraFast 8-25 kHz 3-Phase Bridge IGBT in a IMS-2 package
Short Circuit Rated UltraFast IGBT
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| File Size |
312.21K /
10 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45B3436B
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| OCR Text |
...S CONDITIONS
VDS = 12 (V) ID = 0.8 (A) RG=12 (ohm)
GF-60
(Ta=25deg.C) Ratings -15 -10 10 78 175 -65 / +175 Unit V V A W deg.C deg.C
< ...51ohm Board material :Teflon, t=0.8mm, Specific dielectric constant=2.6 UNIT:(mm)
MITSUBISHI ELEC... |
| Description |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
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| File Size |
412.57K /
6 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS48V2527_04 MGFS48V2527 MGFS48V252704
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| OCR Text |
...CONDITIONS
VDS = 12 (V) ID = 4.0 (A) RG=20 (ohm) for each gate
2.5-2.7GHz band power amplifier
r
APPLICATION
WPKVOO
...51ohm
MITSUBISHI ELECTRIC CORPORATION
June-'04
(4/6)
MGFS48V2527
TEST CONDITIONS : f=2.0-... |
| Description |
2.5 - 2.7GHz BAND 60W GaAs FET
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| File Size |
441.01K /
6 Page |
View
it Online |
Download Datasheet |
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For
0.51ohm Found Datasheets File :: 26 Search Time::1.422ms
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