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  0.4l Datasheet PDF File

For 0.4l Found Datasheets File :: 1552    Search Time::1.219ms    
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    CENTRAL[Central Semiconductor Corp]
Part No. CMUSH2-4L
OCR Text ...A max. * BVR = 40 V min. * VF = 0.5V max @ 200mA * IFSM = 1.0A MARKING CODE: U24 SOT-523 CASE MAXIMUM RATINGS: (TA=25C) Peak Repetitiv...4L SURFACE MOUNT ULTRAminiTM HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. S...
Description SMD Schottky Diode Single: Low VF
SURFACE MOUNT ULTRAmini HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

File Size 120.84K  /  2 Page

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    CMUSHW2-4L CMUSHW2-4L-15

Central Semiconductor Corp
Central Semiconductor C...
Part No. CMUSHW2-4L CMUSHW2-4L-15
OCR Text ...urge current, tp=10ms i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c...4l surface mount high current, low v f silicon schottky diode sot-523w case - mechanical outline l...
Description SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE

File Size 601.01K  /  2 Page

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    CMOSH2-4L

Central Semiconductor, Corp.
Central Semiconductor Corp.
Part No. CMOSH2-4L
OCR Text ...is device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required. MARKING CODE: 4L SOD-523 CASE MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Cont...
Description SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE
SMD Schottky Diode Single: Low VF

File Size 106.08K  /  2 Page

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    CMDSH2-4L

Central Semiconductor Corp
Part No. CMDSH2-4L
OCR Text ... C C/W VRRM IF IFSM PD 40 200 1.0 250 UNITS V mA A mW ELECTRICAL CHARACTERISTICS: SYMBOL IR BVR VF VF VF CT trr TEST CONDITIONS VR=20V IR...4L SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE Semiconductor Corp. SOD-323 CASE ...
Description SMD Schottky Diode Single: Low VF
SURFACE MOUNT HIGH CURRENT, LOW V-F SILICON SCHOTTKY DIODE

File Size 109.45K  /  2 Page

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    VICOR[Vicor Corporation]
Part No. QPI-4L
OCR Text ...e QPI-4 supports the PICMG(R) 3.0 specification for filtering system boards to the EN55022 Class B limits. In comparison to passive solution...4L Data Sheet Rev. 3.0 Page 1 of 8 Absolute Maximum Ratings - Exceeding these parameters may resu...
Description 7 Amp Active EMI Filter for 48 V DC Bus

File Size 139.62K  /  8 Page

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    Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TIM1011-4L
OCR Text ...36.5 7.5 1.7 24 -45 1.7 2.2 0.8 2.2 70 CONDITIONS VDS= 9V f= 10.7 to 11.7GHz add IM3 IDS2 Tch Two-Tone Test Po=25.0 dBm (Si...4L ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Curre...
Description MICROWAVE POWER GaAs FET

File Size 145.86K  /  4 Page

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    CFSH2-4L

Central Semiconductor Corp
Part No. CFSH2-4L
OCR Text ... * Low Forward Voltage Drop (VF=0.53V TYP @ 200mA) * Low Reverse Current (350nA TYP @ 40V) * Small TLPTM, 1mm x 0.6mm x 0.4mm, ultra low pro...4L SURFACE MOUNT SILICON SCHOTTKY DIODE SOD-882L CASE - MECHANICAL OUTLINE LEAD CODE: 1) Catho...
Description SURFACE MOUNT SILICON SCHOTTKY DIODE

File Size 351.48K  /  2 Page

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    Central Semiconductor
Part No. CMOSH2-4L
OCR Text ...is device offers a VF as low as 0.33 volts and is designed for small signal general purpose applications where size and low loss is required. MARKING CODE: 4L SOD-523 CASE MAXIMUM RATINGS: (TA=25C) Peak Repetitive Reverse Voltage Cont...
Description SURFACE MOUNT HIGH CURRENT LOW VF SILICON SCHOTTKY DIODE

File Size 356.46K  /  2 Page

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    CMPSH1-4L

Central Semiconductor Corp
Part No. CMPSH1-4L
OCR Text 0 a non repetitive forward current (tp = 8.3ms) i fsm 20 a power dissipation p d 350 mw operating and storage junction temperature t j , t s...4l is a high current, ultra low v f , schottky barrier rectifier in a surface mount sot-23f package....
Description SURFACE MOUNT SILICON HIGH CURRENT ULTRA LOW VF SCHOTTKY BARRIER RECTIFIER

File Size 203.06K  /  2 Page

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    Central Semiconductor Corp.
Central Semiconductor, Corp.
Part No. CMDSH2-4L
OCR Text ...surge current, tp=1.0ms i fsm 1.0 a power dissipation p d 250 mw operating and storage junction temperature t j , t stg -65 to +150 c therma...4l surface mount high current, low v f silicon schottky diode ...
Description SURFACE MOUNT HIGH CURRENT, LOW V-F SILICON SCHOTTKY DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE

File Size 109.17K  /  2 Page

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