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GeneSiC Semiconductor, Inc.
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Part No. |
GB05SLT12-252
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OCR Text |
... f = 5 a, t j = 175 c 2.6 3.0 reverse current i r v r = 1200 v, t j = 25 c 5 50 a v r = 1200 v, t j = 175 c 10 100 total c...252 ? aug 2014 http://www.genesicsemi.com/index ... |
Description |
Silicon Carbide Power Schottky Diode
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File Size |
353.92K /
5 Page |
View
it Online |
Download Datasheet
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GeneSiC Semiconductor, Inc.
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Part No. |
GB01SLT12-252
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OCR Text |
... dt t c = 25 c, t p = 10 ms 0.5 a 2 s t c = 160 c, t p = 10 ms 0.3 power dissipation p tot t c = 25 c 42 w operating and s...252 ? aug 2014 http://www.genesicsemi.com/index ... |
Description |
Silicon Carbide Power Schottky Diode
|
File Size |
349.98K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
 |
GeneSiC Semiconductor, Inc.
|
Part No. |
GB10SLT12-252
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OCR Text |
...f = 10 a, t j = 175 c 2.6 3.0 reverse current i r v r = 1200 v, t j = 25 c 50 250 a v r = 1200 v, t j = 175 c 100 500 tota...252 ? aug 2014 http://www.genesicsemi.com/index ... |
Description |
Silicon Carbide Power Schottky Diode
|
File Size |
352.52K /
5 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
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