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  0.141a Datasheet PDF File

For 0.141a Found Datasheets File :: 66    Search Time::1.64ms    
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    PH965C6

FUJI[Fuji Electric]
Part No. PH965C6
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1444 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...141A test code A 22 D-402 22 3min ON, 3min OFF Test duration : 10000cy Temperature : Ta...
Description SPECIFICATION

File Size 273.97K  /  12 Page

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    PH967C6

ETC[ETC]
Fuji Electric
Part No. PH967C6
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1445 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...141A test code A 22 D-402 22 3min ON, 3min OFF Test duration : 10000cy Temperature : Ta...
Description SPECIFICATION

File Size 133.51K  /  12 Page

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    Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF6P3300H MRF6P3300HR5 MRF6P3300HR3
OCR Text 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and indust...141A - TP CRCW1206100J CRCW1206102J Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Con ATC Mi...
Description RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET)

File Size 871.41K  /  24 Page

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    2SK3523-01R

FUJI[Fuji Electric]
Part No. 2SK3523-01R
OCR Text ... typ. max. Unit 500 3.0 - - 5.0 25 V V A 250 - 10 100 nA - 0.20 0.26 Fuji Electric Co.,Ltd...141A test code A 22 Test for FET 1 Intermittent Operating Life 2 HTRB (Gate-source) 3 HTRB ...
Description    POWER MOSFET

File Size 354.00K  /  19 Page

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    NTE[NTE Electronics]
Part No. NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NTE5868 NTE5867 NTE5860 NTE5857 NTE5858 NTE5851 NTE5852 NTE5853 NTE5854 NTE5855 NTE5856 NTE5859
OCR Text ...4 141 159 167 127 116 1270 1.10 0.60 17.2 Unit A A A A A A A2s A2s A2pt V V m t = 0.1 to 10ms, No voltage reapplied, Note 1 IFM = 19A, TJ = +25C TJ = +175C TJ = +175C Note 1. I2t for time tx = I2 t S tx Thermal-Mechanical Specif...
Description Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.

File Size 23.18K  /  2 Page

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    NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE6232
OCR Text ...n), RthJC . . . . . . . . . . . 0.22C/W Thermal Resistance, Case-to-Sink (Note 1), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Note 1. Mounting surface flat, smooth and greased. Electrical Specifications: ...
Description Powerblock Module

File Size 26.85K  /  2 Page

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    http://
FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. YG963S6R
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1437 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...141A test code A 22 D-402 22 3min ON, 3min OFF Test duration : 10000cy Temperature : Ta...
Description SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY

File Size 135.93K  /  12 Page

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    MRFE6P3300HR3 MRFE6P3300HR5

Freescale Semiconductor, Inc
Part No. MRFE6P3300HR3 MRFE6P3300HR5
OCR Text 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and indust...141A - TP CRCW120610R0FKTA CRCW12061001FKTA Kemet Kemet ATC ATC ATC ATC ATC Nippon United Chemi - Co...
Description RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

File Size 417.99K  /  12 Page

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    YA846C04B

Fuji Electric
Part No. YA846C04B
OCR Text ...olding resin Epoxy resin UL : V-0 (4)Characteristics is shown MS5D1917 10/1212/12 3. RATINGS 3.1 MAXIMUM RATINGS (at Tc=25 unless otherwise ...141A test code A 22 8 Steady state Operating life 9 Intermittent Operating life 10 High Temp. ...
Description    Schottky Barrier Diode

File Size 195.64K  /  12 Page

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    YG962S6R

FUJI ELECTRIC HOLDINGS CO., LTD.
Part No. YG962S6R
OCR Text ... Molding resin Epoxy resin UL:V-0 (4) Characteristics is shown MS5D1436 10/12~12/12 4. RATINGS 4.1 MAXIMUM RATINGS ITEM Repetitive peak reve...141A test code A 22 D-402 22 3min ON, 3min OFF Test duration : 10000cy Temperature : Ta...
Description    SILICON DIODE
IC, FLASH, X8, 64MBIT, 8MB, 3V, TSOP

File Size 136.40K  /  12 Page

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