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  1m-word Datasheet PDF File

For 1m-word Found Datasheets File :: 2143    Search Time::1.563ms    
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    NEC Corp.
NEC, Corp.
Part No. UPD23C16340GZ-MJH UPD23C16380GZ-MJH UPD23C16340F9-BC3 UPD23C16380F9-BC3 UPD23C16340GZ-XXX-MJH UPD23C16380GZ-XXX-MJH UPD23C16340F9-XXX-BC3 UPD23C16380F9-XXX-BC3 NECCORP.-UPD23C16380F9-XXX-BC3
OCR Text ... 2m-word by 8-bit (byte mode) / 1m-word by 16-bit (word mode) page access mode document no. m15709ej2v0ds00 (2nd edition) date published february 2003 ns cp(k) printed in japan data sheet the mark shows major revised points. 2001 d...
Description CAP 0.01UF 100V 5% X7R SMD-0805 TR-7 PLATED-NI/SN
CAP 10PF 16V 1% THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
RF/Coaxial Connector; RF Coax Type:SMA; Contact Termination:Crimp; Body Style:Right Angle Plug; RG Cable Type:141, 223 RoHS Compliant: Yes 1,600位掩膜可编程ROM00万字位(字节模式 100万字6位(字模式)页面访问模式
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1m-word BY 16-BIT (WORD MODE) PAGE ACCESS MODE 1,600位掩膜可编程ROM00万字位(字节模式 100万字6位(字模式)页面访问模式

File Size 255.70K  /  20 Page

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    A42L0616S-45 A42L0616S-50

AMIC Technology
Part No. A42L0616S-45 A42L0616S-50
OCR Text 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Revision History Rev. No. 0.0 0.1 0.2 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE Histor...word by 16-bit configuration. This product can execute Byte Write and Byte Read operation via two CA...
Description 1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE

File Size 274.26K  /  26 Page

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    M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M5M4V16169DTP-15 M5M4V16169DTP M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V1

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M4V16169DTP-10 M5M4V16169DTP-7 M5M4V16169DTP-8 M5M4V16169DTP-15 M5M4V16169DTP M5M4V16169DRT-10 M5M4V16169DRT-15 M5M4V16169DRT-7 M5M4V16169DRT-8
OCR Text 1m-word BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM Preliminary This document is a preliminary Target Spec. and some of the contents are subject to change without notice. PINCONFIGURATION (TOP VIEW) Vcc DQCl DQCu CC1# CC0#...
Description 16MCDRAM:16M(1m-word BY 16-BIT) CACHED DRAM WITH 16K (1024-WORD BY 16-BIT) SRAM

File Size 726.41K  /  64 Page

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    Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
Part No. MX28F160C3TXAC-11G MX28F160C3BXAC-11 MX28F160C3BXAC-11G MX28F160C3TTI-11 MX28F160C3BTI-11 MX28F160C3BTI-11G MX28F160C3TTI-11G MX28F160C3TXAI-90 MX28F160C3TXAC-90G MX28F160C3TXAI-90G MX28F160C3BXAI-70G MX28F160C3BXAC-70G MX28F160C3BXAI-90G MX28F160C3BXAC-90G MX28F160C3BTC-90G MX28F160C3BTI-90G MX28F160C3BTI-70G MX28F160C3BTC-70 MX28F160C3TTC-70 MX28F160C3BXAI-11G MX28F160C3TTC-90 MX28F160C3TTI-90 MX28F160C3TXAI-70G
OCR Text 1m x16] cmos single voltage 3v only flash memory - word write suspend to read - sector erase suspend to word write - sector erase suspend to read register report ? automatic sector erase, word write and sector lock/ unlock configuration  s...
Description 16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [1M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 110 ns, PBGA48

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    SILICON STORAGE TECHNOLOGY INC
Part No. SST32HF3241C-70-4C-LFS SST32HF1641-70-4E-LS
OCR Text ...s organized as: ? sst32hf1621c: 1m x16 flash + 128k x16 sram ? sst32hf1641x: 1m x16 flash + 256k x16 sram ? sst32hf1681: 1m x16 flash + 256k...word-program: ? sector-erase time: 18 ms (typical) ? block-erase time: 18 ms (typical) ? chip-erase ...
Description SPECIALTY MEMORY CIRCUIT, PBGA63
SPECIALTY MEMORY CIRCUIT, PBGA62

File Size 433.93K  /  36 Page

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    CYRS1543AV18

Cypress Semiconductor
Part No. CYRS1543AV18
OCR Text ...ic block diagram ? cyrs1543av18 1m x 18 array clk a (19:0) gen. k k control logic address register d [17:0] read add. decode read data reg. ...word of data is driven onto the q [17:0] using k as the output timing reference. on the subsequent ...
Description 72-Mbit QDR? II SRAM Four-Word Burst

File Size 482.13K  /  32 Page

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    Analog Integrations, Corp.
Part No. CY7C1423AV18-250BZC
OCR Text ... density (4m 8, 4m 9, 2m 18, 1m 36) 300 mhz clock for high bandwidth 2-word burst for reducing address bus frequency double data rate (ddr) interfaces (data transferred at 600 mhz) at 300 mhz two input clocks (k and k ) for preci...
Description 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165

File Size 946.37K  /  33 Page

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    HN58W241000I05

Renesas Electronics Corporation
Part No. HN58W241000I05
OCR Text 1M EEPROM (128-kword x 8-bit) REJ03C0138-0300 Rev.3.00 Jul.12.2005 Description HN58W241000I is the two-wire serial interface EEPROM (El...word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgmen...
Description Two-wire serial interface 1M EEPROM (128-kword 】 8-bit)

File Size 120.15K  /  20 Page

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    LH53B16R00

Sharp Corporation
Sharp Electrionic Components
Part No. LH53B16R00
OCR Text ...rocess technology. CMOS 16M (1M x 16/512K x 32) MROM PIN CONNECTIONS 70-PIN SSOP A0 A1 A2 A3 A4 A5 VCC D0 D16 D1 D17 GND VCC D2 D18 D3 ...word mode, and data output (D31) when set to be HIGH in double word mode. 53B16R00-1 Figure 1. P...
Description CMOS 16M (1M x 16/512K x 32) MROM

File Size 56.60K  /  6 Page

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    CY7C14141KV18 CY7C14141KV18-300BZXC

Cypress Semiconductor
Part No. CY7C14141KV18 CY7C14141KV18-300BZXC
OCR Text ...1kv18 ? 2m x 18 cy7c14141kv18 ? 1m x 36 functional description the cy7c14101kv18, cy7c14251kv18, cy7c14121kv18, and cy7c14141kv18 are 1.8v s...word of data is driven onto the q [17:0] using c as the output timing reference. on the subsequent...
Description 36-Mbit QDR? II SRAM 2-Word Burst Architecture

File Size 595.68K  /  31 Page

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