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1e5 Datasheet PDF File

For 1e5 Found Datasheets File :: 281 Search Time::0.922ms
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				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 FSPYE230 FSPYE230F3 FSPYE230R FSPYE230R3
OCR Text	...ven National Labs. 5. Fluence = 1e5 ions/cm2 (Typ), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). ENVIRONMENT (NOTE 5) TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE () 36 36 32 32 28...
Description	From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	82.63K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F FSPYE234F3 FSPYE234R FSPYE234R3
OCR Text	...ven National Labs. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 37 37 60 60 82 82 TYPICAL RANGE () 36 36 32 32 28 28 APPLIED VGS B...
Description	From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
File Size	78.32K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	JANSR2N7395
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description	8A/ 100V/ 0.230 Ohm/ Rad Hard/ N-Channel Power MOSFET 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	44.58K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	JANSR2N7396
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	5A/ 200V/ 0.460 Ohm/ Rad Hard/ N-Channel Power MOSFET 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	44.35K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	JANSR2N7397
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 37 TYPICAL RANGE () 43 36 36 36 36 APPLIED VGS BIAS (V...
Description	4A/ 250V/ 0.610 Ohm/ Rad Hard/ N-Channel Power MOSFET 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	44.35K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	JANSR2N7398
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 26 37 37 37 TYPICAL RANGE () 43 43 36 36 36 APPLIED VGS BIAS (V...
Description	2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFET
File Size	44.42K / 8 Page	View it Online	Download Datasheet

				Intersil, Corp. Intersil Corporation
Part No.	JANSR2N7399
OCR Text	...(NSWC), Crane, IN. 5. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description	11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET 11 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA 11A/ 100V/ 0.210 Ohm/ Rad Hard/ N-Channel Power MOSFET
File Size	43.53K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FSGL134R
OCR Text	...labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr; let = 60, i or xe; let = 82, au 7. does not exhibit single event burnout (seb) or single event gate rupture (segr). performance curves...
Description	Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
File Size	140.94K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FSGL130R
OCR Text	...labs or texas a&m. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. ion species: let = 37, br or kr; let = 60, i or xe; let = 82, au 7. does not exhibit single event burnout (seb) or single event gate rupture (segr). performance curves...
Description	Radiation Hardened / SEGR Resistant N-Channel Power MOSFET
File Size	140.19K / 9 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	FSF150D FSF150R
OCR Text	...(NSWC), Crane, IN. 6. Fluence = 1e5 ions/cm2 (typical), T = 25oC. 7. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). TYPICAL LET (MeV/mg/cm) 26 37 37 37 TYPICAL RANGE () 43 36 36 36 APPLIED VGS BIAS (V) -20 ...
Description	25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 25A/ 100V/ 0.070 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
File Size	44.64K / 8 Page	View it Online	Download Datasheet

For 1e5 Found Datasheets File :: 281 Search Time::0.922ms
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