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Ecliptek, Corp.
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| Part No. |
EDI2GG46464V12D
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| OCR Text |
...edc.com edi2gg46464v 9.5ns 10ns 11ns 12ns 15ns description symbol min max min max min max min max min max units clock cycle time t khkh * * 12 12 15 20 ns clock high time t khkl **5556ns clock low time t klkh **5556ns address setup t avkh ... |
| Description |
4x64Kx64, 3.3V Synchronous Flow-Through SRAM Card Module(4x64Kx64, 3.3V2ns,同步静态RAM卡模流通结构）) 4x64Kx64.3V的同步流通过的SRAM卡模块（4x64Kx64.3伏，12ns，同步静态内存卡模块（流通结构）
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| File Size |
245.01K /
8 Page |
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it Online |
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TE Connectivity, Ltd.
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| Part No. |
EDI2GG432128V12D
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| OCR Text |
...ming parameters *tbd 9.5ns 10ns 11ns 12ns 15ns description sym min max min max min max min max min max units clock cycle time t khkh * * 12 12 15 20 ns clock high time t khkl **5 5 5 6 ns clock low time t klkh **5 5 5 6 ns clock to output... |
| Description |
4x128Kx32 Synchronous Flow-Through SRAM Card Module(4x128Kx18, 3.3V2ns,同步静态RAM卡模流通结构）) 4x128Kx32同步流通过的SRAM卡模块（4x128Kx18.3伏，12ns，同步静态内存卡模块（流通结构）
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| File Size |
171.15K /
8 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L256V18F1 MT55L256L18F1
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| OCR Text |
...ation fast cycle times: 10ns, 11ns, and 12ns single +3.3v 5% power supply (v dd ) separate +3.3v or +2.5v isolated output buffer supply (v dd q) advanced control logic for minimum control signal interface individual byte write con... |
| Description |
2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18，流量通过ZBT SRAM的电压（3.3V输入/输出Mb的流通式同步静态存储器
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| File Size |
443.11K /
25 Page |
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it Online |
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Austin Semiconductor, Inc
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| Part No. |
AS5SS128K36DQ-12/XT AS5SS128K36DQ-12/IT AS5SS128K36DQ-11/IT
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| OCR Text |
...utilization ? fast cycle times: 11ns & 12ns ? single +3.3v +5% power supply (v dd ) ? advanced control logic for minimum control signal interface ? individual byte write controls may be tied low ? single r/w\ (read/write) control pin ? cke... |
| Description |
128K x 36 SSRAM SYNCHRONOUS ZBL SRAM FLOW-THRU OUTPUT 128K X 36 ZBT SRAM, 8.5 ns, PQFP100
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| File Size |
146.72K /
16 Page |
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it Online |
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ST Microelectronics
意法半导
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| Part No. |
TSA1005I-40IF TSA1005-20IFT
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| OCR Text |
...b to digital output valid data 11ns toff rising edge of oeb to digital output tri-state 11ns n-1 n n+1 n+6 n+7 n+2 n+5 n+3 n+4 n+8 clk tpd i + tod n+9 n+10 n+11 n+12 n+13 data output sample n+1 i channel sample n q channel sample n+1 q ch... |
| Description |
DUAL-CHANNEL, 10-BIT, 20/40MSPS A/D CONVERTER
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| File Size |
443.77K /
22 Page |
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it Online |
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Micron Technology, Inc.
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| Part No. |
MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F
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| OCR Text |
...ation fast cycle times: 10ns, 11ns and 12ns single +3.3v 5%, or 2.5v 5% power supply (v dd ) separate +3.3v or +2.5v isolated output buffer supply (v dd q) advanced control logic for minimum control signal interface individual byt... |
| Description |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
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| File Size |
513.55K /
32 Page |
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it Online |
Download Datasheet |
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