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  irf630 Datasheet PDF File

For irf630 Found Datasheets File :: 22    Search Time::2.516ms    
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    IRF630

TRANSYS Electronics Limited
Part No. irf630
OCR Text irf630 Power MOSFET VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A Drain D G S Gate Drain Source N Channel Tj = 25 C Maximum. Unless stated Otherwise Symbol Symbol ELECTRICAL CHARACTERISICS at Parameter Drain to Source Break...
Description Power MOSFET

File Size 138.31K  /  1 Page

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    Nell Semiconductor Co.,...
Part No. irf630
OCR Text s e m i c o n d u c t o r r o h s r o h s n -c h a n n e l p o w e r m o s f e t nell high power products i r f 6 3 0 s e r i e s (9 a , 2 0 0 v o lt s ) t h e n e l l i r f 6 3 0 a r e n - c h a n n e l e n...
Description N-Channel Power MOSFET

File Size 600.30K  /  7 Page

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    IRF630

IRF[International Rectifier]
Part No. irf630
OCR Text
Description    Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V Rds(on)=0.40ohm Id=9.0A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)

File Size 175.50K  /  6 Page

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    IRF63006 IRF630FP

STMicroelectronics
Part No. irf63006 irf630FP
OCR Text irf630 irf630FP N-channel 200V - 0.35 - 9A TO-220/TO-220FP Mesh overlayTM II Power MOSFET General features Type irf630 irf630FP VDSS 200V 200V RDS(on) <0.40 <0.40 ID 9A 9A 3 1 2 1 2 3 Extremely high dv/dt capability Ver...
Description N-channel 200V - 0.35楼? - 9A TO-220/TO-220FP Mesh overlay垄芒 II Power MOSFET
N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET

File Size 309.32K  /  14 Page

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    New Jersey Semi-Conduct...
Part No. D84DN2 D84DM2
OCR Text irf630,631 d84dn2,m2 9.0 amperes 200,150 volts "ds(on) = 0.4 n telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 [rut field effect power transistor features ? polysilicon gate ? improved stability and reliability ? no secondary br...
Description FIELD EFFECT POWER TRANSISTOR

File Size 850.42K  /  2 Page

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    IRF630PBF SIHF630 SIHF630-E3 IRF630

Vishay Siliconix
Part No. irf630PBF SIHF630 SIHF630-E3 irf630
OCR Text irf630, SiHF630 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 43 7.0 23 Single D FEATURES 200 0.40 * Dynamic dV/dt Rating * Repetitive Avalanche Rate...
Description Power MOSFET

File Size 577.07K  /  8 Page

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    Kersemi Electronic Co., Ltd.
Kersemi Electronic Co.,...
Part No. SIHF630-E3 irf630
OCR Text irf630, sihf630 features ? dynamic dv/dt rating ? repetitive avalanche rated ?fast switching ? ease of paralleling ? simple drive requirements ? compliant to rohs directive 2002/95/ec description third generation power mosfets from visha...
Description Power MOSFET Dynamic dV/dt Rating Repetitive Avalanche Rated

File Size 5,953.91K  /  8 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. IRF230 MTP12N20 MTP12N18 IRF231 irf630 IRF232 IRF633
OCR Text ... fax: (973) 376-8960 irf230-233/irf630-633 mtp12n18/12n20 n-channel power mosfets, 12 a, 150-200 v power and discrete division description these devices are n-channel, enhancement mode, power mosfets designed especially for high power, high...
Description N-Channel Power MOSFETs, 12 A, 150-200 V
   N-Channel Power MOSFETs, 12 A, 150-200 V

File Size 102.54K  /  3 Page

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    IRF630S IRF630

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. irf630S irf630
OCR Text irf630, irf630S FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 200 V ID = 9 A g RDS(ON) 400 m s GENERAL DESCRIPTION N-channel, enh...
Description N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体

File Size 94.60K  /  9 Page

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