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  2-11d1b Datasheet PDF File

For 2-11d1b Found Datasheets File :: 33    Search Time::3.031ms    
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    TIM5359-4UL

Toshiba Semiconductor
Part No. TIM5359-4UL
OCR Text ...MIN. -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VG...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solderin...
Description MICROWAVE POWER GaAs FET

File Size 195.56K  /  4 Page

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    TIM6472-4SL

Toshiba Semiconductor
Part No. TIM6472-4SL
OCR Text ...V C/W MIN. -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= ...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 147.10K  /  4 Page

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    TIM6472-4UL

Toshiba Semiconductor
Part No. TIM6472-4UL
OCR Text .... -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 Rth(c-c) Channel to Case u The information contained herein is presented only ...11D1B) 0.60.15 4-C1.2 4.0 MIN. Unit in mm (1) (1) Gate (2) Source 12.90.2 3.20.3 (2)...
Description MICROWAVE POWER GaAs FET

File Size 43.97K  /  4 Page

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    TIM5053-8SL

Toshiba Semiconductor
Part No. TIM5053-8SL
OCR Text ....0 -42 TYP. MAX. 39.5 9.0 2.2 35 -45 2.2 2.6 0.6 2.6 80 CONDITIONS VDS=10V f= 5.0 to 5.3GHz add IM3 IDS2 Tch Two-Tone T...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 120.99K  /  4 Page

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    TIM5359-4SL

Toshiba Semiconductor
Part No. TIM5359-4SL
OCR Text ...V C/W MIN. -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= ...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 169.43K  /  4 Page

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    TIM3742-4SL-341

Toshiba Semiconductor
Part No. TIM3742-4SL-341
OCR Text ...V C/W MIN. -1.0 -5 TYP. 900 -2.5 2.6 4.5 MAX. -4.0 6.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= ...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 131.97K  /  4 Page

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    TIM3742-4UL

Toshiba Semiconductor
Part No. TIM3742-4UL
OCR Text ...MIN. -1.0 -5 TYP. MAX. 900 -2.5 2.6 4.5 -4.0 6.0 gm VGSoff IDSS VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VG...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solderin...
Description MICROWAVE POWER GaAs FET

File Size 168.29K  /  4 Page

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    TIM3742-8SL

Toshiba Semiconductor
Part No. TIM3742-8SL
OCR Text ...0 -42 TYP. MAX. 39.5 10.0 2.2 36 -45 2.2 2.6 0.6 2.6 80 CONDITIONS VDS= 10V f= 3.7 to 4.2GHz add IM3 IDS2 Tch Two-Tone ...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 123.75K  /  4 Page

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    TIM7785-6UL

Toshiba Semiconductor
Part No. TIM7785-6UL
OCR Text ...VGSO CONDITIONS VDS= 3V IDS= 2.0A VDS= 3V IDS= 20mA VDS= 3V VGS= 0V IGS= -70A UNIT mS V A V C/W MIN. -1.0 -5 TYP. MAX. 1240 ...11D1B) 0.60.15 4-C1.2 4.0 MIN. Unit in mm (1) (1) Gate (2) Source 12.90.2 3.20.3 (2)...
Description MICROWAVE POWER GaAs FET

File Size 43.59K  /  4 Page

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    TIM7785-8SL

Toshiba Semiconductor
Part No. TIM7785-8SL
OCR Text ....0 -42 TYP. MAX. 39.5 6.0 2.2 30 -45 2.2 2.6 0.6 2.6 80 CONDITIONS VDS= 10V f= 7.7 to 8.5GHz add IM3 IDS2 Tch Two-Tone ...11D1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Solde...
Description MICROWAVE POWER GaAs FET

File Size 242.70K  /  4 Page

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