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				Linear Technology, Corp.
Part No.	LT4363 LT4363-15
OCR Text	...sients. it regulates the output during an overvoltage event, such as load dump in vehicles, by controlling the gate of an external n-channel mosfet. the output is limited to a safe value allowing the loads to continue functioning. the l...
Description	High Voltage Surge Stopper with Current Limit
File Size	301.34K / 24 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMI...
Part No.	5082-2811T25 5082-2800T25 1N5711
OCR Text	...e derived using limited samples during initial product characterization and may not be representative of the overall distribution v f - forward voltage (v) figure 1. i-v curve showing typical temperature variation for 5082-2800 or 1n5711...
Description	SILICON, MIXER DIODE Pico Second Switching Speed
File Size	217.47K / 7 Page	View it Online	Download Datasheet

				SPANSION LLC
Part No.	AM29F016D-120DWD1
OCR Text	... executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the dat...
Description	2M X 8 FLASH 5V PROM, 120 ns, UUC38
File Size	165.97K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text	...s recommended to be kept at VIL during power-up and power-down and recovery time of minimum 1s is required before internal circuit gets ready for any command sequences as shown in Figure 15. ---> WP pin provides hardware protection and is r...
Description	32M x 8 Bit / 16M x 16 Bit NAND Flash Memory 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronics Inc SAMSUNG[Samsung semiconductor]
Part No.	K9F5608U0M- K9F5608U0M-YCB0 K9F5608U0M-YIB0
OCR Text	...r Vcc and should not be toggled during reading or programming. Draft Date April. 10th 1999 July. 23th 1999 Sep. 15th 1999 Remark Advanced Information Advanced Information Preliminary 0.3 Mar. 21th 2000 Preliminary 0.4 0....
Description	From old datasheet system EEPROM,NAND FLASH,33MX8,CMOS,TSSOP,48PIN,PLASTIC 32M x 8 Bit NAND Flash Memory
File Size	350.10K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YIB0
OCR Text	...r Vcc and should not be toggled during reading or programming. => Connect this input pin to GND or set to static low state unless the sequential read mode excluding spare area is used. 4. Updated operation for tRST timing - If reset command...
Description	32M x 8 Bit NAND Flash Memory
File Size	607.24K / 29 Page	View it Online	Download Datasheet


Part No.	MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text	...e respective ba nk. a10 sampled during a precharge command determines whether the prechar ge applies to one bank (a10 low, bank selected by ba[2:0]) or all banks (a10 high). the address inputs also provide the op-code during a load mode...
Description	64M X 4 DDR DRAM, 1.5 ns, PBGA78 32M X 8 DDR DRAM, 1.87 ns, PBGA78 32M X 8 DDR DRAM, 1.5 ns, PBGA78
File Size	455.80K / 14 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCL4202
OCR Text	... fig. 9.4.2 9.4.2 9.4.2 9.4.2 during testing during testing during testing during testing 2014-02-17 rev.3.0 tpcl4202 8 10. 10. 10. 10. characteristics curves (note) characteristics curves (note) characteristics curves (note) chara...
Description	Power MOSFET (N-ch dual)
File Size	392.58K / 12 Page	View it Online	Download Datasheet

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