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  11ns Datasheet PDF File

For 11ns Found Datasheets File :: 181    Search Time::0.969ms    
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    Micron Technology, Inc.
Part No. MT55L256V18F1 MT55L256L18F1
OCR Text ...ation  fast cycle times: 10ns, 11ns, and 12ns  single +3.3v 5% power supply (v dd )  separate +3.3v or +2.5v isolated output buffer supply (v dd q)  advanced control logic for minimum control signal interface  individual byte write con...
Description 2.5V I/O56K x 18,Flow-Through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器)
3.3V I/O56K x 18,Flow-Through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器

File Size 443.11K  /  25 Page

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    GSI Technology, Inc.
Part No. GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H32AT-138I GS820H32AQ-138 GS820H32AT-4I GS820H32AGT-5I GS820H32AT-6I GS820H32AQ-6 GS820H32AQ-150I GS820H32AQ-5I
OCR Text ....7ns 120ma 15ns 10ns 120ma 15ns 11ns 120ma 15ns 12ns 120ma 20ns 18ns 95ma rev: 1.0 4 3 / 2000 2/23 ? 2000, giga semiconductor, inc. specifications cited are subject to change without notice. for latest documentation see http://www.gsite...
Description 100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM

File Size 345.69K  /  23 Page

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    http://
Part No. K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8S6415EBB-FC7C
OCR Text ...66mhz, the k8s6415e provides an 11ns burst access time and 70ns initial access time. the device performs a program opera- tion in units of single 16 bits (word) and an erase operation in units of a block. single or multiple blocks can be e...
Description 64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory

File Size 681.03K  /  39 Page

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    GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T-10I

GSI Technology, Inc.
http://
Part No. GS880F36T-11I GS880F36T-14I GS880F32T-12 GS880F36T-10I
OCR Text ... kq tcycle i dd 10ns 10ns 225ma 11ns 15ns 180ma 11.5ns 15ns 180ma 12ns 15ns 180ma 14ns 15ns 175ma rev: 1.0 3 3/2000 2/25 ? 2000 , giga semiconductor, inc. specifications cited are subject to change without notice. for latest documentat...
Description 512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 8 ns, PQFP100

File Size 353.81K  /  25 Page

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    IDT
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
Part No. 723631L15PQF9 IDT723641L15PF8 IDT723641L15PQF IDT723651L20PQFI IDT723641L20PQFI IDT723631L20PQFI IDT723651L20PF IDT723651L20PF8 IDT723651L20PFI IDT723651L15PQF IDT723651L20PFI8 IDT723651L15PF8 IDT723631 IDT723631L15PF IDT723631L15PF8 IDT723631L15PQF IDT723631L20PF IDT723631L20PF8 IDT723631L20PFI IDT723631L20PFI8
OCR Text ... ? ? ? ? ? fast access times of 11ns ? ? ? ? ? free-running clka and clkb can be asynchronous or coinci- dent (permits simultaneous reading and writing of data on a single clock edge) ? ? ? ? ? clocked fifo buffering data from port a to por...
Description 512 x 36 SyncFIFO, 5.0V
2K x 36 SyncFIFO, 5.0V
1K x 36 SyncFIFO, 5.0V
512 X 36 OTHER FIFO, 11 ns, PQFP132 PLASTIC, QFP-132

File Size 219.06K  /  21 Page

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    Integrated Device Technology, Inc.
Part No. 723631L15PQFG
OCR Text ... ? ? ? ? ? fast access times of 11ns ? ? ? ? ? free-running clka and clkb can be asynchronous or coinci- dent (permits simultaneous reading and writing of data on a single clock edge) ? ? ? ? ? clocked fifo buffering data from port a to por...
Description 512 X 36 OTHER FIFO, 11 ns, PQFP132 PLASTIC, QFP-132

File Size 210.62K  /  21 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K4D263238M-QC40
OCR Text ... corrected trcdwr from 5.5ns to 11ns. corrected tdal from 5tck to 6tck ? changed tqh of k4d263238m-qc60 from thp-0.75ns to thp-0.5ns ? add dc characteristics value ? define v ih (max) / v il (min) as a note in power & dc operating condit...
Description 4M X 32 DDR DRAM, 0.6 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100

File Size 151.28K  /  19 Page

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    Samsung Semiconductor Co., Ltd.
Part No. K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K4D263238M-QC600 K4D263238M-QC55 K4D263238M-QC450 K4D263238M-QC550
OCR Text ... corrected trcdwr from 5.5ns to 11ns. corrected tdal from 5tck to 6tck ? changed tqh of k4d263238m-qc60 from thp-0.75ns to thp-0.5ns ? add dc characteristics value ? define v ih (max) / v il (min) as a note in power & dc operating condit...
Description DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL

File Size 284.29K  /  19 Page

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For 11ns Found Datasheets File :: 181    Search Time::0.969ms    
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