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For trench-based Found Datasheets File :: 1918    Search Time::1.609ms    
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    AOD414 AOD414L

ALPHA & OMEGA Semiconductor
ETC
List of Unclassifed Manufacturers
Part No. AOD414 AOD414L
OCR Text ...ption The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This ...based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any a ...
Description N-Channel Enhancement Mode Field Effect Transistor

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    AOD419

Alpha & Omega Semiconductors
Part No. AOD419
OCR Text trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK p...based on R JA and the maximum allowed junction temperature of 150C. The value in any given applicati...
Description P-Channel Enhancement Mode Field Effect Transistor

File Size 115.48K  /  5 Page

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    AOD480

Alpha & Omega Semiconductor...
Alpha & Omega Semiconductors
AOSMD
Part No. AOD480
OCR Text trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and g...based on R JA and the maximum allowed junction temperature of 150C. The value in any given applicati...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 111.65K  /  5 Page

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    AOD488

AOSMD
Alpha & Omega Semiconductors
Part No. AOD488
OCR Text trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and ...based on R thJA and the maximum allowed junction temperature of 150 C. The value in any given applic...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 119.30K  /  5 Page

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    AOD494

AOSMD
Alpha & Omega Semiconductors
Part No. AOD494
OCR Text trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general pu...based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 124.03K  /  5 Page

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    AOD496

Alpha & Omega Semiconductors
AOSMD
Part No. AOD496
OCR Text trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general pu...based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 115.06K  /  5 Page

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    AOL1400L AOL1400

Alpha & Omega Semicondu...
Alpha & Omega Semiconductors
Part No. AOL1400L AOL1400
OCR Text trench technology to provide excellent R DS(ON), shoot-through immunity and good body diode characteristics. This device is ideally suited f...based on R JA and the maximum allowed junction temperature of 150C. The value in any given applicati...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 115.98K  /  5 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AOL1412
OCR Text trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable ...based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 157.34K  /  6 Page

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    Alpha & Omega Semicondu...
AOSMD[Alpha & Omega Semiconductors]
Part No. AOL1428
OCR Text trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general pu...based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 121.57K  /  5 Page

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    AOL1442

AOSMD
Alpha & Omega Semiconductors
Part No. AOL1442
OCR Text trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and ...based on R JA and the maximum allowed junction temperature of 150C. The value in any given applicati...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 154.91K  /  5 Page

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For trench-based Found Datasheets File :: 1918    Search Time::1.609ms    
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