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For measured Found Datasheets File :: 132982    Search Time::1.234ms    
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    IR2110E6

IRF[International Rectifier]
Part No. IR2110E6
OCR Text ...d Power Dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol VB VS VHO VCC VLO VDD VSS VIN dVS/dt PD RthJA Tj TS TL Parameter High Side Floatin...
Description HIGH AND LOW SIDE DRIVER

File Size 306.76K  /  14 Page

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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...d Power Dissipation ratings are measured under board mounted and still air conditions. Parameter VB VS VHO VCC VLO VDD VSS VIN dVs/dt PD RJA TJ TS TL High Side Floating Supply Voltage High Side Floating Supply Offset Voltage High Side F...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ...d Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO V CC VLO V DD VSS V IN dV s/dt PD RthJA TJ TS TL Parameter High Side Floating Supply Voltage High Side Floating Supply Offset Volta...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ...d power dissipation ratings are measured under board mounted and still air conditions. Additional information is shown in Figures 28 through 35. Symbol VB VS VHO VCC VLO VDD VSS VIN dVs/dt PD RTHJA TJ TS TL Definition High side floa...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...inued) SYMBOL CISS COSS CRSS LD measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MO...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...inued) SYMBOL CISS COSS CRSS LD measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die measured From The Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MO...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...application note #AN-994. R is measured at TJ of approximately 90C. 2 www.irf.com IRF2804S-7P 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Cur...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ...application note #AN-994. R is measured at TJ of approximately 90C. 2 www.irf.com IRF2907Z/S/L 10000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1000 TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ID, Drain-to-Source Cur...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 359.66K  /  12 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...ance nA nC ns nH measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance -- -- -- 4200 900 400...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ... 10 V; RG = 5.6 Resistive load measured tab to centre of die measured from drain lead to centre of die (SOT78 package only) measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz REVERSE DIODE LIMITING VALUES AND ...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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For measured Found Datasheets File :: 132982    Search Time::1.234ms    
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