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Alpha & Omega Semiconductor
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| Part No. |
AOTF5B65M2
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| OCR Text |
...t recovery freewheeling diode ? high efficient turn-on di/dt controllability ? low vce(sat) enables high efficiencies ? low turn-off switchi...energy diode reverse recovery time turn-off energytotal switching energy turn-off energy turn-on ris... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
563.84K /
9 Page |
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it Online |
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Infineon Technologies AG
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| Part No. |
IPW65R190C6 IPA65R190C6 IPP65R190C6
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| OCR Text |
... a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon...energy, single pulse e as --485 mj i d =3.5 a, v dd =50 v avalanche energy, repetitive e ar - - 0.73... |
| Description |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
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| File Size |
2,189.49K /
19 Page |
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it Online |
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Motorola
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| Part No. |
MC33888FB
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| OCR Text |
High Side and Octal Low Side Switch for Automotive
This QHSOLSS is a single packaged combination of four discrete high-side FETs and an int...Energy (Note 4) HS2,3 Output Clamp Energy (Note 5) LS Output Clamp Energy (Note 6) Storage Temperatu... |
| Description |
MC33888FB Quad High Side and Octal Low Side Switch for Automotive
From old datasheet system
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| File Size |
252.50K /
18 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
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| Part No. |
CM1000HC-66R
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| OCR Text |
high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules ...energy (note 5) t j = 150c ? 2.00 ? j t j = 25c ? 1.50 ? t j = 125c ? 1.95 ? e ... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
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| File Size |
527.86K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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