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SGS Thomson Microelectronics
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| Part No. |
AN1232
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| OCR Text |
...ws range. by using the existing diffusion processes it is not possible to change the body doping value in order to reduce either the dc gain (h fe ) or the r be . this would have a dramatic impact on the dmos threshold voltage. the only way... |
| Description |
RUGGEDNESS IMPROVEMENT OF RF DMOS DEVICES
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| File Size |
53.51K /
4 Page |
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Samsung Electronic
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| Part No. |
STDH90
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| OCR Text |
... rams and roms C up to 512k-bit diffusion rom available C up to 128k-bit single-port static ram available C up to 64k-bit dual-port static ram q con?gurable datapath elements available C 4-64 bit bus width C adder, alu, barrel shifter, carr... |
| Description |
0.35 Micron STDH90 Library Introduction
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| File Size |
39.38K /
21 Page |
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California Eastern Laboratories
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| Part No. |
GET-30704
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| OCR Text |
...ation. a shallow emitter by diffusion from as-doped polysilicon. (4) an emitter of 0.5 .u m width processed by photo lithograph. (5) a nitride passivation film. (6) a ti-pt-au electrode structure.
3. .qualificat... |
| Description |
Qualification Test Results on Si MMIC
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| File Size |
8,711.33K /
20 Page |
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Hamamatsu
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| Part No. |
S6493 S6494 S6495
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| OCR Text |
...ts kmpdc0072ea h w p photodiode diffusion area mechanical specifications parameter symbol * 1 s6493-64 s6493-128 s6494-64 s6494-128 unit element pitch p 0.8 0.4 1.6 0.8 element diffusion width w 0.6 0.25 1.3 0.6 element height h 0.8 0.4 1... |
| Description |
(S6493 - S6495) Photodiode
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| File Size |
320.88K /
12 Page |
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Hamamatsu Photonics
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| Part No. |
S3902 S3903 S3903-1024Q S3903-512Q
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| OCR Text |
...unction consisting of an N-type diffusion layer formed on a P-type silicon substrate. A signal charge generated by light input accumulates as a capacitive charge in this PN junction. The N-type diffusion layer provides high UV sensitivity b... |
| Description |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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| File Size |
217.07K /
6 Page |
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Hamamatsu Photonics K.K.
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| Part No. |
S8865-64
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| OCR Text |
...Parameter Element pitch Element diffusion width Element height Number of elements Active area length *1: Refer to following figure. Symbol * P W H S8865-64 0.8 0.7 0.8 64 51.2 S8865-128 0.4 0.3 0.6 128 51.2 Unit mm mm mm mm
I Enlarged vi... |
| Description |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
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| File Size |
162.57K /
6 Page |
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WEDC
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| Part No. |
ENH050Q1-320 ENH050Q1-450
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| OCR Text |
...ts - IM/Clear and IM/110 (a 10% diffusion).The second enhancement is the incorporation of a reflective polarizer (RP) to improve brightness by up to 40%. The third enhancement is the addition of prism films (RPp) further increasing the brig... |
| Description |
(ENH050Q1-xxx) Color TFT-LCD Module Features GENERAL DESCRIPTION
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| File Size |
352.10K /
21 Page |
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Renault
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| Part No. |
RADIOSAT4000
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| OCR Text |
...s repartis et orientes pour une diffusion optimale du son. Pour des raisons de securite, cet appareil est code. En effet, a chaque coupure d'alimentation en + avant contact, il est necessaire d'introduire un code (quatre chiffres) donne par... |
| Description |
Auto Radio
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| File Size |
175.67K /
49 Page |
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Price and Availability
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