AOTF5B60D 600v, 5a alpha igbt tm with diode general description product summary v ce i c (t c =100c) 5a v ce(sat) (t c =25c) 1.55v symbol v the alpha igbt tm line of products offers best-in-class performance in conduction and switching losses, wit h robust short circuit capability. they are designed for ease of paralleling, minimal gate spike under high dv/dt conditions and resistance to oscillations. the co- packaged soft diode is optimized to minimize losses in motor control applications. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOTF5B60D 600v collector-emitter voltage 600 g c e top view AOTF5B60D to-220f g c e v ce v ge i cm i lm diode pulsed current, limited by t jmax i fm t sc t j , t stg t l symbol r ja r jc r jc note a:i c limited by package limitation pulsed collector current, limited by t jmax continuous diode forward current t c =25c i f 10 a t c =100c 5 14 5.8 i c gate-emitter voltage t c =100c w units a a parameter 20 v 20 a a 20 continuous collector current a t c =25c turn off soa, v ce 600v, limited by t jmax 65 12.5 c 20 AOTF5B60D maximum junction-to-ambient 10 s t c =100c maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds c power dissipation p d short circuit withstanding time v ge = 15v, v ce 400v, delay between short circuits 1.0s, t c =25c junction and storage temperature range t c =25c thermal characteristics 300 -55 to 150 31.2 c/w v collector-emitter voltage 600 c/w 4 maximum diode junction-to-case c/w 4 maximum igbt junction-to-case g c e top view AOTF5B60D to-220f g c e rev.3.0: jan 2014 www.aosmd.com page 1 of 9 downloaded from: http:///
AOTF5B60D symbol min typ max units bv ces collector-emitter breakdown voltage 600 - - v t j =25c - 1.55 1.8 t j =125c - 1.78 - t j =150c - 1.85 - t j =25c - 1.46 1.75 t j =125c - 1.36 - t j =150c - 1.3 - v ge(th) gate-emitter threshold voltage - 6 - v t j =25c - - 10 t j =125c - - 100 t j =150c - - 500 i ges gate-emitter leakage current - - 100 na g fs - 2.3 - s c ies - 367 - pf c oes - 34 - pf c res - 1.47 - pf q g - 9.4 - nc q ge - 3.15 - nc q gc - 3.6 - nc i c(sc) - 21 - a r g - 3 - t d(on) - 12 - ns t r - 15 - ns turn-on rise time turn-on delaytime t j =25c gate to collector charge gate to emitter charge v ge =15v, v ce =480v, i c =5a switching parameters, (load iductive, t j =25c) short circuit collector current, max. 1000 short circuits, delay between short circuits 1.0s v ge =15v, v ce =400v, r g =60 total gate charge gate resistance v ge =0v, v ce =0v, f=1mhz electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions reverse transfer capacitance v ge =0v, v ce =25v, f=1mhz v ce =20v, i c =5a v ce =0v, v ge =20v forward transconductance v ce(sat) i c =1ma, v ge =0v, t j =25c v ge =15v, i c =5a v v ce =600v, v ge =0v v ge =0v, i c =5a v collector-emitter saturation voltage output capacitance input capacitance i ces zero gate voltage collector current v f diode forward voltage dynamic parameters a v ce =v ge , i c =1ma t r - 15 - ns t d(off) - 83 - ns t f - 12 - ns e on - 0.14 - mj e off - 0.04 - mj e total - 0.18 - mj t rr - 98 - ns q rr - 0.23 - c i rm - 4.4 - a t d(on) - 10 - ns t r - 16 - ns t d(off) - 108 - ns t f - 16 - ns e on - 0.18 - mj e off - 0.09 - mj e total - 0.27 - mj t rr - 166 - ns q rr - 0.4 - c i rm - 5.2 - a this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. t j =150c i f =5a,di/dt=200a/ s,v ce =400v diode reverse recovery charge diode peak reverse recovery current turn-on delaytime t j =150c v ge =15v, v ce =400v, i c =5a, r g =60 , parasitic inductance = 100nh turn-on rise time turn-off delay time turn-off fall time turn-on energy diode reverse recovery time turn-off energy total switching energy turn-off energy turn-on rise time switching parameters, (load iductive, t j =150c) diode reverse recovery time diode reverse recovery charge diode peak reverse recovery current t j =25c i f =5a,di/dt=200a/ s,v ce =400v turn-off delay time t j =25c v ge =15v, v ce =400v, i c =5a, r g =60 , parasitic nductance=100nh total switching energy turn-off fall time turn-on energy rev.3.0: jan 2014 www.aosmd.com page 2 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4 : diode characteristic 25 c 150 c -40 c 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 5 10 15 20 4 7 10 13 16 i c (a) v ge (v) fig 3 : transfer characteristic 150 c 25 c -40 c v ce =20v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =150c ) v ge =7v 9v 20v 17 v 15v 11v 13v 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i f (a) v f (v) fig 4: diode characteristic 25 c 150 c -40 c 0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 1: output characteristic (t j =25c ) 9v 20v 17 v 15v 11v v ge = 7v 13v 0 5 10 15 20 4 7 10 13 16 i c (a) v ge (v) fig 3: transfer characteristic 150 c 25 c -40 c 0 1 2 3 4 0 25 50 75 100 125 150 v ce(sat) (v) temperature (c) fig 5: collector-emitter saturation voltage vs. junction temperature i c =10a i c =2.5a i c =5a 0 5 10 15 20 25 30 0 10 20 30 40 50 60 5 8 11 14 17 20 current(a) time ( ? s) v ge (v) fig 6: v ge vs. short circuit time (v ce =400v,t c =25c ) v ce =20v 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 i c (a) v ce (v) fig 2: output characteristic (t j =150c ) v ge =7v 9v 20v 17 v 15v 11v 13v rev.3.0: jan 2014 www.aosmd.com page 3 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10 : reverse bias soa 0 3 6 9 12 15 0 2 4 6 8 10 v ge (v) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =5a 1 10 100 1000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 1 10 100 10 100 1,000 i c (a) v ce (v) fig 10: reverse bias soa (t j =150c,v ge =15v) 0 3 6 9 12 15 0 2 4 6 8 10 v ge (v) q g (nc) fig 7: gate-charge characteristics v ce =480v i c =5a 0 5 10 15 20 25 30 35 25 50 75 100 125 150 power disspation (w) t case (c) fig 11: power disspation as a function of case 1 10 100 1000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ce (v) fig 8: capacitance characteristic c ies c res c oes 0 2 4 6 8 10 25 50 75 100 125 150 current rating i c (a) t case (c) fig 12: current de-rating rev.3.0: jan 2014 www.aosmd.com page 4 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 1 10 100 1000 0 3 6 9 12 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 ? ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 100 200 300 400 500 600 switching time (ns) r g ( ? ) figure 14: switching time vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) td(off) tf td(on) tr 10 100 1000 switching time (ns) td(off) tf td(on) tr 2 4 6 8 10 v ge(th) (v) 1 10 100 1000 0 3 6 9 12 switching time (ns) i c (a) figure 13: switching time vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 ? ) td(off) tf td(on) tr 1 10 100 1,000 10,000 0 100 200 300 400 500 600 switching time (ns) r g ( ? ) figure 14: switching time vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) td(off) tf td(on) tr 1 10 100 1000 0 50 100 150 200 switching time (ns) t j (c) figure 15: switching time vs.t j ( v ge =15v,v ce =400v,i c =5a,r g =60 ? ) td(off) tf td(on) tr 0 2 4 6 8 10 0 30 60 90 120 150 v ge(th) (v) t j (c) figure 16: v ge(th) vs. t j rev.3.0: jan 2014 www.aosmd.com page 5 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 3 6 9 12 e,switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 ? ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 switching energy (mj) r g ( ? ) figure 18: switching loss vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) eoff eon etotal 0.1 0.2 0.3 0.4 switching energy (mj) eoff eon etotal 0.1 0.2 0.3 0.4 switching energ y (mj) eoff eon etotal 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 3 6 9 12 e,switching energy (mj) i c (a) figure 17: switching loss vs. i c (t j =150c,v ge =15v,v ce =400v,r g =60 ? ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 100 200 300 400 500 600 switching energy (mj) r g ( ? ) figure 18: switching loss vs. r g (t j =150c,v ge =15v,v ce =400v,i c =5a) eoff eon etotal 0 0.1 0.2 0.3 0.4 0 25 50 75 100 125 150 175 switching energy (mj) t j (c) figure 19: switching loss vs. t j (v ge =15v,v ce =400v,i c =5a,r g =60 ? ) eoff eon etotal 0.0 0.1 0.2 0.3 0.4 200 250 300 350 400 450 500 switching energ y (mj) v ce (v) figure 20: switching loss vs. v ce (t j =150c,v ge =15v,i c =5a,r g =60 ? ) eoff eon etotal rev.3.0: jan 2014 www.aosmd.com page 6 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 0 3 6 9 12 15 18 0 50 100 150 200 250 300 0 3 6 9 12 s t rr (ns) 150 c 25 c 150 c 25 c t rr s 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 3 6 9 12 i rm (a) q rr (nc) 25 c 150 c 150 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 0 25 50 75 100 125 150 175 i ce(s) (a) temperature (c ) fig 21: diode reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.7 1.2 1.7 2.2 0 25 50 75 100 125 150 175 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10a 5a if=1a 0 3 6 9 12 15 18 0 50 100 150 200 250 300 0 3 6 9 12 s t rr (ns) i s (a) fig 24: diode reverse recovery time and softness factor vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ ? s) 150 c 25 c 150 c 25 c t rr s 0 5 10 15 20 25 30 0 100 200 300 400 500 600 0 3 6 9 12 i rm (a) q rr (nc) i f (a) fig 23: diode reverse recovery charge and peak current vs. conduction current (v ge =15v,v ce =400v, di/dt=200a/ ? s) 25 c 150 c 150 c 25 c q rr i rm 13v 1.e-08 1.e-07 1.e-06 1.e-05 1.e-04 0 25 50 75 100 125 150 175 i ce(s) (a) temperature (c ) fig 21: diode reverse leakage current vs. junction temperature v ce =600v v ce =400v 0.2 0.7 1.2 1.7 2.2 0 25 50 75 100 125 150 175 v sd (v) temperature (c ) fig 22: diode forward voltage vs. junction temperature 15a 10a 5a if=1a 0 4 8 12 16 20 0 40 80 120 160 200 100 200 300 400 500 600 700 800 900 s t rr (ns) di/dt (a/ ? s) fig 26: diode reverse recovery time and softness factor vs. di/dt (v ge =15v,v ce =400v,i f =5a) 25 c 150 c 25 c 150 c t rr s 0 10 20 30 40 50 60 0 100 200 300 400 500 600 100 200 300 400 500 600 700 800 900 i rm (a) q rr (nc) di/dt (a/ ? s) fig 25: diode reverse recovery charge and peak current vs. di/dt (v ge =15v,v ce =400v,i f =5a) 150 c 25 c 150 c 25 c q rr i rm rev.3.0: jan 2014 www.aosmd.com page 7 of 9 downloaded from: http:///
AOTF5B60D typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z ? jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1 e - 05 0 . 0001 0 . 001 0 . 01 0 . 1 1 10 z ? jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z ? jc normalized transient thermal resistance pulse width (s) figure 27: normalized maximum transient thermal imp edance for igbt d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z ? jc normalized transient thermal resistance pulse width (s) figure 28: normalized maximum transient thermal imp edance for diode d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev.3.0: jan 2014 www.aosmd.com page 8 of 9 downloaded from: http:///
AOTF5B60D rev.3.0: jan 2014 www.aosmd.com page 9 of 9 downloaded from: http:///
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