wnm2096 will semiconductor ltd. 1 feb ,2019 - rev.1.0 wnm2096 single n - channel, 20 v, 0.8 a, power mosfet description the wnm 2096 is n - channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds(on) w ith low gate charge. this device is suitable for use in dc - dc conversion, power switch and charging circuit. standard product wnm 2096 is pb - free. features ? trench technology ? supper high density cell design ? e xcellent on resistance ? extremely low threshold voltage ? small package dfn1006 - 3l applications ? d c/dc converters ? power supply converters circuit ? load/power switching for po r table device dfn 1006 - 3l pin configuration (top view) 6 = device code * = month (a~z) marking order i nformation v ds (v) typical r ds(on) (m ) 20 325 @ v gs = 4.5 v 370 @ v gs = 3.1 v 420 @ v gs =2.5v 560 @ v gs =1.8v esd rating 2000v hbm device package shipping wnm2096 - 3 /tr dfn 1006 - 3 l 10k /tape&reel http://www.sh - willsemi.com 6 * d g s
wnm2096 will semiconductor ltd. 2 feb ,2019 - rev.1.0 absolute maximum ratings thermal resistance ratings a the value of r ja is measured with the device mounted on 1 - inch2 (6.45cm2) with 2oz.(0.071mm thick) copper pad on a 1.5*1.5 inch2, 0.06 - inch thick fr4 pcb, in a still air environment with t a =25c. the power dissipation p d is based on r ja value and the t j(max) =150c. the value in any given application is determined by the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it to. b the value of r ja is measured with the device mounted on fr - 4 minimum pad board, in a still air envi ronment with t a =25c. the power dissipation p d is based on r ja value and the t j(max) =150c. the value in any given application is determined by the user's specific board design, and the maximum temperature of 150c may be used if the pcb allows it to. c re petitive rating, ~10us pulse width, duty cycle ~1%, keep initial t j =25c, the maximum allowed junction temperature of 150c. d the maximum current rating by source bonding technology e the static characteristics are obtained using ~380us pulses, duty cycle ~1 %. . parameter symbol maximum unit drain - source voltage v ds 20 v gate - source voltage v gs 10 continuous drain current d t a =25c i d 800 m a t a =70c 640 pulsed drain current c i dm 3 000 ma power dissipation a t a =25c p d 480 m w t a =70c 305 operating junction temperature t j - 55 to 150 c storage temperature range t stg - 55 to 150 c single operation parameter symbol maximum unit junction - to - ambient thermal resistance a t 10 s r ja 216 c/w steady state 262 junction - to - ambient thermal resistance b t 10 s r ja 464 steady state 580
wnm2096 will semiconductor ltd. 3 feb ,2019 - rev.1.0 electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain - to - source breakdown voltage b v dss v gs = 0 v, i d = 250 u a 20 v zero gate voltage drain current i dss v ds = 16 v, v gs = 0v 1 u a gate - t o - s ource leakage current i gss v ds = 0 v, v gs = 10 v 10 u a on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 2 5 0u a 0.4 0 . 7 1 .0 v drain - t o - s ource on - r esistance r ds(on) v gs = 4.5 v , i d = 0.55 a 325 500 m? v gs = 3.1 v , i d = 0.35 a 370 570 v gs = 2.5 v , i d = 0.25 a 420 700 v gs = 1.8 v , i d = 0.15 a 560 1500 charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1 .0 mhz, v ds = 1 0 v 29 pf output capacitance c oss 11 reverse transfer capacitance c rss 4 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 0.55 a 1.1 nc threshold gate charge q g(th) 0.11 gate - to - source charge q gs 0.15 gate - to - drain charge q gd 0.32 switching characteristics turn - on delay time td(on) v gs = 4.5 v, v ds = 10 v, i d =0.55a , r g = 6 ? 5 ns rise time tr 5.8 turn - off delay time td(off) 15.4 fall time tf 3.6 body diode characteristics forward voltage v sd v gs = 0 v, i s = 0.8 a 0. 9 1 .1 v
wnm2096 will semiconductor ltd. 4 feb ,2019 - rev.1.0 typical characteristics (ta=25 o c, unless otherwise noted) output c haracteristics e on - resistance vs. d rain current e on - resistance vs. junction temperature e transfer c haracteristics e on - resistance vs. gate - to - source voltage e threshold v oltage vs. temperature 0 5 10 15 20 0 2 4 6 v gs =10v v gs =8v v gs =6v i ds -drain-to-source current (a) v ds -drain-to-source voltage(v) v gs =5.5v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =4.5v v gs =2.5v v gs =3.1v v gs =1.8v i d -drain-to-source current(a) v ds -drain-to-source voltage(v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t=-50 o c t=25 o c t=150 o c i ds -drain to source current(a) v gs -gate to source voltage(v) v ds =2v 1 2 3 4 5 6 7 8 9 10 200 300 400 500 600 700 i d =0.55a r ds(on) -on resistance ( m ? v gs -gate to source voltage (v) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =4.5v i d =0.55a r ds(on) -on resistance normalized temperature ( o c ) -50 -25 0 25 50 75 100 125 150 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 i d =250ua gate threshold voltage normalized temperature ( o c ) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 250 300 350 400 450 500 v gs =4.5v v gs =3.1v r ds(on) -resistance ( m ? i ds -drain to source current(a)
wnm2096 will semiconductor ltd. 5 feb ,2019 - rev.1.0 capacitance single p ulse power body diode forward voltage e safe o perating p ower gate c harge c haracteristics 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1 2 3 4 5 t=-50 o c t=25 o c t=150 o c i sd -source to drain current (a) v sd -source to drain voltage (v) 0.0 0.3 0.6 0.9 1.2 1.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v gs =4.5v v ds =10v i d =0.55a v gs -gate to source voltage (v) gate charge characteristics (nc) 0 2 4 6 8 10 0 10 20 30 40 50 c rss c oss c iss v gs =0 f=1mhz c-capacitance(pf) v ds -source to source voltage(v) 1e-4 1e-3 0.01 0.1 1 10 100 1000 5 10 15 20 25 30 t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c t j(max) =25 o c t a =25 o c power(w) pulse width(s) 0.01 0.1 1 10 100 0.01 0.1 1 10 100us 1ms 10ms 100ms dc t j(max) =150 o c t a =25 o c single pulse limit by rdson 10s 1s i d -drain current (a) v ds -drain to source voltage(v)
wnm2096 will semiconductor ltd. 6 feb ,2019 - rev.1.0 transient thermal response (junction - to - ambient) 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-3 0.01 0.1 1 10 single pulse in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pluse normalized effective transient thermal impedance square wave pulse duration (s)
w nm2096 will semiconductor ltd. 7 feb ,2019 - rev.1.0 p ackage outline dimensions dfn1006 - 3l symbol dimensions in millimeters min. typ. max. a 0.36 - 0.50 a1 0.00 - 0.05 d 0.95 1.00 1.05 e 0.55 0.60 0.65 b 1 0.10 0.15 0.20 b 2 0.40 0.50 0.60 l 0.20 0.25 0.30 l 1 0.20 0.30 0.40 e 1 0.35ref e2 0.65 ref e2 e1 l l l1 ( ) ( ) ( ) ( ) e d b2 b1 top view bottom view side view a1 a
wnm2096 will semiconductor ltd. 8 feb ,2019 - rev.1.0 tape and reel information reel dimensions tape dimensions quadrant assignments for pin1 orientation in tape rd reel dimension w overall width of the carrier tape 1 p1 pitch between successive cavity centers pin1 pin1 quadrant user direction of feed w p1 q1 q2 q4 q3 q1 q2 q4 q3 reel dimensions rd 7inch 13inch 2mm 4mm 8mm q1 q2 q3 q4 8mm 12mm 16mm
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