dice specification rh1011 voltage comparator 1 die cross reference order dice candidate part number below ltc finished part number 1. ground 2. +in 3. in 4. v rh1011 rh1011 rh1011 dice rh1011 dwf die size: 80 48 mils thickness: 12 mils backside metal: gold pad function 4 1 7 8 6 5 2 3 note: backside (substrate) may be connected to v or no connection 5. balance 6. balance/strobe 7. output 8. v + information furnished by linear technology corporation is believed to be accurate and reliable. however, no responsibility is assumed for its use. linear technology corporation makes no represen- tation that the interconnection of its circuits as described herein will not infringe on existing patent rights. note: dwf = dice in wafer form absolute axi u rati gs w ww u supply voltage ....................................................... 36v output to negative supply ...................................... 50v ground to negative supply ..................................... 30v differential input voltage ....................................... 36v voltage at strobe pad ............................................ 5v input voltage ..................................... equal to supplies output short-circuit duration ............................. 10 sec junction temperature .......................................... 150 c (note 1)
2 dice specification rh1011 linear technology corporation 1630 mccarthy blvd., milpitas, ca 95035-7417 (408) 432-1900 fax: (408) 434-0507 www.linear.com lt/lt 0603 rev b ?printed in usa ? linear technology corporation 2000 rad hard die require special handling as compared to standard ic chips. rad hard die are susceptible to surface damage because there is no silicon nitride passivation as on standard die. silicon nitride protects the die surface from scratches by its hard and dense properties. the passivation on rad hard die is silicon dioxide that is much ?ofter than silicon nitride. ltc recommends that die handling be performed with extreme care so as to protect the die surface from scratches. if the need arises to move the die around from the chip tray, use a teflon-tipped vacuum wand. this wand can be made by pushing a small diameter teflon tubing onto the tip of a steel-tipped wand. the inside diameter of the teflon tip should match the die size for efficient pickup. the tip of the teflon should be cut square and flat to ensure good vacuum to die surface. ensure the teflon tip remains clean from debris by inspecting under stereoscope. during die attach, care must be exercised to ensure no tweezers touch the top of the die. wafer level testing is performed per the indicated specifications for dice. considerable differences in performance can often b e observed for dice versus packaged units due to the influences of packaging and assembly on certain devices and/or parameters. please consult factory for more information on dice performance and lot qualifications via lot sampling test procedures. dice data sheet subject to change. please consult factory for current revision in production. i.d.no. 66-13-1011 dice electrical test li its w v s = 15v, v cm = 0v, r s = 0 ? , t j = 25 c, v gnd = v symbol parameter conditions min max units v os input offset voltage (note 2) 1.5 mv r s 50k (note 3) 2.0 mv i os input offset current (note 3) 4na i b input bias current (note 2) 50 na (note 3) 65 na a vol large-signal voltage gain v s = 15v, r l = 1k, 10v v out 14.5v 200 v/mv v s = 5v, r l = 500 ? , 0.5v v out 4.5v 50 v/mv cmrr common mode rejection ratio 90 db input voltage range v s = 15v ?4.5 13 v v s = single 5v 0.5 3 v v ol output saturation voltage v in = 5mv, v gnd = 0v, i sink = 8ma 0.4 v i sink = 50ma 1.5 v output leakage current v in + = 5mv, v gnd = ?5v 10 na v out = 20v positive supply current (note 4) 4ma negative supply current (note 4) 2.5 ma strobe current minimum to ensure output transistor is off (notes 4, 5, 6) 500 a note 1: absolute maximum ratings are those values beyond which the life of a device may be impaired. note 2: output is sinking 1.5ma with v out = 0v. note 3: these specifications apply for all supply voltages from a single 5v to 15v, the entire input voltage range and for both high and low output states. the high state is i sink 100 a, v out (v + ?1v) and the low state is i sink 8ma, v out 0.8v. therefore, this specification defines a worst-case error band that includes effects due to common mode signals, voltage gain and output load. note 4: v gnd = 0v note 5: do not short the strobe pad to ground. it should be current driven at 3ma to 5ma for the shortest strobe time. currents as low as 500 a will strobe the rh1011 if speed is not important. external leakage on the strobe pin in excess of 0.2 a when the strobe is ?ff can cause offset voltage shifts. note 6: guaranteed by design, characterization or correlation to other tested parameters. note 7: please refer to ltc standard product data sheets for all other applicable information.
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