5? features identical channel to channel footprint current transfer ratio (ctr) range at i f =10 ma ild/q615-1: 40 ?80% min. ild/q615-2: 63 ?125% min. ild/q615-3: 100 ?200% min. ild/q615-4: 160 ?320% min. guaranteed ctr at i f =1 ma ild/q615-1: 13% min. ild/q615-2: 22% min. ild/q615-3: 34% min. ild/q615-4: 56% min. high collector-emitter voltage bv ceo =70 v dual and quad packages feature: - reduced board space - lower pin and parts count - better channel to channel ctr match - improved common mode rejection field-effect stable by trios (tr ansparent io n s hield ) isolation test voltage from double molded package, 5300 vac rms ul approval #e52744 vde #0884 available with option 1 maximum ratings (each channel) emitter reverse voltage ................................................ 6 v forward current ........................................... 60 ma surge current .................................................1.5 a power dissipation ...................................... 100 mw derate linearly from 25 c ................... 1.33 mw/ c detector collector-emitter reverse voltage .................. 70 v emitter-collector reverse voltage .................... 7 v collector current .......................................... 50 ma collector current (t <1 ms) .........................100 ma power dissipation ...................................... 150 mw derate linearly from 25 c........................ 2 mw/ c package storage temperature................... ?5 c to +150 c operating temperature ............... ?5 c to +100 c junction temperature.................................... 100 c soldering temperature (2 mm distance from case bottom) ........... 260 c package power dissipation, ild615.......... 400 mw derate linearly from 25 c.................. 5.33 mw/ c package power dissipation, ILQ615 ......... 500 mw derate linearly from 25 c................. 6.67 mw/ c isolation test voltage (t=1 sec.) ........ 5300 vac rms creepage ............................................... 7 mm min. clearance............................................... 7 mm min. isolation resistance v io =500 v, t a =25 c ............................... 3 10 12 w v io =500 v, t a =100 c ............................. 3 10 11 w description the ild/q615 are multi-channel phototransistor optocouplers that use gaas irled emitters and high gain npn phototransistors. these devices are con- structed using over/under leadframe optical coupling and double molded insulation technology resulting a withstand test voltage of 7500 vac peak and a working voltage of 1700 vac rms . the binned min./max. and linear ctr characteristics combined with the trios (transparent ion shield) ?ld-effect process make these devices well suited for dc or ac voltage detection. eliminating the phototransistor base connection provides added electrical noise immunity from the tran- sients found in many industrial control environments. because of guaranteed maximum non-saturated and saturated switching characteristics, the ild/q615 can be used in medium speed data i/o and control systems. the binned min./max. ctr speci?ation allow easy worst case interface calculations for both level detection and switching applica- tions. interfacing with a cmos logic is enhanced by the guaranteed ctr at an i f =1 ma. see appnote 45, ?ow to use optocoupler normalized curves. dimensions in inches (mm) .268 (6.81) .255 (6.48) 3 4 6 5 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) 4 typ. .100 (2.54) typ. 10 typ. 3 ? .305 typ. (7.75) typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 1 2 8 7 pin one i.d. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 1 2 3 4 8 7 6 5 collector emitter collector emitter anode cathode anode cathode collecto r emitter collecto r emitter collecto r emitter collecto r emitter anode cathode anode cathode anode cathode anode cathode 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 . 268 (6.81) . 255 (6.48) .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) 4 typ. .100 (2.54) typ. 10 typ. 3 ? .305 typ. (7.75) typ. .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43 ) .115 (2.92 ) pin one i.d. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) dual channel ild615 quad channel ILQ615 phototransistor optocoupler
5? ild/q615 characteristics, t a =25 c symbol min. typ. max. unit condition emitter forward voltage v f 1 1.15 1.3 v i f =10 ma breakdown voltage v br 630 vi r =10 m a reverse current i f 0.01 10 m av r =6 v capacitance c o 25 pf v r =0 v, f=1 mhz thermal resistance, junction to lead r thjl 750 c/w detector capacitance c ce 6.8 pf v ce =5 v, f=1 mhz collector-emitter leakage current, -1, -2 i ceo 250nav ce =10 v collector-emitter leakage current, -3, -4 i ceo 5 100 na v ce =10 v collector-emitter breakdown voltage bv ceo 70 v i ce =0.5 ma emitter-collector breakdown voltage bv eco 7vi e =0.1 ma thermal resistance, junction to lead r thjl 500 c/w package transfer characteristics channel/channel ctr match ctrx/ctry 1 to 1 2 to 1 i f =10 ma, v ce =5 v ild/q615-1 saturated current transfer ratio ctr cesat 25 % i f =10 ma, v ce =0.4 v current transfer ratio ctr ce 40 60 80 % i f =10 ma, v ce =5 v current transfer ratio ctr ce 13 30 % i f =1 ma, v ce =5 v ild/q615-2 saturated current transfer ratio ctr cesat 40 % i f =10 ma, v ce =0.4 v current transfer ratio ctr ce 63 80 125 % i f =10 ma, v ce =5 v current transfer ratio ctr ce 22 45 % i f =1 ma, v ce =5 v ild/q615-3 saturated current transfer ratio ctr cesat 60 % i f =10 ma, v ce =0.4 v current transfer ratio ctr ce 100 150 200 % i f =10 ma, v ce =5 v current transfer ratio ctr ce 34 70 % i f =1 ma, v ce =5 v ild/q615-4 saturated current transfer ratio ctr cesat 100 % i f =10 ma, v ce =0.4 v current transfer ratio ctr ce 160 200 320 % i f =10 ma, v ce =5 v current transfer ratio ctr ce 56 90 % i f =1 ma, v ce =5 v isolation and insulation common mode rejection, output high cmh 5000 v/ m sv cm =50 v p-p , r l =1 k w , i f =0 ma common mode rejection, output low cml 5000 v/ m sv cm =50 v p-p , r l =1 k w , i f =10 ma common mode coupling capacitance c cm 0.01 pf package capacitance ci-o 0.8 pf v io =0 v, f=1 mhz insulation resistance r s 10 14 w v io =500 v, t a =25 c channel to channel isolation 500 vac
5? ild/q615 switching times figure 1. non-saturated switching timing figure 2. saturated switching timing figure 3. non-saturated switching timing figure 4. saturated switching timing v o v cc =5 v r l =75 w f=10 khz, df=50% i f =10 ma v o v cc =5 v r l f =10 khz, d f=50% v 0 i f t phl t s t r t f t d 50% t plh i f t r v o t d t s t f t phl t plh v th =1.5 v figure 5. maximum led current versus ambient temperature parameter typ. unit test condition t on 3.0 m s r l =75 w i f =10 ma v cc =5 v t r 2.0 m s t off 2.3 m s t f 2.0 m s t phl propagation h-l (50% of v pp ) 1.1 m s t phl propagation l-h 2.5 m s parameter -1 i f =20 ma -1,-3 i f =10 ma -4 i f =5ma test condition typ. typ. typ. unit t on 3.0 4.3 6.0 m s r l =1 w v cc =5 v v th =1.5 v t r 2.0 2.8 4.6 m s t off 18 25 25 m s t f 11 14 15 m s t phl propagation h-l 1.6 2.6 5.4 m s t plh propagation l-h 8.6 7.2 7.4 m s --60 -40 -20 0 20 40 60 80 10 0 120 100 80 60 40 0 20 ta - ambient temperature - c if - maximum led current - ma tj (max)=100 c
5? ild/q615 figure 6. maximum led power dissipation figure 7. forward voltage versus forward current figure 8. peak led current versus pulse detection, tau figure 9. maximum detector power dissipation --60 -40 -20 0 20 40 60 80 10 0 200 100 0 50 ta - ambient temperature - c p led - led power - mw 150 100 10 1 .1 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 if - forward current - ma vf - forward voltage - v ta = -55 c ta = 25 c ta = 85 c 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 100 1000 10000 t - led pulse duration - s if(pk) - peak led current - ma .005 .05 .02 .01 .1 .2 .5 duty factor t t df = /t t -60 -40 -20 0 20 40 60 80 100 0 50 100 150 200 ta - ambient temperature - c p - detector power - mw det figure 10. maximum collector current versus collector voltage figure 11. normalization factor for non-saturated and saturated ctr t a =25 c versus if figure 12. normalization factor for non-saturated and saturated ctr t a =50 c versus if figure 13. normalization factor for non-saturated and saturated ctr t a =70 c versus if .1 1 10 100 .1 1 10 100 1000 vce - collector-emitter voltage - v ice - collector current - ma 25 c 50 c 75 c 90 c rth = 500 c/w .1 1 10 100 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 25 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce .1 1 10 100 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 50 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce .1 1 10 100 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 70 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce
5? ild/q615 figure 14. normalization factor for non-saturated and saturated ctr t a =85 c versus if figure 15. collector-emitter current versus temperature and led current figure 16. collector-emitter leakage versus temperature .1 1 10 100 0.0 0.5 1.0 1.5 2.0 normalized to: vce = 10v, if = 5ma, ta = 25 c ta = 100 c ctrce(sat) vce = 0.4v ctrnf - normalized ctr factor if - led current - ma nctrce(sat) nctrce ta=100 c 60 50 40 30 20 10 0 0 5 10 15 20 25 30 35 50 c 70 c 85 c if - led current - ma ice - collector current - ma 25 c 100 80 60 40 20 0 -20 10 10 10 10 10 10 10 10 -2 -1 0 1 2 3 4 5 ta - ambient temperature - c iceo - collector-emitter - na typical vce = 10v figure 17. -1 propagation delay versus collector load re- sistor figure 18. -2, -3 propagation delay versus collector load resistor figure 19. -4 propagation delay versus collector load resistor .1 1 10 100 1 10 100 1000 1.0 1.5 2.0 2.5 3.0 3.5 4.0 rl - load resistor - k w tplh - propagat ion low- high - m s tphl - propagation high- low - m s tplh tp h l ta = 25 c, if = 10ma vcc = 5v, vth = 1.5v .1 1 10 100 1 10 100 1000 1.0 1.5 2.0 2.5 rl - collector load resistor - k w tplh - propagation low-high - m s tphl - propagation high-low - m s tplh tphl ta = 25 c, if = 10ma vcc = 5v, vth = 1.5v .1 1 10 100 1 10 100 1000 1.0 1.5 2.0 2.5 rl - collector load resistor - k w tplh - propagation low-high - m s tphl - propagation high-low - m s tplh tphl ta = 25 c, if = 10ma vcc = 5v, vth = 1.5v
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