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v ce = 650 v, i c = 15 a trench field stop igbt fga6 5a 3h data sheet FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 1 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 description FGA65A3H is 650 v field stop igbt. sanken original trench structure decreases gate capacitance, and achieves high speed switching and switching loss reduction. thus, field stop igbt can improve the efficiency of your circuit. features low saturation voltage high speed switching bare lead frame: pb - free ( rohs compliant ) v ce -------------------------------- ---------------------- 650 v i c ( t c = 100 c ) -------------------------------- --------- 15 a short c ircuit w ithstand t ime ----------------------- 10 s v ce(sat) -------------------------------- --------------- 1. 9 v typ. t f (t j = 175 c ) -------------------------------- ---- 60 ns typ. application s dcm and crm pfc c ircuit package s to3pf - 3l not to scale 35mm (1) (2) (3) ( 2 ) ( 3 ) ( 1 ) ( 1 ) gate ( 2 ) collector ( 3 ) emitter
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 2 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 absolute maximum ratings unless otherwise specified, t a = 25 c . parameter symbol c onditions rating unit remarks collector to emitter voltage v ce 650 v gate to emitter voltage v g e 3 0 v continuous collector current i c t c = 25 c 25 a t c = 100 c 15 a pulsed collector current i c(pulse) p w i f t c = 25 c 0.5 a t c = 100 c 0.2 a diode pulsed forward current i f(pulse) p w sc v ge = 15 v, v ce = 400 v , t j = 175 c 10 s d t c = 25 c 72 w operating junction temperature t j 1 75 c storage temperature t stg ? iso(rms) between surface of case and each pin; ac, 60 hz, 1 min 1500 v thermal characteristics parameter symbol conditions m in . t yp . m ax . unit remark s thermal resistance ( junction to case ) r jc 2.08 c/w
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 3 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 electrical characteristics unless otherwise specified, t a = 25 c . parameter symbol conditions min. typ. max. unit collector to emitter breakdown voltage v (br)ces i c = 100 a, v ge = 0 v 650 ces v ce = 650 v, v ge = 0 v ges v ge = 30 v ge(th) v ce = 10 v, i c = 1 ma 4.0 5.5 7.0 v collector to emitter saturation voltage v ce(sat) v ge = 15 v, i c = 30 a ies v ce = 20 v, v ge = 0 v, f = 1.0 mhz oes res g v ce = 520 v, i c = 3 0 a, v ge = 15 v d(on) t j = 25 c ; see figure 1 r d(off) f ( 1 ) e on off d(on) t j = 175 c ; see figure 1 r d(off) f (1) e on off f i f = 0.5 a ( 1 ) energy losses include the reverse recovery of diode.
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 4 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 test circuits and waveforms (a) test circuit ( b ) waveform figure 1 . test circuits and w aveforms of dv/dt and switching time c onditions : v ce = 4 00 v i c = 3 0 a v ge = 15 v r g = 10 l = 100 h 15 v r g i c l clamp diode ( fmxr - 4306 s ) v ce v ge v g e v c e i c 1 0 % 9 0 % 9 0 % 1 0 % t d ( o n ) t r t d ( o f f ) t f d v / d t 9 0 % 1 0 % t t t
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 5 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 rating and characteristic curves figure 2 . igbt reverse bias safe operating area figure 3 . igbt safe operating area figure 4 . power dissipation vs. case temperature figure 5 . collector current vs. case temperature 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector C emitter voltage, v ce (v) 0.1 1 10 100 1000 1 10 100 1000 collector current, i c (a) collector C emitter voltage, v ce (v) 0 20 40 60 80 100 25 50 75 100 125 150 175 power dissipation, p d (w) case temperature, t c ( c ) 0 10 20 30 40 50 25 50 75 100 125 150 175 collector current, i c (a) case temperature, t c ( c ) igbt, s ingle pulse, t j = 175 c t j < 175 c t j < 175 c igbt, s ingle pulse, t j = 25 c 100 s 1 0 s
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 6 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 figure 6 . output characteristics (t j = 25 c ) figure 7 . output characteristics (t j = 17 5 c ) figure 8 . transfer characteristics figure 9 . saturation voltage vs. junction temperature 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 collector current, i c (a) collector C emitter voltage, v ce (v) 0 10 20 30 40 50 60 70 80 90 0 1 2 3 4 5 collector current, i c (a) collector C emitter voltage, v ce (v) 0 10 20 30 40 50 60 70 80 90 0 5 10 15 collector current, i c (a) gate C emitter voltage, v ge (v) 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 150 175 collector - emitter saturation, v ce (sat) (v) junction temperature, t j ( c ) t j = 2 5 c v ge = 20 v v ge = 15 v v ge = 12 v v ge = 10 v v ge = 8 v t j = 17 5 c v ge = 20 v v ge = 15 v v ge = 12 v v ge = 10 v v ge = 8 v v ce = 5 v v g e = 1 5 v t j = 17 5 c t j = 2 5 c i c = 1 20 a i c = 3 0 a i c = 6 0 a
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 7 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 figure 10 . saturation voltage vs. collector current figure 11 . gate threshold voltage vs. junction temperature figure 12 . capacitance characteristics figure 13 . typical gate c harge 0.5 1.0 1.5 2.0 2.5 3.0 0 20 40 60 collector - emitter saturation, v ce (sat) (v) collector current, i c ( a ) 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 150 175 gate threshold voltage (v) at v ce = 10 v , i c = 1 ma junction temperature, t j ( c ) 10 100 1000 10000 0 10 20 30 40 50 capacitance (pf) collector C emitter voltage, v ce (v) 0 10 20 0 20 40 60 gate - emitter voltage, v ge (v) gate charge, q g (nc) v g e = 1 5 v t j = 17 5 c t j = 2 5 c t j = ? 55 c f = 1 mhz, v g e = 0 v i c = 3 0 a c ies c r es c o es v ce 520 v v ce 13 0 v
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 8 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 figure 14 . switching t ime vs. junction temperature figure 15 . switching time vs. collector current figure 16 . switching time vs. gate resistor figure 17 . switching loss vs. junction temperature 10 100 1000 25 50 75 100 125 150 175 switching time (ns) junction temperature, t j ( c ) 1 10 100 1000 1 10 100 switching time (ns) collector current, i c (a) 10 100 1000 10 100 switching time (ns) gate resistor, r g () 0 0.5 1 1.5 2 25 50 75 100 125 150 175 switching loss (mj) junction temperature, t j ( c ) inductive load , i c = 3 0 a, v ce = 400 v, v ge = 15 v, r g = 10 inductive load, v ce = 400 v, v ge = 15 v, r g = 10 , t j = 175 c inductive load, i c = 3 0 a, v ce = 400 v, v ge = 15 v, t j = 175 c inductive load, i c = 3 0 a, v ce = 400 v, v ge = 15 v, r g = 10 t d(on) t d(o ff ) t d(o ff ) t d(on) t f t d(on) t d(o ff ) t f t r e o n e o ff e o n + e off t r t f t r
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 9 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 figure 18 . switching loss vs. collector current figure 19 . switching loss vs. gate resistor figure 20 . switching loss vs. collector C emitter voltage figure 21 . diode forward characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 switching loss (mj) collector current, i c (a) 0 1 2 3 4 10 20 30 40 50 60 70 80 90 100 switching loss (mj) gate resistor, r g () 0 0.5 1 1.5 2 200 250 300 350 400 450 500 switching loss (mj) collector C emitter voltage, v ce (v) 0 0.5 1 1.5 2 0.0 1.0 2.0 3.0 4.0 5.0 forward current, i f (a) forward voltage, v f (v) inductive load, v ce = 400 v, v ge = 15 v, r g = 10 , t j = 175 c inductive load, i c = 3 0 a, v ce = 400 v, v ge = 15 v, t j = 175 c inductive load, i c = 3 0 a, v ge = 15 v, r g = 10 , t j = 175 c e o n + e off e o n + e off e o n + e off e o n e o ff e o n e o ff e o n e o ff t j = 17 5 c t j = ? 55 c t j = 2 5 c
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 10 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 figure 22 . diode forward voltage vs. junction temperature figure 23 . transient thermal resistance 0 1 2 3 4 5 - 50 - 25 0 25 50 75 100 125 150 175 forward voltage, v f (v) junction temperature, t j ( 0.001 0.01 0.1 1 10 thermal resistance ( 1 10 100 1 m 10 m 100 m 1 10 100 i f = 2 .0 a i f = 0.5 a s ingle pulse, v ce < 5 v
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 11 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 physical dimensions to 3p f - 3l notes : - d imensions in millimeters - bare lead frame : pb - free ( rohs compliant) - when soldering the products, b e sure to mi nimize the working time within the following limits: flow: 260 5 c / 10 1 s, 2 times soldering i ron: 380 10 c / 3.5 0.5 s, 1 time (soldering should be at a distance of at l east 1.5 mm from the body of the product s .) - r ecommended s crew t orque : 0.686 n?m to 0.882 n?m (7 kgf?cm to 9 kgf?cm) marking diagram part number ymdd xx fga 653 h lot number : y is the last digit of the year of manufacture ( 0 to 9 ) m is the month of the year ( 1 to 9 , o , n , or d ) dd is the day of the month ( 01 to 31 ) x x is the control number
FGA65A3H FGA65A3H - dse rev. 1 .0 sanken elctric co., ltd. 12 d ec . 2 2 , 2 01 7 http://www.sanken - ele.co.jp /en ? s anken e lectric c o ., l td. 2017 important notes all data, illustrations, graphs , tables and any other information included in this document (the information ) as to sanken s products listed herein (the sanken products) are current as of the date this document is issued . the information is subject to any change without notice due to improvement of the sanken products , etc. please make sure to confirm with a sanken sales representative that the contents set forth in this document reflect the latest revisions before use. the sanken products a re intended for use as components of general purpose electronic equipment or apparatus (such as home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). prior to use of the sanken products, please put your signature, or a ffix your name and seal, on the specification documents of the sanken products and return them to sanken. when considering use of the sanken products for any applications that require high er reliability (such as transportation equipment and its control sys tems, traffic signal control systems or equipment , disaster/crime alarm systems, various safety devices, etc.), you must contact a sanken sales representative to discuss the suitability of such use and put your signature, or affix your name and seal, on th e specification documents of the sanken products and return them to sanken, prior to the use of the sanken products. the sanken products are not intended for use in any applications that require extremely high reliability such as: aerospace equipment; nucl ear power control systems; and medical equipment or systems, whose failure or malfunction may result in death or serious injury to people, i.e., medical devices in class iii or a higher class as defined by relevant laws of jap an (collectively, the specifi c applications). sanken assumes no liability or responsibility whatsoever for any and all damages and losses that may be suffered by you, users or any third party, resulting from the use of the sanken products in the specific applications or in manner not in compliance with the instructions set forth herein. in the event of using the sanken p roducts by either (i) combining other products or materials or both therewith or (ii) physically, chemically or otherwise processing or treating or both the same , you must duly consider all possible risks that may result from all such uses in advance and proceed therewith at your own responsibility. although sanken is making efforts to enhance the quality and reliability of its products, it is impossible to completely a void the occurrence of any failure or defect or both in semiconductor products at a certain rate. you must take, at your own responsibility , preventative measures including using a sufficient safety design and confirming safety of any equipment or systems in/for which the sanken products are used, upon due consideration of a failure occurrence rate and derating, etc., in order not to cause any human injury or death, fire accident or social harm which may result from any failure or malfunction of the sanken products. please refer to the relevant specification documents and sanken s official website in relation to derating. no a nti - radioactive ray design ha s been adopted for the sanken p roducts. the c ircuit constant , operation examples, circuit examples, patte rn layout examples, design examples , recommended examples , all information and evaluation results based thereon, etc., described in this document are presented for the sole purpose of refe rence of use of the sanken products . sanken assume s no responsibilit y whatsoever for any and all damages and losses that may be suffered by you, users or any third party, or any possible infringement of any and all property rights including intellectual property rights and any other rights of you, u sers or any third party , result ing from the information . no information in this document can be transcribed or copied or both without sankens prior written consent. regarding the information, no license, express, implied or otherwise, is granted hereby under any intellectual pro perty rights and any other rights of sanken. unless otherwise agreed in writing between sanken and you, sanken makes no warranty of any kind, whether express or implied, including, without limitation, any warranty (i) as to the quality or performance of th e sanken products (such as implied warranty of merchantability, and implied warranty of fitness for a particular purpose or special environment), (ii) that any sanken product is delivered free of claims of third parties by way of infringement or the like, (iii) that may arise from course of performance, course of dealing or usage of trade, and (iv) as to the information (includ ing its accuracy, usefulness, and reliability). in the event of using the sanken products, you must use the same after carefully exa mining all applicable environmental laws and regulations that regulate the inclusion or use or both of any particular controlled substances, including , but not limi ted to , the eu rohs directive , so as to be in strict compliance with such applicable laws and regulations . you must not use the sanken products or the information for the purpose of any military applications or use, including but not limited to the development of weapons of mass destruction. in the event of exporting the s anken products or the information , or providing them for non - residents, you must comply with all applicable export control laws and regulations in each country including the u.s. export administration regulations (ear) and the foreign exchange and foreign trade act of japan , and follow the procedures required by such applicable laws and regulations. sanken assumes no responsibility for any troubles, which may occur during the transportation of the sanken products including the falling thereof, out of sanken s distribution network. although sanken has prepared this document with its due care to pursue the accuracy thereof, sanken does not warrant that it is error free and sanken assumes no liability whatsoever for any and all damages and losses which may be s uffered by you resulting from any possible error s or omissions in connection with the information . please refer to our official website in relation to general instructions and directions for us ing the sanken products , and refer to the relevant specificatio n documents in relation to particular precautions when using the sanken products. all rights and title in and to any specific trademark or tradename belong to sanken and such original right holder(s). dsgn - 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