advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching characteristic r ds(on) 0.6 simple drive requirement i d 10a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 drain current, v gs @ 10v a i d @t c =100 drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 4 w e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 0.72 /w rthj-a 40 /w data & specifications subject to change without not ice 10 40 174 10 6.5 50 -55 to 150 parameter ap3990s-hf + 30 rating 600 halogen-free product storage temperature range -55 to 150 parameter maximum thermal resistance, junction-ambient (pcb m ount) 4 3.13 201501292 1 g d s g d s to-263(s) ap3990 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =5a - - 0.6 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4.5 v g fs forward transconductance v ds =10v, i d =5a - 5 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =10a - 34 57 nc q gs gate-source charge v ds =480v - 11 - nc q gd gate-drain ("miller") charge v gs =10v - 11 - nc t d(on) turn-on delay time v dd =300v - 19 - ns t r rise time i d =10a - 28 - ns t d(off) turn-off delay time r g =10 - 43 - ns t f fall time v gs =10v - 22 - ns c iss input capacitance v gs =0v - 2030 3250 pf c oss output capacitance v ds =25v - 225 - pf c rss reverse transfer capacitance f=1.0mhz - 9 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =10a, v gs =0v - - 1.5 v t rr reverse recovery time i s =10a, v gs =0 v , - 600 - ns q rr reverse recovery charge di/dt=100a/s - 12 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1.0mh , r g =25 , i as =10a. 3.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap3990s-hf 4.surface mounted on 1 in 2 copper pad of fr4 board
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-r esistance temperature v.s. junction temper ature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 ap3990s-hf 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 4 8 12 16 20 0 5 10 15 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v v g =5.0v 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v g =10v 0 2 4 6 8 10 12 0 4 8 12 16 20 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6 .0v v g =5 0v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
ap3990s-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 2 4 6 8 10 12 0 20 40 60 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =480v 0 800 1600 2400 3200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
ap3990s-hf marking information 5 part number package code date code (ywwsss) y last digit of the year ww week sss sequence 3990s ywwsss
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