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  1. general description the TFF1024HN is an integrated downconver ter for use in low noise block (lnb) convertors in a 10.70 ghz to 12.85 ghz k u band satellite re ceiver system. 2. features and benefits ? low current consumption integrated pre-amplifier, mixer, buffer amplifier and pll synthesizer ? flat gain over frequency ? single 5 v supply pin ? low cost 25 mhz crystal ? crystal controlled lo frequency generation ? switched lo frequency (selectable to 9.75 ghz, 10.00 ghz, 10.25 ghz, 10.55 ghz, 10.60 ghz, 10.75 ghz, 11.25 ghz or 11.30 ghz) with a 25 mhz crystal as reference ? other lo frequencies within the 9.75 ghz to 11.30 ghz range can be realized by using an alternative reference frequency ? low phase noise ? low spurious ? low external component count ? alignment-free concept ? esd protection on all pins 3. applications ? k u band lnb converters for vsat and di gital satellite recept ion (dvb-s / dvb-s2) 4. quick reference data TFF1024HN integrated mixer oscilla tor pll for satellite lnb rev. 1 ? 13 january 2015 product data sheet ' + 9 4 ) 1   table 1. quick reference data 9.75 ghz ? f lo ? 11.30 ghz; operating conditions of table 6 apply. symbol parameter conditions min typ max unit v cc supply voltage rf input and if output ac coupled [1] 4.5 5 5.5 v i cc supply current rf input and if output ac coupled [1] -5670ma nf ssb single sideband noise figure f if = 1450 mhz; t amb = 25 ?c; 10.55 ghz ? f lo ? 10.60 ghz -9.011.0db f rf rf frequency [2] 10.70 - 12.85 ghz
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 2 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb [1] dc values. [2] see table 4 for specific values at certain settings of pins hb0, hb1 and hb2. 5. ordering information 6. functional diagram g conv conversion gain f if = 1450 mhz f lo = 10.55 ghz 29.8 34.3 38.8 db f lo = 10.60 ghz 29.8 34.3 38.8 db s 11 input reflection coefficient 10.70 ghz ? f rf ? 12.85 ghz - ? 10 - db s 22 output reflection coefficient 950 mhz ? f if ? 2150 mhz; z 0 =75 ? - ? 10 - db ip3 o output third-order intercept point carrier power = ? 10 dbm (measured at output) f if = 1450 mhz; 9.75 ghz ? f lo ? 10.75 ghz 14 18 - dbm f if = 1250 mhz; 11.25 ghz ? f lo ? 11.30 ghz 14 18 - dbm table 1. quick reference data ?continued 9.75 ghz ? f lo ? 11.30 ghz; operating conditions of table 6 apply. symbol parameter conditions min typ max unit table 2. ordering information type number package name description version TFF1024HN dhvqfn16 plastic dual in-line compatible thermal enhanced very thin quad flat package; no leads;16 terminals; body 2.5 ? 3.5 ? 0.85 mm sot763-1 fig 1. functional diagram 3// +% ;2 ;2 5) 9 && ,) +% +% *+]wr *+] ddd
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 3 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 7. pinning information 7.1 pinning 7.2 pin description [1] the distance between the outer edges of pin 2 and pin 3 is 740 ? m. this gives an optimum transition from a 1.1 mm wide, z 0 = 50 ? line to the TFF1024HN on a rogers ro4223 printed-circ uit board (pcb) material of 0.5 mm height. fig 2. pin configuration ddd qf +% +% ;2 5)b*1' ;2 5) +% qf ,) 5)b*1' ,)b*1' /) 95(* 5)b* 1' 9 && 7udqvsduhqwwrsylhz                 whuplqdo lqgh[duhd table 3. pin description symbol pin description gnd 0 ground (exposed die pad) rf_gnd3 1 rf ground. connect this pin to the exposed die pad landing. rf_gnd1 2 rf ground. connect this pin to the expo sed die pad landing and the rf input cpw line. n.c. 3 not connected. connect to rf on pcb. [1] rf 4 rf input. rf_gnd2 5 rf ground. connect this pin to the expo sed die pad landing and the rf input cpw line. hb0 6 lo frequency selection, lsb. connect this pi n to gnd for "0", leave open for "1". also see table 4 . n.c. 7 not connected. use this pin to route the gro und layer on top of the pcb to the exposed die pad. lf 8 loop filter pll. connect loop filter between this pin and vreg (pin 9). vreg 9 regulated output voltage for pll loop filter. connect loop filter to this pin. decouple against die pad via pin 7. hb2 10 lo frequency selection, msb. connect this pi n to gnd for "0", leave open for "1". also see ta b l e 4 . xo2 11 crystal connection 2. connect crystal between this pin and xo1 (pin 12). xo1 12 crystal connection 1. connect crystal between this pin and xo2 (pin 11). hb1 13 lo frequency selection. connect this pin to gnd for "0", leave open for "1". also see ta b l e 4 . if 14 if output if_gnd 15 if output ground. connect this pin to the exposed die pad landing and the output transmission line ground. v cc 16 supply voltage
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 4 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 8. functional description 8.1 lo frequency selection [1] for frequencies that cannot be achieved using the 25 mhz crystal choose the closest fr equency and adapt the crystal frequenc y. example: 10.45 ghz. this can be achieved by choosing 10.55 ghz. the divider ratio is 422. 10.45 ghz will be achieved with a cry stal frequency of 10.45 ghz / 422 = 24.76303 mhz. 9. limiting values 10. recommended operating conditions table 4. lo frequency selection table see figure 1 for the functional diagram. f lo f xtal hb2 hb1 hb0 f rf (ghz) f if (mhz) (ghz) (mhz) (pin 10) (pin 13) (pin 6) min max min max 9.75 25 0 0 0 10.70 11.90 950 2150 10.00 25 0 0 1 10.95 12.15 950 2150 10.25 25 0 1 0 11.20 12.40 950 2150 10.45 [1] 24.76 0 1 1 11.40 12.60 950 2150 10.55 25 0 1 1 11.50 12.70 950 2150 10.60 25 1 0 0 11.55 12.75 950 2150 10.75 25 1 0 1 11.70 12.85 950 2100 11.25 25 1 1 0 12.20 12.85 950 1600 11.30 25 1 1 1 12.25 12.85 950 1550 table 5. limiting values in accordance with the absolute ma ximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage ? 0.5 +6 v v i input voltage on pin hb0 ? 0.5 +6 v on pin hb1 ? 0.5 +6 v on pin hb2 ? 0.5 +6 v t stg storage temperature ? 40 +125 ?c table 6. operating conditions symbol parameter conditions min typ max unit v cc supply voltage rf input and if output ac coupled [1] 4.5 5 5.5 v v i input voltage on pin hb0 0 - 2.7 v on pin hb1 0 - 2.7 v on pin hb2 0 - 2.7 v i cc(startup) start-up supply current during 30 ms only at supply power-on 300 - - ma t amb ambient temperature ? 40 +25 +85 ?c z 0 characteristic impedance - 50 - ? f rf rf frequency [2] 10.70 - 12.85 ghz
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 5 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb [1] dc values. [2] see table 4 for specific values at certain settings of pins hb0, hb1 and hb2. [3] the minimum lo frequency is specified. see table 4 for other specific values at certain settings of pins hb0, hb1 and hb2. [4] the maximum lo frequency is specified. see table 4 for other specific values at certain settings of pins hb0, hb1 and hb2. 11. thermal characteristics 12. characteristics f lo lo frequency hb2 = 0; hb1 = 0; hb0 = 0 [3] -9.75-ghz hb2 = 1; hb1 = 1; hb0 = 1 [4] - 11.30 - ghz f if if frequency [2] 950 - 2150 mhz c l(xtal) crystal load capacitance - 10 - pf esr equivalent series resistance - - 40 ? f xtal crystal frequency - 25 - mhz table 6. operating conditions ?continued symbol parameter conditions min typ max unit table 7. thermal characteristics symbol parameter conditions typ unit r th(j-c) thermal resistance from junction to case 35 k/w table 8. characteristics 9.75 ghz ? f lo ? 11.30 ghz; operating conditions of table 6 apply. symbol parameter conditions min typ max unit i cc supply current rf input and if output ac coupled [1] - 5670ma ? n ? (itg)rms rms integrated phase noise density loop bandwidth = crossover bandwidth; low esr crystal used (esr < 20 ? ) integration offset frequency = 1 khz to 1 mhz - 1.2 2.2 deg integration offset frequency = 10 khz to 13 mhz - 1.2 2.2 deg nf ssb single sideband noise figure f if = 1450 mhz; t amb = 25 ? c f lo = 9.75 ghz - 8.8 10.8 db 10.55 ghz ? f lo ? 10.60 ghz - 9.0 11.0 db f if = 1250 mhz; t amb = 25 ? c 11.25 ghz ? f lo ? 11.30 ghz - 9.5 11.5 db g conv conversion gain f if = 1450 mhz f lo = 9.75 ghz 29.6 34.1 38.6 db f lo = 10.00 ghz 29.5 34.0 38.5 db f lo = 10.25 ghz 29.5 34.0 38.5 db f lo = 10.55 ghz 29.8 34.3 38.8 db f lo = 10.60 ghz 29.8 34.3 38.8 db f lo = 10.75 ghz 30.2 34.7 39.2 db f if = 1250 mhz f lo = 11.25 ghz 30.2 34.7 39.2 db f lo = 11.30 ghz 30.1 34.6 39.1 db
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 6 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb [1] dc values. [2] see table 4 for the corresponding f if ranges. ? g conv / ? f conversion gain variation with frequency over if band; ? 40 ?c ? t amb ? +85 ?c; v cc = 5.0 v f lo = 9.75 ghz [2] --2.5db f lo = 10.00 ghz [2] --3.0db f lo = 10.25 ghz [2] --3.6db f lo = 10.55 ghz [2] --4.0db f lo = 10.60 ghz [2] --4.0db f lo = 10.75 ghz [2] --4.0db f lo = 11.25 ghz [2] --3.0db f lo = 11.30 ghz [2] --3.0db in every 36 mhz band; ? 40 ?c ? t amb ? +85 ?c; v cc = 5.0 v --0.6db s 11 input reflection coefficient 10.70 ghz ? f rf ? 12.85 ghz - ? 10 - db s 22 output reflection coefficient 950 mhz ? f if ? 2150 mhz; z 0 =75 ? - ? 10 - db ip3 o output third-order intercept point carrier power is ? 10 dbm (measured at the output) f if = 1450 mhz; 9.75 ghz ? f lo ? 10.75 ghz 14 18 - dbm f if = 1250 mhz; 11.25 ghz ? f lo ? 11.30 ghz 14 18 - dbm p l(1db) output power at 1 db gain compression measured at the output f if = 1450 mhz; 9.75 ghz ? f lo ? 10.75 ghz 2 6 - dbm f if = 1250 mhz; 11.25 ghz ? f lo ? 11.30 ghz 2 6 - dbm ? l(rf)lo local oscillator rf leakage f c =f lo ; span = 100 mhz; rbw = 50 khz; vbw = 200 khz --? 35 dbm v il low-level input voltage on pin hb0 - - 0.8 v on pin hb1 - - 0.8 v on pin hb2 - - 0.8 v v ih high-level input voltage on pin hb0 1.6 - 2.7 v on pin hb1 1.6 - 2.7 v on pin hb2 1.6 - 2.7 v r pu pull-up resistance on pin hb0 80 110 140 k ? on pin hb1 80 110 140 k ? on pin hb2 80 110 140 k ? table 8. characteristics ?continued 9.75 ghz ? f lo ? 11.30 ghz; operating conditions of table 6 apply. symbol parameter conditions min typ max unit
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 7 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 12.1 graphs v cc =5v; f if = 1550 mhz. (1) f lo = 9.75 ghz (2) f lo = 10.60 ghz (3) f lo = 11.30 ghz v cc =5v. (1) f lo = 9.75 ghz (2) f lo = 11.30 ghz fig 3. conversion gain as a function of ambient temperature; typical values fig 4. local oscillator rf leakage as a function of ambient temperature; typical values v cc =5v; f lo = 10.55 ghz. v cc =5v; t amb = 25 ? c. (1) f lo = 9.75 ghz (2) f lo = 10.60 ghz (3) f lo = 11.30 ghz fig 5. rms integrated phase noise density as a function of ambient temperature; typical values fig 6. phase noise as a function of offset frequency; typical values ddd              7 dpe  ?& * frqy frqy * frqy g% g% g%          ddd               7 dpe  ?& . / 5) or / 5) or . / 5) or g%p g%p g%p       ddd              7 dpe  ?& 3 q lwj 506 q lwj 506 3 q lwj 506 ghj ghj ghj ddd                i riivhw  0+] 3 q 3 q g%f+] g%f+] g%f+]         
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 8 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb v cc =5v. (1) f lo = 9.75 ghz (2) f lo = 10.60 ghz (3) f lo = 11.30 ghz fig 7. conversion gain as a function of rf frequency; typical values (1) f rf = 10.70 ghz (2) f rf = 12.75 ghz fig 8. input reflecti on coefficient (s 11 ); typical values ddd             i 5)  *+] * frqy frqy * frqy g% g% g%                             ? ddd      
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 9 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb (1) f if = 250 mhz (2) f if = 2150 mhz fig 9. output reflection coefficient (s 22 ); typical values v cc =5v. (1) f lo = 9.75 ghz (2) f lo = 10.60 ghz (3) f lo = 11.30 ghz fig 10. noise figure as function of rf frequency; typical values                    ? ddd       ddd              i 5)  *+] 1) 1) 1) g% g% g%         
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 10 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 13. application information fig 11. application diagram of TFF1024HN 9/,1($5 5(*8/$725 9a9 9 s+(07eldv 97ghwhfwru +% ' * '9 *9 5)b*1' ,)b*1' ,) +% ;2 0+] fu\vwdo , ) ;2 +% 5)b*1' /) 95(* 9 && qf               '+ *+ ddd +% +% *+ + 9 '+ *9 '9 * ' 5) 5)b*1' +% qf q) s) q+ q+ s) +% +% +% table 9. list of netnames see figure 11 . netname description gh gate voltage of 1st stage lna. horizontal polarization dh drain voltage of 1st stage lna. horizontal polarization gv gate voltage of 1st stage lna. vertical polarization dv drain voltage of 1st stage lna. vertical polarization g2 gate voltage of 2nd stage lna d2 drain voltage of 2nd stage lna hb0 lo frequency selection, lsb hb1 lo frequency selection hb2 lo frequency selection, msb
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 11 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb fig 12. lnb system block diagram with TFF1024HN 6833/<$1' %$1'32/$5,=$7,216:,7&+,1* 9 5(*8/$725 9 && +% 5)jdlq lpdjh uhmhfwilowhu krul]rqwdo srodul]dwlrq yhuwlfdo srodul]dwlrq pl[hu o)jdlq +% +% 3// *+]*+] vw67$*(/1$ vw67$*(/1$ qg67$*(/1$ ddd
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 12 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 14. package outline fig 13. package outline sot763-1 whuplqdo lqgh[duhd   $  ( k e 81,7 \ h  f 5()(5(1&(6 287/,1( 9(56,21 (8523($1 352-(&7,21 ,668('$7( ,(& -('(& -(,7$ pp   ' k   \      h         ',0(16,216 ppduhwkhruljlqdoglphqvlrqv  627 02     /  y  z   pp vfdoh 627 '+94)1sodvwlfgxdolqolqhfrp sdwleohwkhupdohqkdqfhgyhu\ wklqtxdgiodwsdfndjhqrohdgv whuplqdoverg\[[pp $   pd[ $ $  f ghwdlo; \ \  & h / ( k ' k h h  e         ; ' ( & % $ whuplqdo lqgh[duhd $ & & % y 0 z 0 (   1rwh 3odvwlfruphwdosurwuxvlrqvripppd[lpxpshuvlghdu hqrwlqfoxghg '     
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 13 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 15. abbreviations 16. revision history table 10. abbreviations acronym description cpw coplanar waveguide dvb-s digital video broadcasting by satellite dvb-s2 digital video broadcasting - satellite - second generation esd electrostatic discharge if intermediate frequency k u band k-under band lna low-noise amplifier lnb low-noise block lo local oscillator lsb least significant bit msb most significant bit phemt pseudomorphic high electron mobility transistor pll phase-locked loop rbw resolution bandwidth vsat very small aperture terminal v/t voltage / tone vbw video bandwidth table 11. revision history document id release date data sheet status change notice supersedes TFF1024HN v.1 20150113 product data sheet - -
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 14 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 17.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 17.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
TFF1024HN all information provided in this document is subject to legal disclaimers. ? nxp semiconductors n.v. 2015. all rights r eserved. product data sheet rev. 1 ? 13 january 2015 15 of 16 nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully in demnifies nxp semi conductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 17.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 18. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors TFF1024HN integrated mixer oscillato r pll for satellite lnb ? nxp semiconductors n.v. 2015. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 13 january 2015 document identifier: TFF1024HN please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 1 5 ordering information . . . . . . . . . . . . . . . . . . . . . 2 6 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 3 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 8 functional description . . . . . . . . . . . . . . . . . . . 4 8.1 lo frequency selection . . . . . . . . . . . . . . . . . . . 4 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 10 recommended operating conditions. . . . . . . . 4 11 thermal characteristics . . . . . . . . . . . . . . . . . . 5 12 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 12.1 graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 13 application information. . . . . . . . . . . . . . . . . . 10 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16 revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 17 legal information. . . . . . . . . . . . . . . . . . . . . . . 14 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 14 17.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 17.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15 18 contact information. . . . . . . . . . . . . . . . . . . . . 15 19 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16


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