data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 KBJ6005G thru kbj610g 6.0a glass passivated bridge rectifier fe a t ures ?e glass pa ssiv a ted die con s truction ?e high ca se diele c tric s t reng th of 150 0vrms ?e l o w re v e rse le akage curren t ?e surge ov erload rating to 170a pea k ?e ideal for prin ted circui t boa r d a ppli c ati ons ?e plasti c ma terial - ul flammability classi fi cati on 9 4 v- 0 ?e ul li sted under recogni zed comp onent ind e x , file number e 9466 1 ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a se : m o lde d pl asti c ?e termina l s: plate d lead s, sol derabl e per mil-std-202, me thod 208 ?e polari ty : molded on body ?e mou n ting : throu gh hole for #6 s c re w ?e m o un t i n g t o r q u e : 5. 0 i n - l bs m a xi m u m ?e approx . w e igh t : 4.6 grams ?e mar k ing : ty pe number maximu m ra tin g s an d electric a l charac teristic s @ t a = 25 x c unless ot her w ise speci fied kbj d i m m i n ma x a 2 4 . 8 0 2 5 . 2 0 b 1 4 . 7 0 1 5 . 3 0 c 400 nominal d 1 7 . 2 0 1 7 . 8 0 e 0 . 9 0 1 . 1 0 g 7 . 3 0 7 . 7 0 h 3.10 r 3 . 4 0 r j 3 . 3 0 3 . 7 0 k 1 . 9 0 2 . 1 0 l 9 . 3 0 9 . 7 0 m 2 . 5 0 2 . 9 0 n 3 . 4 0 3 . 8 0 p 4 . 4 0 4 . 8 0 r 0 . 6 0 0 . 8 0 a ll d i men s io n s in mm single p hase , hal f w a v e , 60hz, re sisti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20%. characterist i c s y m bol kbj 6005g kbj 601g kbj 602g kbj 604g kbj 606g kbj 608g kbj 610g uni t peak repeti t iv e rev e rse volta ge w o r k ing pea k rev e rse vol t age dc blocking vol t ag e vrrm vr w m vr 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 v rms rev e rse voltage vr(rms) 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v av erage recti f ied outpu t cur r ent @ tc = 100 x c i o 6 . 0 a non-repetitiv e peak forw ard sur ge c u rrent, 8.3 ms singl e half- sine-w a v e superimposed on ra ted load (jedec me thod) i f s m 1 7 0 a forw ard voltage pe r elemen t @ if = 6 . 0a v f m 1 . 0 v peak rev e rse curr ent @tc = 25 x c at ra ted dc blo cki ng vol t age @ tc = 125 x c ir m 5.0 500 g a i2t rati ng for fusin g (t < 8.3m s) (note 3) i 2 t 1 2 0 a 2 s t y pical jun c tio n ca paci t ance pe r el ement (note 1) cj 80 pf t y pical thermal re sistan ce (note 2) r c ja 1.5 j /w operati ng an d s t or age tempera t ure range tj, tstg - 55 to +150 j notes: 1. measured at 1 . 0 mh z and ap plied rev e rse v o ltage of 4 . 0v dc. 2. thermal re si sta n c e from jun c tio n to case pe r eleme n t. unit moun ted on 75 x 75 x 1.6mm alum inum pla t e h eat sin k . 3. non- repe titiv e , fo r t > 1m s and < 8 . 3 m s. _ a b d j k c e g h l m n p r kbj( mm)
http://www.yeashin.com 2 rev.02 20120305 KBJ6005G thru kbj610g device characteristics 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 1.8 v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f i , instantaneous for ward current (a) f t = 150c j t = 25c j pulse width = 300s 0 40 80 120 160 180 1 10 100 i , peak fwd surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive sur g e current t = 150c j single half-sine-wave (jedec method) 10 100 1000 0.1 1.0 10 100 c , junction cap acitance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r f = 1mhz t = 25c j 0.1 1.0 10 100 1000 02040 6080 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics t = 150c j t = 125c j t = 100c j t = 25c j 0 1 2 3 4 5 6 25 50 75 100 125 150 i , average rectified current (a) o t , case temperature (c) fi g . 1 forward current deratin g curve c with heatsink without heatsink resistive or inductive load
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