sy m b ol un it m a x i m u m r epe t i t i v e p ea k r e v e r s e v o l t age v rrm 200 v m a x i m u m w o r k i n g r e v e r s e v o l t age v r wm 200 v m a x i m u m dc b l o ck i n g v o l t age v dc 200 v m a x i m u m a v e r age f o r w a r d c u rr e n t 8 . 0 ( p e r l eg ) t o t a l d e v i c e , ( r a t ed v r ) , t c = 150 c 16 ( t o t a l d e v i c e) m a x i m u m p ea k r e c t i f i ed f o r w a r d c u rr e nt ( r a t ed v r , s q u a r e w a v e , 20 k h z ) t c = 150 c m a x i m u m n o n -r epe t i t i v e p ea k f o r w a r d s u r ge c u rr e nt ( h a l f w a v e , s i n g l e p h a s e , 60 h z ) p e r l eg m a x i m u m f o r w a r d v o l t age a t i f = 8 a , t c = 25 c v f 0 . 975 ( 1) v m a x i m u m i n s t a n t a n eo u s r e v e r s e c u rr e n t ( 1) i r 5 ( t c = 25 c) m a ( r a t ed d c v o l t age) i r ( h) 250 ( t c = 150 c) m a m a x i m u m r e v e r s e r e c o v e r y t i me (i f = 0 . 5 a , i r = 1 a ; i rr = 0 . 25 a) m a x i m u m t h e r m a l r e s i s t a n c e , j un c t i o n t o c a se r jc 3 .0 c /w j un c t i o n t e m pe r a t u r e r a n ge t j - 65 t o + 175 c s t o r age t e m pe r a t u r e r a n ge t s tg - 65 t o + 175 c n o t e : ( 1 ) p ul s e t e s t : p ul s e w id t h = 300 m s du t y c yc l e 2 0 % 100 a a t rr 25~35 ns i f sm ra t i ng a i f ( av) i f rm 16 maximum ratings and electrical characteristics for capacitive load, derate current by 20%. single phase, half wave, 60hz, resistive or inductive load. rating at 25 o c ambient temperature unless otherwise specified. ? ESAD33-02C/esad33-02n pb free plating product ESAD33-02C/esad33-02n pb 16 ampere heatsink unipolar ultra fast recovery half bridge rectifiers ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/2 rev.05 ESAD33-02C/esad33-02n features low forward voltage drop latest gpp technology with super fast recovery time glass passivated with high current capability case: heatsink to-3p/to-247ad high surge current capability weight: 5.6 gram approximately polarity: as marked on diode body method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current epoxy: ul 94v-0 rate flame retardant unit : inch (mm) application automotive inverters/solar inverters plating power supply,smps,motor control and ups car audio amplifiers and sound device systems to-247ad/to-3p 0.640(16.25) 0.620(15.75) 0.142(3.60) 0.125(3.20) 0.087(2.20) 0.070(1.80) 0.126(3.20) 0.110(2.80) 0.050(1.25) 0.045(1.15) 0.225(5.70) 0.204(5.20) 0.225(5.70) 0.204(5.20) 0.600(15.25) 0.580(14.75) 0.839(21.30) 0.819(20.80) 0.170(4.30) 0.145(3.70) 0.798(20.25) 0.777(19.75) 0.199(5.05) 0.175(4.45) 0.095(2.40) 0.030(0.75) 0.017(0.45) positive negative doubler common cathode case case case common anode suffix "c" tandem polarity case series connection tandem polarity suffix "n" suffix "d" suffix "s"
r a t i n g a nd ch a r a c t e r i s t i c cur ves ( ESAD33-02C/esad33-02n ) f i g . 1 - r eve r se r e c o ve r y t i m e ch a r a c t e r i s t i c a nd t es t c i rcu i t d i a g r am + n o t es : 1 . r i s e t i m e = 7 n s m a x ., i npu t i m p e d a n c e = 1 m e g ao h m , 22 p f. 2 . r i s e t i m e = 10 n s m a x ., s o u r c e i m p e d a n c e = 50 o h m s. 3 . a ll r e s i s t o r s = n o n - i ndu c t i v e t y p e s. f i g . 2 - curr e n t d e r a t i n g c a se, p e r l eg f i g . 3 - p o w e r d i ss p a t i o n , p e r l eg 140 145 150 155 160 165 170 175 0 1 2 3 4 5 6 7 8 9 c ase t e m pe r a t ur e, ( c) ave r a g e f o r w a rd curr e n t ( a m ps) f i g . 4 - t ypi c a l f o r w a rd v o l t a g e, p e r l eg f i g . 5 - t ypi c a l r eve r se curr e n t , p e r l eg 8 6 4 2 12 10 8 0 10 0 6 4 2 100 80 10 0 .01 0 .1 100 140 0 20 40 60 120 r eve r se v o l t a g e, v o l ts a v e r a g e p o w e r d i s s i p a t i o n ( w a t t s ) a v e r a g e f o r w a r d o u t p u t c u r r e n t , a m p e r e s f o r w a r d c u r r e n t , a m p e r e s r e v e r s e c u r r e n t , m i c r o a m p e r e s t j = 25 c 1 .0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4 1 .6 f o r w a rd v o l t a g e, v o l ts 0 .1 se t t i m e base f o r 15 / 25 n s / cm t rr + 0 . 5 0 - 0 . 25 - 1 . 0 a 1 50 v dc ( a pp r o x) o s c i ll o s c o pe ( n o t e 1 ) 1 w 50 w 10 w d . u . t. p u l se g e n e r a t or ( n o t e 2 ) r a t e d v r a pp l i ed dc s qu a r e w a ve t j = 25 c 1 100 t j = 100 c t j = 175 c 10 dc s qu a r e w a ve t j = 175 c ? ESAD33-02C/esad33-02n ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/2 rev.05
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