dm t4011lfg document number: d s 37919 rev. 3 - 2 1 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) max i d max t c = + 25c 4 0v 1 1.5 m ? @ v gs = 10 v 30 a 17 .8 m ? @ v gs = 4 .5v 2 4 a description and applications this mosfet is designed to minimize the on - state re sistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high - efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C e nsures o n s tate l osses a re m inimized ? excellent q gd x r ds (on ) product (fom) ? a dvanced t echnology for dc - dc c onvert er s ? small f orm f actor t hermally e fficient p ackage e nables h igher d ensity e nd p roducts ? 100% uis (avalanche) r ated ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) mechanical data ? case: powe rdi3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal finish - matte tin annealed over copper leadframe . solderable per mil - s td - 202, method 208 ? weight: 0.008 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmt 4011 lfg - 7 powerdi3333 - 8 2 , 000 /tape & reel dmt 4011 lfg - 13 powerdi3333 - 8 3 , 000 /tape & re el note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "g reen" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our websi te at http://www.diodes.com/products/packages.html . marking information powerdi3333 - 8 top view internal schematic t41 = product type marking code yyww = date code marking yy = last two digit s of year (ex: 1 6 = 201 6 ) ww = week code (01 to 53) bottom view top view powerdi3333 - 8 t41 y yww d s g 1 2 3 4 8 7 6 5 equivalent circuit powerdi is a registered trademark o f diodes incorporated. s s s g d d d d pin 1
dm t4011lfg document number: d s 37919 rev. 3 - 2 2 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 4 0 v gate - source voltage v gss + 20 - 16 v continuous drain current (note 5 ) v gs = 10 v t c = + 25 ? c = + 70 ? d 30 24 a continuous drain current (note 5 ) v gs = 10 v t a = + 25 ? a = + 70 ? d 10.8 8.6 a maximum continuous body diode f orward current (note 5 ) i s 2.1 a pulsed drain current ( 10 s p ulse, d uty c ycle = 1% ) i dm 65 a avalanche current , l=0. 3mh i a s 11.9 a avalanche energy , l=0.3mh e a s 21.4 mj thermal characteristics characteristic symbol value unit total power dissipation (note 5 ) t a = + 25 c p d 2 w thermal resistance, junction to ambient (note 5 ) r ? j a 62 c/w total power dissipatio n (note 5 ) t c = + 25c p d 15.6 w thermal resistance, junction to case (note 5 ) r ? j c 8 c/w operating and storage temperature range t j, t stg - 55 to + 150 c electrical characteristics ( t a = + 25c , unless otherwise specified .) characteristic symb ol min typ max unit test condition off characteristics (note 6 ) drain - source breakdown voltage bv dss 4 0 - - v v gs = 0v, i d = 1m a zero gate voltage drain current i dss - - 1 ds = 32 v, v gs = 0v gate - source leakage i gss - - 100 - 100 n a v gs = + 2 0 v, v ds = 0v v gs = - 16 v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs (th) 1 - 3 v v ds = v gs , i d = 250 a ds (on) - 9.2 1 1.5 m ? gs = 10 v, i d = 20 a - 13.4 17 .8 v gs = 4 .5v, i d = 20 a diode forward voltage v sd - - 1 .2 v v gs = 0v, i s = 2 0 a dynamic characteristics (note 7 ) input capacitance c iss - 767 - pf v ds = 20 v, v gs = 0v , f = 1 mhz output capacitance c oss - 238 - reverse transfer capacitance c rss - 30.6 - gate r esistance r g - 1 - ? ds = 0 v, v gs = 0v , f = 1 mhz total gate charge ( v gs = 4.5 v ) q g - 7 - nc v ds = 20 v, i d = 20 a total gate charge ( v gs = 10 v ) q g - 15.1 - gate - source charge q gs - 2.1 - gate - drain charge q gd - 3.2 - turn - on delay time t d( on ) - 3.5 - ns v dd = 20 v, v gs = 10 v, r g = 1.6 d = 20 a turn - on rise time t r - 5.8 - turn - off delay time t d( off ) - 9.6 - turn - off fall time t f - 2 - body diode reverse recovery time t rr - 9.8 - ns i f = 15 a , d i /d t = 4 00a/ rr - 5.1 - nc notes: 5 . r ? ja is determined with the device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper pad layout . r ? jc is guaranteed by design while r ? ja is determined by the users board design. 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to product testing.
dm t4011lfg document number: d s 37919 rev. 3 - 2 3 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG 0 5 10 15 20 25 30 1.5 2 2.5 3 3.5 i , d r a i n c u r r e n t ( a ) d v , gate - source voltage (v) gs figure 2 typical transfer characteristics v = 5.0v ds t = 85 c a ? t = 125 c a ? t = 150 c a ? t = 25 c a ? t = - 55 c a ? i d , drain current (a) 0.006 0.008 0.01 0.012 0.014 0.016 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 5 typical on - resistance vs. drain current and junction temperature v = 10v gs t = 150 c j ? t = 125 c j ? t = 85 c j ? t = 25 c j ? t = - 5 5 c j ? r ds(on) , drain - source on - resistance ( ? 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 1 typical output characteristics v = 3.0v gs v = 2.8v gs v = 4.0v gs v = 4.5v gs v = 3.5v gs v = 6.0v gs v = 10.0v gs 0.005 0.007 0.009 0.011 0.013 0.015 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = 4.5v gs v = 10v gs 0 0.02 0.04 0.06 0 4 8 12 16 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical transfer characteristics i = 20a d 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e d s ( o n ) ( n o r m a l i z e d ) t , junction temperature ( c) j ? figure 6 on-resistance variation with junction temperature v = 4.5v gs i = 20a d v = 10v gs i = 20a d
dm t4011lfg document number: d s 37919 rev. 3 - 2 4 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) t , junction tempera ture (c) j figure 8 gate threshold variation vs. junction temperature i = 1ma d i = 250a d v gs(th) , gate threshold voltage (v) v gs =0v 0 0.005 0.01 0.015 0.02 0.025 -50 -25 0 25 50 75 100 125 150 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with junction temperature v = 4.5v gs i = 20a d v = 10v gs i = 20a d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = 85c a t = -55c a t = 25c a t = 150c a t = 125c a 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 10 typical junction capacitance c iss c oss c rss 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 11 gate charge v = 20v ds i = 20a d 0.01 0.1 1 10 100 0.01 0.1 1 10 100 r ds(on) limited p = 10s w p = 100s w dc p = 1s w p = 100ms w p = 10ms w p = 1ms w t = 150c j (m ax ) t = 25c c v = 10v gs single pulse dut on 1 * mrp board i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm t4011lfg document number: d s 37919 rev. 3 - 2 5 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance r (t) = r(t) * r ? ? ja ja r = 133c/w ? ja duty cycle, d = t1/ t2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d = 0.9 r(t), transient thermal resistance
dm t4011lfg document number: d s 37919 rev. 3 - 2 6 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. powerdi 3333 - 8 powerdi3333 - 8 dim min ma x typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 0.15 0.25 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e3 0.79 0.89 0.84 e4 1.60 1.70 1.65 e ? ? ? ? 0.65 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. powerdi 3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) 1 8 e3 e4 x3 y3 x y c y1 y2 x1 x2 1 8
dm t4011lfg document number: d s 37919 rev. 3 - 2 7 of 7 www.diodes.com october 2016 ? diodes incorporated DMT4011LFG diodes incorporated makes no warranty of any kind, ex press or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsid iaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the applicat ion or use of this document or any product described herein; neither does diodes incorporated convey any license under its pa tent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such app lications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorpora ted and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described her ein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for u se as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended t o implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a cr itical component is any component in a life support device or system whose failure to perform can be reasonably expected to c ause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diode s incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2016 , diodes incorporated www.diodes.com
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