052-6220 rev a 8-2007 APT60GT60JRDQ3 typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 330a) gate threshold voltage (v ce = v ge , i c = 700a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 60a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 60a, t j = 125c) collector cut-off current (v ce = 600v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 600v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm ssoa p d t j ,t stg t l APT60GT60JRDQ3 600 30 105 48 360 360a @ 600v 379 -55 to 150 300 unit volts ampswatts c parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 switching safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 600 3 4 5 2.0 2.5 2.8 330 2500 100 ? c e g 600v APT60GT60JRDQ3 sot-227 isotop ? file # e145592 "ul recognized" g e e c the thunderblot igbt ? is a new generation of high voltage power igbts. using non- punch through technology, the thunderblot igbt ? offers superior ruggedness and ultrafast switching speed. ? low forward voltage drop ? high freq. switching to 100khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated thunderbolt igbt ? downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clam ped inductive turn-on-energy of the igbt only, without the effect of a commutating diod e reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein . dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 60a t j = 150c, r g = 4.3 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 60a r g = 4.3 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 60a r g = 4.3 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 3100 390 185 7.5 290 20 130 360 17 34 235 26 1265 1505 1200 17 34 260 60 1285 2135 1705 unit pf v nc a ns j ns j thermal and mechanical characteristics unit c/w gm volts min typ max .33 .60 29.2 2500 characteristicjunction to case (igbt) junction to case (diode) package weightrms voltage (50-60hhz sinusoidal wavefomr ffrom terminals to mounting base for 1 min.) symbol r jc r jc w t v isolation downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 typical performance curves v gs(th) , threshold voltage v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) v ce = 480v v ce = 300v v ce = 120v i c = 60a t j = 25c 250s pulse test<0.5 % duty cycle 180160 140 120 100 80 60 40 20 0 180160 140 120 100 8060 40 20 0 4.03.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1.151.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 300250 200 150 100 50 0 1614 12 10 86 4 2 0 4.54.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 140120 100 8060 40 20 0 v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, threshold voltage vs. junction temperature figure 8, dc collector current vs case temperature t c = 125 c 9v 8v 7v t j = 125c t j = 25c t j = -55c i c = 120a i c = 60a i c = 30a v ge = 15v. 250s pulse test <0.5 % duty cycle 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 50 100 150 200 250 300 6 8 10 12 14 16 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 t c = 25c v ge = 15v 6v 10v 11v 13v 15v t c = -55c t j = 25c. 250s pulse test <0.5 % duty cycle i c = 120a i c = 60a i c = 30a downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 v ge =15v,t j =125c v ge =15v,t j =25c v ce = 400v r g = 4.3 ? l = 100h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature v ce = 400v v ge = +15v r g = 4.3 ? r g = 4.3 ? , l = 100 h, v ce = 400v v ce = 400v t j = 25c , or 125c r g = 4.3 ? l = 100h 2520 15 10 50 100 8060 40 20 0 70006000 5000 4000 3000 2000 1000 0 1200010000 80006000 4000 2000 0 v ge = 15v t j = 125c, v ge = 15v t j = 25 or 125c,v ge = 15v t j = 25c, v ge = 15v t j = 125c t j = 25c v ce = 400v v ge = +15v r g = 4.3 ? t j = 125c t j = 25c 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 0 10 20 30 40 50 0 25 50 75 100 125 r g = 4.3 ? , l = 100 h, v ce = 400v 350300 250 200 150 100 50 0 140120 100 8060 40 20 0 40003500 3000 2500 2000 1500 1000 500 0 70006000 5000 4000 3000 2000 1000 0 v ce = 400v v ge = +15v r g = 4.3 ? v ce = 400v v ge = +15v t j = 125c e off, 120a e on2, 120a e off, 60a e on2, 60a e off, 30a e on2, 30a e off, 120a e on2, 120a e off, 60a e on2, 60a e off, 30a e on2, 30a downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 typical performance curves 400350 300 250 200 150 100 50 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 c oes c res c ies 0.350.30 0.25 0.20 0.15 0.10 0.05 0 z jc , thermal impedance (c/w) 0.3 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 figure 19b, transient thermal impedance model 10 20 30 40 50 60 70 80 90 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current 120 5010 51 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc t j = 125 c t c = 75 c d = 50 %v ce = 400v r g = 4.3 ? peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 5,0001,000 500100 0.136 0.151 0.0434 0.0078 0.285 4.38 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to z ero when modeling only t he case to junction. z ext downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collectorvoltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collectorvoltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt60dq60 i c a d.u.t. v ce figure 21, inductive switching test circuit v cc downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 typical performance curves characteristic / test conditionsmaximum average forward current (t c = 92c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) symbol i f (av) i f (rms) i fsm symbol v f characteristic / test conditions i f = 60a forward voltage i f = 120a i f = 60a, t j = 125c static electrical characteristics unit amps unit volts min typ max 1.8 2.2 1.9 APT60GT60JRDQ3 6079 600 dynamic characteristics maximum ratings all ratings: t c = 25c unless otherwise speci?ed. ultrafast soft recovery anti-parallel diode min typ max - 160 - 70 - 100 - 4 - - 140 - 690 - 9 - - 80 - 1540 - 31 unit ns nc amps ns nc amps ns nc amps characteristicreverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 25 c i f = 60a, di f /dt = -200a/ s v r = 800v, t c = 125 c i f = 60a, di f /dt = -1000a/ s v r = 800v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c figure 24b, transient thermal impedance model z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 24a. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.5 single pulse 0.1 0.3 0.7 d = 0.9 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 0.700.60 0.50 0.40 0.30 0.20 0.10 0 0.159 0.255 0.186 0.0056 0.0850 0.490 dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to z ero when modeling only t he case to junction. z ext downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 t j = 125 c v r = 400v 30a 60a 120a 160140 120 100 8060 40 20 0 6050 40 30 20 10 0 duty cycle = 0.5 t j = 175 c 100 8060 40 20 0 1.21.0 0.8 0.6 0.4 0.2 0.0 600500 400 300 200 100 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 29. dynamic parameters vs. junction temperature figure 30. maximum average fo rward current vs. casetemperature v r , reverse voltage (v) figure 31. junction capacitance vs. reverse voltage 200180 160 140 120 100 8060 40 20 0 25002000 1500 1000 500 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 25. forward current vs. forward voltage figure 26. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 27. reverse recovery charge vs. current rate of change figure 28. reverse recovery cu rrent vs. current rate of change q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 120a 0 0.5 1.0 1.5 2.0 2.5 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 0 200 400 600 800 1000 1200 1400 1600 t j = 125 c v r = 400v 120a 60a 30a t rr q rr q rr t rr i rrm 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 downloaded from: http:///
052-6220 rev a 8-2007 APT60GT60JRDQ3 typical performance curves sot-227 (isotop ? ) package outline is otop ? is a registered trademark of sgs thomson. 4 3 1 2 5 5 zero 1 2 3 4 di f /dt - rate of diode current change through zero crossing. i f - forward conduction current i rrm - maximum reverse recovery current. t rr - reverse r ecovery time, measured from zero crossing where diode q rr - area under the curve defined by i rrm and t rr . current goes from positive to negative, to the point at which the straight line through i rrm and 0.25 i rrm passes through zero. figure 32. diode test circuit figure 33, diode reverse recovery waveform and definitions 0.25 i rrm pearson 2878 current transformer di f /dt adjust 30 h d.u.t. +18v 0v v r t rr / q rr waveform apt60m75l2ll 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * emitter/anode collector/cathode gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * emitter/anode emitter/anode terminals are shorted internally. current handling capability is equal for either emitter/anode terminal. downloaded from: http:///
|
