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A2T20H160W04Nr3 1 rf device data nxp semiconductors rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 28 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1880 to 2025 mhz. 1880?2025 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 400 ma, v gsb =0.2vdc,p out = 28 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 1880 mhz 16.8 45.8 8.3 ?32.5 1960 mhz 17.0 47.7 8.2 ?33.5 2025 mhz 16.5 47.9 8.0 ?34.3 features ? advanced high performance in--package doherty ? designed for wide instantaneous bandwidth applications ? greater negative gate--source voltage r ange for improved class c operation ? able to withstand extremely high output vswr and broadband operating conditions ? designed for digital predistorti on error corre ction systems document number: A2T20H160W04N rev. 0, 8/2016 nxp semiconductors technical data 1880?2025 mhz, 28 w avg., 28 v airfast rf power ldmos transistor A2T20H160W04Nr3 om--780--4l plastic (top view) rf outa /v dsa 31 figure 1. pin connections 42 rf outb /v dsb rf ina /v gsa rf inb /v gsb note: exposed backside of the package is the source terminal for the transistor. carrier peaking (1) 1. pin connections 1 and 2 are dc coupled and rf independent. ? 2016 nxp b.v.
2 rf device data nxp semiconductors A2T20H160W04Nr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +125 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 75 ? c, 28 w avg., w--cdma, 28 vdc, i dqa = 400 ma, v gsb = 0.2 vdc, f = 1960 mhz r ? jc 0.45 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 ? c table 5. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 5 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a, carrier gate threshold voltage (v ds =10vdc,i d =80 ? adc) v gs(th) 1.4 1.8 2.2 vdc gate quiescent voltage (v dd =28vdc,i da = 400 madc, measured in functional test) v gsa(q) 2.2 2.6 3.0 vdc drain--source on--voltage (v gs =10vdc,i d =0.8adc) v ds(on) 0.1 0.15 0.3 vdc on characteristics -- side b, peaking gate threshold voltage (v ds =10vdc,i d =110 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =1.1adc) v ds(on) 0.1 0.15 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.nxp.com/rf/calculators . 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.nxp.com/rf and search for an1955. 4. side a and side b are tied together for these measurements. (continued)
A2T20H160W04Nr3 3 rf device data nxp semiconductors table 5. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2,3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 400 ma, v gsb =0.2vdc, p out = 28 w avg., f = 1960 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 16.0 17.0 19.0 db drain efficiency ? d 45.0 47.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.75 8.2 ? db adjacent channel power ratio acpr ? ?33.5 ?28.0 dbc load mismatch (3) (in nxp doherty test fixture, 50 ohm system) i dqa = 400 ma, v gsb = 0.2 vdc, f = 1960 mhz vswr 10:1 at 32 vdc, 158 w cw output power (3 db input overdrive from 90 w cw rated power) no device degradation typical performance (3) (in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 400 ma, v gsb =0.2vdc, 1880?2025 mhz bandwidth p out @ 1 db compression point, cw p1db ? 90 ? w p out @ 3 db compression point (4) p3db ? 200 ? w am/pm (maximum value measured at the p3db compression point across the 1880?2025 mhz bandwidth) ? ? ?9.1 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 140 ? mhz gain flatness in 145 mhz bandwidth @ p out =28wavg. g f ? 0.5 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.002 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) ? p1db ? 0.003 ? db/ ? c table 6. ordering information device tape and reel information package A2T20H160W04Nr3 r3 suffix = 250 units, 32 mm tape width, 13--inch reel om--780--4l 1. v dda and v ddb must be tied together and powered by a single dc power supply. 2. part internally matched both on input and output. 3. measurement made with device in an a symmetrical doherty configuration. 4. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data nxp semiconductors A2T20H160W04Nr3 figure 2. A2T20H160W04Nr3 test circuit component layout d75413 c1 c2 c11 c4 c5 c6 c21 c16 c17 c7 c14 c15 r1 r2 r3 c8 c3 z1 c13 c9 c18 c19 c20 c10 c22 c12 cut out area a2t20h160--4wn rev. 2 v gga c p v dda v ggb v ddb *c2 and c3 are mounted vertically. note: v dda and v ddb must be tied together and powered by a single dc power supply. table 7. A2T20H160W04Nr3 test circui t component designations and values part description part number manufacturer c1 6.8 pf chip capacitor atc600f6r8bt250xt atc c2, c3 12 pf chip capacitors atc100b120jt500xt atc c4 1.2 pf chip capacitor atc600f1r2bt250xt atc c5 0.6 pf chip capacitor atc600f0r6bt250xt atc c6, c7, c8, c9, c10 12 pf chip capacitors atc600f120jt250xt atc c11 0.4 pf chip capacitor atc600f0r4bt250xt atc c12, c13 0.5 pf chip capacitors atc600f0r5bt250xt atc c14, c15, c16, c17, c18, c19, c20, c21, c22 10 ? f chip capacitors grm32er61h106ka12l murata r1, r2 3.3 ? , 1/2 w chip resistors erj--14yj3r3u panasonic r3 50 ? , 4 w chip resistor cw12010t0050gbk atc z1 1800?2200 mhz band, 90 ? , 2 db directional coupler x3c20f1-02s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d75413 mtl
A2T20H160W04Nr3 5 rf device data nxp semiconductors typical characteris tics ? 1880?2025 mhz parc (db) ?1.8 ?1 ?1.2 ?1.4 ?1.6 ?2 1850 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 28 watts avg. 15.4 17.4 17.2 17 ?37 50 49 48 47 ?32 ?33 ?34 ?35 ? d , drain efficiency (%) g ps , power gain (db) 16.8 16.6 16.4 16.2 16 15.8 15.6 1875 1900 1925 1950 1975 2000 2025 2050 46 ?36 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?6 0 ?10 ?20 ? 30 ? 50 1 300 imd, intermodulatio n distortion (dbc) ? 40 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 20 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 10 30 50 70 30 60 55 50 45 40 35 ? d ? drain efficiency (%) 60 ? d acpr parc acpr (dbc) ?38 ?26 ?28 ?30 ?34 ?32 ?36 17.8 g ps , power gain (db) 17.4 17 16.6 16.2 15.8 15.4 g ps ?5 1 ? d parc g ps v dd =28vdc,p out = 30.6 w (pep), i dqa = 400 ma v gsb = 0.2 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 1960 mhz im3--l im5--u im7--l im7--u 100 ?1 db = 18.24 w 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0. 01% probab ility on ccdf ?2 db = 31.11 w ?3 db = 43.06 w im5--l im3--u v dd =28vdc,i dqa = 400 ma, v gsb =0.2vdc f = 1960 mhz, single--carrier w--cdma v dd =28vdc,p out =28w(avg.),i dqa = 400 ma, v gsb =0.2vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% probabilit y on ccdf 40 acpr
6 rf device data nxp semiconductors A2T20H160W04Nr3 typical characteris tics ? 1880?2025 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 13 19 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 18 17 10 10 ?60 acpr (dbc) 16 15 14 0 ?30 ?40 ?50 figure 7. broadband frequency response 13 19 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 400 ma v gsb =0.2vdc 17 16 15 gain (db) 18 14 1600 1700 1800 1900 2000 2100 2200 2300 2400 gain acpr 1880 mhz g ps 1960 mhz 2025 mhz v dd =28vdc,i dqa = 400 ma, v gsb =0.2vdc single--carrier w--cdma, 3.84 mhz channel bandwidth 100 ? d 1880 mhz 2025 mhz input signal par = 9.9 db @ 0.01% probabilit y on ccdf 2025 mhz 1960 mhz 1880 mhz 1960 mhz
A2T20H160W04Nr3 7 rf device data nxp semiconductors package dimensions
8 rf device data nxp semiconductors A2T20H160W04Nr3
A2T20H160W04Nr3 9 rf device data nxp semiconductors
10 rf device data nxp semiconductors A2T20H160W04Nr3 product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .nxp.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2016 ? initial release of data sheet
A2T20H160W04Nr3 11 rf device data nxp semiconductors how to reach us: home page: nxp.com web support: nxp.com/support information in this document is provided solely to enable system and software implementers to use nxp products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. nxp reserves the right to make changes without further notice to any products herein. nxp makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does nxp assume any li ability arisi ng out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or i ncidental damages. ?typical? parameters that may be provided in nxp data sheets and/ or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. nxp does not convey any license under its patent rights nor the rights of others. nxp sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/ salestermsandconditions . nxp, the nxp logo, freescale, the freescale logo, and airfast are trademarks of nxp b.v. all other product or service names are the property of their respective owners. e 2016 nxp b.v. document number: A2T20H160W04N rev. 0, 8/2016

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