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Datasheet File OCR Text: |
i nchange semiconductor product specification isc website 1 ultrafast recovery rectifier m u r 30 6 0 features ultrafast recovery time low forward voltage low leakage current 1 75 operating junction temperature high temperature glass passiva ted junction mechanical characteristics case: epoxy, molded finish: all external surf aces corrosion resistant and terminal leads are readily solderable lead temperature for soldering purposes: 260 max. for 10 seconds applications designed for use in switching power supplies, inverters and a s free wheeling diodes. a bsolute maximum ratings (t a =25 ) symbol parameter value unit v rrm v rwm v r peak repetitive reverse voltage working peak rever se voltage dc blocking voltage 6 00 v i f(av) average rectified forward current (rated v r ) 30 a i f rm peak repetitive forward current (rated v r ,square wave,20khz) 30 a i f sm nonrepetitive peak surge current (surge applied at rated load conditions half - wave, single phase, 60hz) 30 0 a t j junction temperature - 65~ 1 75 t stg storage temperature range - 65~175
i nchange semiconductor product specification isc website 2 ultrafast recovery rectifier mur 30 6 0 thermal characteristics symbol parameter max unit r th j - c thermal r esistance ,ju nction to case 1. 0 /w electrical characteristics (t a =25 (pulse test: pulse width=300 s,duty cycle 2%) symbol parameter conditions max unit v f maximum instantaneous forward voltage i f = 30 a 1.68 v i r maximum instantaneous reverse current v rrm = 6 00v 20 t rr maximum reverse recovery time i f = 0.5a, i r = 1a, i r r = 0.25a 8 0 ns |
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