? 2013 microchip technology inc. ds200002328b-page 3 mcp87030 features: ? low drain-to-source on resistance (r ds(on) ) ? low total gate charge (q g ) and gate-to-drain charge (q gd ) ? low series gate resistance (r g ) ?fast switching ? capable of short dead-time operation ? rohs compliant applications: ? point-of-load dc-dc converters ? high-efficiency power management in servers, networking and automotive applications description: the mcp87030 is an n-channel power mosfet in a popular pdfn 5 mm x 6 mm package. advanced packaging and silicon processing technologies allow the mcp87030 to achieve a low q g for a given r ds(on) value, resulting in a low figure of merit (fom). combined with low r g , the low fom of the mcp87030 allows high efficiency power conversion with reduced switching and conduction losses. package type product summary table: unless otherwise indicated, t a = +25c parameters sym. min. typ. max. units conditions operating characteristics drain-to-source breakdown voltage bv dss 25 ? ? v v gs = 0v, i d = 250 a gate-to-source threshold voltage v gs(th) 11.31.6 vv ds = v gs , i d = 250 a drain-to-source on resistance r ds(on) ?3.3 4 m ? v gs = 4.5v, i d = 20a ?2.83.5m ? v gs = 10v, i d = 20a total gate charge q g ?1722ncv ds = 12.5v, i d = 20a, v gs = 4.5v gate-to-drain charge q gd ?6.7? ncv ds = 12.5v, i d = 20a series gate resistance r g ?1.2? ? ? thermal characteristics thermal resistance junction-to-x r jx ??55c/w note 1 thermal resistance junction-to-case r jc ??1.2c/w note 2 note 1: r jx is determined with the device surface mounted on a 4-layer fr4 pcb, with a 1" x 1" mounting pad of 2 oz. copper. this characteristic is dependent on user?s board design. 2: r jc is determined using jedec 51-14 method. this characteristic is determined by design. pdfn 5 x 6 sd s s g d d d 1 2 3 45 6 7 8 high-speed n-channel power mosfet
mcp87030 ds200002328b-page 4 ? 2013 microchip technology inc. 1.0 electrical characteristics absolute maximum ratings? v ds .......................................................................+25v v gs ........................................................... +10.0v / -8v i d, continuous ................................. 100a, t c = +25c p d .....................................................2.2w, t a = +25c t j , t stg ..............................................-55c to +150c e as avalanche energy ..................................... 450 mj i d =30a, l=1mh, r g =25 ? ? notice: stresses above those listed under ?maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc electrical characteristics electrical characteristics: unless otherwise indicated, t a = +25c parameters sym. min. typ. max. units conditions static characteristics drain-to-source breakdown voltage bv dss 25 ? ? v v gs = 0v, i d = 250 a drain-to-source leakage current i dss ?? 1av gs = 0v, v ds = 20v gate-to-source leakage current i gss ? ? 100 na v ds = 0v, v gs = 10v/-8v gate-to-source threshold voltage v gs(th) 11.31.6vv ds = v gs , i d = 250 a drain-to-source on resistance r ds(on) ?4?m ? v gs = 3.3v, i d = 20a ?3.3 4 m ? v gs = 4.5v, i d = 20a ?2.83.5m ? v gs = 10v, i d = 20a transconductance g fs ?113? sv ds = 12.5v, i d = 20a dynamic characteristics input capacitance c iss ? 1635 ? pf v gs = 0v, v ds = 12.5v, f = 1 mhz output capacitance c oss ? 730 ? pf v gs = 0v, v ds = 12.5v, f = 1 mhz reverse transfer capacitance c rss ? 160 ? pf v gs = 0v, v ds = 12.5v, f = 1 mhz total gate charge q g ?1722ncv ds = 12.5v, i d = 20a, v gs = 4.5v gate-to-drain charge q gd ?6.7?ncv ds = 12.5v, i d = 20a gate-to-source charge q gs ?3.2?ncv ds = 12.5v, i d = 20a gate charge at v gs(th) q g(th) ?2.1?ncv ds = 12.5v, i d = 20a output charge q oss ?14.3? ncv ds = 12.5v, v gs = 0 turn-on delay time t d(on) ?5?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? rise time t r ?17?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? turn-off delay time t d(off) ?14?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? fall time t f ?16?nsv ds = 12.5v, v gs = 4.5v, i d = 20a, r g = 2 ? series gate resistance r g ?1.2? ?
? 2013 microchip technology inc. ds200002328b-page 5 mcp87030 diode characteristics diode forward voltage v fd ?0.8 1 vi s = 20a, v gs = 0v reverse recovery charge q rr ?32?nci s = 20a, di/dt = 300 a/s reverse recovery time t rr ?20?nsi s = 20a, di/dt = 300 a/s avalanche characteristics avalanche energy e as 112.5 ? ? mj i d = 15a, l = 1 mh, r g = 25 ? temperature characteristics electrical characteristics: unless otherwise indicated, t a = +25c parameters sym. min. typ. max. units conditions temperature ranges operating junction temperature range t j -55 ? 150 c storage temperature range t a -55 ? 150 c package thermal resistances thermal resistance junction-to-x, 8l 5x6-pdfn r jx ??55c/w note 1 thermal resistance junction-to-case, 8l 5x6-pdfn r jc ??1.2c/w note 2 note 1: r jx is determined with the device surface mounted on a 4-layer fr4 pcb, with a 1" x 1" mounting pad of 2 oz. copper. this characteristic is dependent on user?s board design. 2: r jc is determined using jedec 51-14 method. this characteristic is determined by design. dc electrical characteristics (continued) electrical characteristics: unless otherwise indicated, t a = +25c parameters sym. min. typ. max. units conditions
mcp87030 ds200002328b-page 6 ? 2013 microchip technology inc. 2.0 typical performance curves note: unless otherwise indicated, t a = +25c. figure 2-1: typical output characteristics. figure 2-2: typical transfer characteristics. figure 2-3: on resistance vs. gate-to- source voltage. figure 2-4: normalized on resistance vs. temperature. figure 2-5: gate-to-source voltage vs. gate charge. figure 2-6: capacitance vs. drain-to- source voltage. note: the graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. the performance characteristics listed herein are not tested or guaranteed. in some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. 30 40 50 60 70 80 d rain current (a) v 25v v gs = 3v v gs = 10v v gs = 4.5v 0 10 20 0.0 0.2 0.4 0.6 0.8 i d - d v ds - drain-to-source voltage (v) v gs = 2 . 5v 30 40 50 60 70 80 d rain current (a) t c = +25c t =+125 c v ds = 5v 0 10 20 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 i d - d v gs - gate-to-source voltage (v) t c = +125 c t c = -55c 5 6 7 8 9 10 - on-state resistance (m ? ) t c = +125c i d = 20a 2 3 4 0246810 r ds(on) - v gs - gate-to-source voltage (v) t c = +25c 08 1 1.2 1.4 1.6 1.8 m alized on-state resistance i d = 2 0 a v gs = 4.5v 0.4 0.6 0 . 8 -60 -40 -20 0 20 40 60 80 100 120 140 160 nor m t c - case temperature (c) 4 5 6 7 8 9 10 - to-source voltage (v) i d = 2 0 a v ds = 5v v ds = 12.5v 0 1 2 3 0 5 10 15 20 25 30 35 v gs -gate - q g - gate charge (nc) 1.5 2 2.5 3 3.5 c apacitance (nf) c iss f= 1 mhz v gs = 0v 0 0.5 1 0 5 10 15 20 c - c v ds - drain-to-source voltage (v) c oss c rss
? 2013 microchip technology inc. ds200002328b-page 7 mcp87030 note: unless otherwise indicated, t a = +25c. figure 2-7: gate-to-source threshold voltage vs. temperature. figure 2-8: source-to-drain current vs. source-to-drain voltage. figure 2-9: maximum safe operating area. figure 2-10: maximum drain current vs. temperature. figure 2-11: transient thermal impedance. figure 2-12: single-pulse unclamped inductive switching. 1.1 1.3 1.5 1.7 ) - gate-to-source s hold voltage (v) i d = 250 a 0.7 0.9 -75 -50 -25 0 25 50 75 100 125 150 175 v gs(th ) thre s t c - case temperature (c) 0.1 1 10 100 urce-to-drain current (a) t c = +25c t c = +125c 0.001 0.01 0.0 0.2 0.4 0.6 0.8 1.0 i sd -so v sd - source-to-drain voltage (v) 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) dc 1s 100 ms 10 ms 1 ms operation in this range is limited by r ds(on) r ja = 55 c/w single pulse 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( ? & |