s m d ty p e w w w . k e x i n . c o m . c n 1 m os f e t features l o w c i s s c i s s = 580 p f t y p . b ui l t -in g -s pr o t e c t ion diode agai n s t e s d l o w on - s t a t e re s i s t a n c e r d s (o n ) 1 = 6 7 . 0 m m ax . (v g s = 10 v , i d = 2 . 0 a ) r d s (o n ) 2 = 8 6 . 0 m m ax . (v g s = 4 . 5 v , i d = 2 . 0 a ) r d s (o n ) 3 = 9 5 . 0 m m ax . (v g s = 4 . 0 v , i d = 2 . 0 a ) tssop-8 unit: mm +0.1 -0.1 6.45 +0.1 -0.1 4.45 0.15 +0.03 -0.03 1 4 8 5 1 :drain1 2, 3 :source1 4 :gate1 5 :gate2 6, 7 :source2 8 :drain2 source2 body diode gate protection diode gate2 drain2 source1 body diode gate protection diode gate1 drain1 du al n- ch an n el m osf et kx 4n03w a b s o l u te m a x i m u m ra ti n g s t a = 2 5 s y m b o l r a t i n g u n i t v d s 6 0 v g s 2 0 c o n t i n u o u s d r a i n c u r r e n t t c = 2 5 i d 3 . 8 i d m 1 5 . 2 p o w e r d i s s i p a t i o n ( n o t e . 1 ) t a = 2 5 p d 1 w t j 1 5 0 t st g - 5 5 t o 1 5 0 v a p u l s e d d r a i n c u r r e n t ( n o t e . 1 ) p a r a m e t e r d r a i n - s o u r c e v o l t a g e g a t e - s o u r c e v o l t a g e j u n c t i o n t e m p e r a t u r e s t o r a g e t e m p e r a t u r e r a n g e n o t e . 1 : p w 1 0 s , d u t y c y c l e 1 % m a r k i n g 4 n 0 3 k a * * * m a r k i n g
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t du al n- ch an n el m osf et kx 4n03w e l e c tr i c a l ch a r a c te r i s ti c s t a = 2 5 c h a r a c t e r i s t i c s s y m b o l t e s t c o n d i t i o n s m i n . t y p . m a x . u n i t z e r o g a t e v o l t a g e d r a i n c u r r e n t i d ss v d s = 6 0 v , v g s = 0 0 1 v ua i t n e r r u c e g a k a e l e t a g g ss v g s = 2 0 v , v d s = 0 v 10 ua v e g a t l o v f f o - t u c e t a g g s(o f f ) v d s = 1 0 v , i d = 1 m a 1 . 5 2 . 5 v f o r w a r d t r a n s f e r a d m i t t a n c e | y f s | v d s = 1 0 v , i d = 2 . 0 a 2 . 5 s d r a i n t o s o u r c e o n - s t a t e r e s i s t a n c e r d s(o n )1 v g s = 1 0 v , i d = 2 . 0 m 7 6 a ? r d s(o n )2 v g s = 4 . 5 v , i d = 2 . 0 m 6 8 a ? r d s(o n )3 v g s = 4 . 0 v , i d = 2 . 0 m 5 9 a c e c n a t i c a p a c t u p n i i s s v d s = 1 0 f p 0 8 5 v c e c n a t i c a p a c t u p t u o o s s v g s = 0 f p 0 0 1 v re v e r s e t r a n s f e r c a p a c i t a n c e c rs s f = 1 f p 0 5 z h m t e m i t y a l e d n o - n r u t d (o n ) v d d = 3 0 v , i d = 2 . 0 s n 0 1 a t e m i t e s i r r v g s = 1 0 s n 9 v t e m i t y a l e d f f o - n r u t d (o f f ) r g = 6 3 2 n s t e m i t l l a f f 4 n s q e g r a h c e t a g l a t o t g v d d = 4 8 c n 2 1 v q e g r a h c e c r u o s o t e t a g g s v g s = 1 0 c n 2 v q e g r a h c n i a r d o t e t a g g d i d = 3 . 8 c n 3 a b o d y d i o d e f o r w a r d v o l t a g e v f (s-d ) i f = 3 . 8 a , v g s = 0 v 0 8 . 0 v t e m i t y r e v o c e r e s r e v e r rr i f = 3 . 8 a , v g s = 0 s n 3 3 v r e v e r s e r e c o v e r y c h a r g e q rr d i / d t = 1 0 0 a /u c n 8 5 s test circuit 3 gate charge v gs = 20 0 v pg. r g = 25 50 d.u.t. l v dd test circuit 1 avalanche capability pg. d.u.t. r l v dd test circuit 2 switching time r g pg. i g = 2 ma 50 d.u.t. r l v dd i d v dd i as v ds bv dss starting t ch v gs 0 = 1 s duty cycle 1% v gs w a v e f o r m v ds w a v e f o r m v gs v ds 10% 0 0 90% 90% 90% v gs(on) v ds t on t off t d(on) t r t d(off) t f 10% 10% v 60 i d =250a, v gs =0v v dss drain-source breakdown v oltage
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t du al n- ch an n el m osf et kx 4n03w t y p i c a l ch a r a c te r i s i ti c s 25 50 75 100 125 150 20 40 60 80 100 120 0 dera ting f a ct or of fo r w ard bias safe oper a ting area dt - der ating f actor - % t a - ambient t emper ature - ?c 0 t c - case temperature - ?c p t - total power dissipation - w 0 0 25 total power dissipation vs. case temperature 50 75 100 125 150 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 single pulse mounted on ceramic board of 50 cm x1.1 mm 2unit: p d ( f e t 1 ) : p d ( f e t 2 ) = 1 : 1 2 2unit 1unit drain current vs. drain to source voltage v ds - drain to source voltage - v i d - drain current - a 0.2 0 0.8 1.0 0.4 0.6 0 4 8 12 16 4.5 v v gs = 10 v 4.0 v 10 1 0.1 0.01 0.001 0.0001 0.00001 0 1 2 3 4 100 25 ? c 75 ? c v gs - gate to source v oltage - v 25 ? c v ds = 10 v forward transfer characteristics i d - drain current - a t a = 125? c gate cut-off voltage vs. channel temperature t ch - channel temperature - ?c v gs(off) - gate cut-off voltage - v v d s = 1 0 v i d = 1 m a 50 50 100 0 5 1 0 1 1.5 2 2.5 3 forward bias safe operating area 10.0 100.0 i d - drain current - a 1.0 v ds - drain to source voltage - v 100 10 1 0.1 0.1 0.01 s ingl e p u l s e mounted on ceramic board of 50 cm x1.1 mm p d ( f e t 1 ) : p d ( f e t 2 ) = 1 : 1 2 1 0 m s 10 0 m s d c (1un i t ) d c (2un i t ) 1 m s r ds(on) limited (@v gs = 10 v) i d (puls e ) i d ( d c ) p w = 1 0 0 s
s m d ty p e w w w . k e x i n . c o m . c n 4 m osf e t . du al n- ch an n el m osf et kx 4n03w t y p i c a l ch a r a c te r i s i ti c s 1 10 100 0.1 v ds = 10 v i d - drain current - a | y fs | - forward transfer admittance - s 1 10 0.10 0.010 0.01 100 75 ?c 125 ?c 25 ?c t a = 25 ?c forward transfer admittance vs. drain current drain to source on-state resistance vs. drain current 1 0.1 0 0 1 0 1 1 0 . 0 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? t a = 125?c 75?c 25?c 25?c v gs = 4.0 v 0 40 80 120 160 drain to source on-state resistance vs. drain current 1 0.1 0 0 1 0 1 1 0 . 0 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? t a = 125?c 75?c 25?c 25?c v gs = 4.5 v 0 40 80 drain to source on-state resistance vs. drain current 1 0.1 0 0 1 0 1 1 0 . 0 i d - drain current - a r ds(on) - drain to source on-state resistance - m ? t a = 125?c 75?c 25?c 25?c v gs = 10 v 0 40 80 120 160 drain to source on-state resistance vs. channel temperature t ch - channel temperature - ?c i d = 2.0 a 50 0 50 100 150 10 30 50 70 90 110 130 r ds (on) - drain to source on-state resistance - m ? v gs = 4.0 v 4.5 v 10 v 0 0 25 50 75 100 125 150 2 4 6 8 10 12 14 16 18 20 r ds (on) - drain to source on-state resistance - m v gs - gate to source voltage - v i d = 2.0 a drain to source on-state resistance vs. gate to source voltage
s m d ty p e w w w . k e x i n . c o m . c n 5 m os f e t du al n- ch an n el m osf et kx 4n03w t y p i c a l ch a r a c te r i s i ti c s capacitance vs. drain to source voltage v ds - drain to source voltage - v c iss , c oss , c rss - capacitance - pf 1 0 0.1 1 0 0 10 0 0 100 0 0 1 10 100 f = 1 mhz c iss c rss c oss 0.1 1 10 i d - drain current - a t d(on) , t r , t d(off) , t f - switching time - ns 10 100 1 switching characteristics v dd = 30 v v gs(on) = 10 v r g = 6 t d( o f f ) t d(o n ) t f t r 0.01 0.1 1 10 100 0.4 0.6 0.8 1 1.2 source to drain diode forward voltage i f - source to drain current - a v f(s-d) - body diode forward voltage - v v gs = 0 v reverse recovery time vs. drain current i f - drain current - a t rr - reverse recovery time - ns di/dt = 100 a / s v gs = 0 v 1 0.1 1 0 1.0 10 100 100 dynamic input/output characteristics v gs - gate to source voltage - v q g - gate charge - nc v ds - drain to source voltage - v 0 0 2 4 6 8 10 12 2 4 6 8 10 12 v dd = 48 v 30 v 12 v i d = 3.8 a
s m d ty p e w w w . k e x i n . c o m . c n 6 m os f e t du al n- ch an n el m osf et kx 4n03w t y p i c a l ch a r a c te r i s i ti c s pw - pulse width - s transient thermal resistance vs. pulse width r th(t) - transient thermal resistance - ?c/ w 0.01 1 10 100 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 r th(ch-a) = 73.5?c/ w (2un i t ) r th(ch-a) = 125?c/ w (1un i t ) single pulse mounted on ceramic board of 50 cm x1.1 mm 2unit: p d ( f e t 1 ) : p d ( fe t 2 ) = 1 : 1 2 single avalanche current vs. inductive load l - inductive load - h i as - single avalanche current - a 10 v dd = 30 v r g = 25 v gs = 20 0 v starting t ch = 2 5 ? c i as = 3.8 a e as = 33 mj 10 100 1m 10m 1 single avalanche energy derating factor starting t ch - starting channel temperature - ?c energy derating factor - % 25 50 75 100 125 150 v dd = 30 v r g = 25 v gs = 20 0 v i as 3.8 a 0 20 40 60 80 100 120
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