STU6NA100 n - channel 1000v - 1.45 w - 6a - max220 fast power mos transistor preliminary data n typical r ds(on) = 1.45 w n 30v gate to source voltage ranting n 100% avalanche tested n repetitive avalanche data at 100 o c n low intrinsic capacitance n gate charge minimized n reduced voltage spread applications n high current, high speed switching n switch mode power supply (smps) n consumer and industrial lighting n dc-ac converter for welding equipment and uninterruptable power supply (ups) ? internal schematic diagram june 1998 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 1000 v v dgr drain- gate voltage (r gs = 20 k w ) 1000 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 o c6a i d drain current (continuous) at t c = 100 o c 3.9 a i dm ( ) drain current (pulsed) 24 a p tot total dissipation at t c = 25 o c 160 w derating factor 1.28 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c ( ) pulse width limited by safe operating area type v dss r ds(on) i d STU6NA100 1000 v < 1.7 w 6 a max220 1 2 3 1/5
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 0.8 62 0.1 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 6a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 50 v) 800 mj electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 1000 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 100 o c 50 500 m a m a i gss gate-body leakage current (v ds = 0) v gs = 30 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 2.25 3 3.75 v r ds(on) static drain-source on resistance v gs = 10 v i d = 3 a 1.45 1.7 w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 6a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 3 a 6 7 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 3170 270 76 4100 351 99 pf pf pf STU6NA100 2/5
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 500 v i d = 3.5 a r g = 4.7 w v gs = 10 v 28 19 40 27 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 800 v i d = 7 a v gs = 10 v 125 17 58 150 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 800 v i d = 7 a r g = 4.7 w v gs = 10 v 35 15 55 50 21 77 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 6 24 a a v sd ( * ) forward on voltage i sd = 6 a v gs = 0 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a di/dt = 100 a/ m s v dd = 100 v t j = 150 o c 835 14 33 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area STU6NA100 3/5
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.2 2.4 0.087 0.094 a2 2.9 3.1 0.114 0.122 b 0.7 0.93 0.027 0.036 b1 1.25 1.4 0.049 0.055 b2 1.2 1.38 0.047 0.054 c 0.45 0.6 0.18 0.023 d 15.9 16.3 0.626 0.641 d1 9 9.35 0.354 0.368 d2 0.8 1.2 0.031 0.047 d3 2.8 3.2 0.110 0.126 e 2.44 2.64 0.096 0.104 e 10.05 10.35 0.396 0.407 l 13.2 13.6 0.520 0.535 l1 3 3.4 0.118 0.133 a a2 a1 c d3 d1 d2 d b1 b2 b e l l1 e p011r max220 mechanical data STU6NA100 4/5
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