? 2017 ixys corporation, all rights reserved symbol test conditions maximum ratings v dsx t j = 25 ? c to 150 ? c 1000 v v dgx t j = 25 ? c to 150 ? c, r gs = 1m ? 1000 v v gsx continuous ? 20 v v gsm transient ? 30 v p d t c = 25 ? c60w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force 10..65 / 22..14.6 n/lb weight 2.5 g ds100596a(4/17) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dsx v gs = - 5v, i d = 25 ? a 1000 v v gs(off) v ds = 25v, i d = 25 ? a - 2.0 - 4.0 v i gsx v gs = ? 20v, v ds = 0v ??????????????????????? 50 na i dsx(off) v ds = v dsx , v gs = - 5v 1 ? a t j = 125 ? c 15 ?? a r ds(on) v gs = 0v, i d = 400ma, note 1 21 ? i d(on) v gs = 0v, v ds = 50v, note 1 800 ma high voltage depletion mode mosfet n-channel IXTA08N100D2HV v dsx = 1000v i d(on) > 800ma r ds(on) ? ? ? ? ? 21 ? ? ? ? ? features ? high voltage package ? normally on mode ? ? international standard package ? molding epoxies meet ul 94 v-0 flammability classification advantages ? easy to mount ? space savings ? high power density applications ? audio amplifiers ? start-up circuits ? protection circuits ? ramp generators ? current regulators ? active loads g = gate d = drain s = source tab = drain to-263hv g s d (tab) g d s preliminary technical information
IXTA08N100D2HV ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 30v, i d = 400ma, note 1 330 560 ms c iss 325 pf c oss v gs = -10v, v ds = 25v, f = 1mhz 24 pf c rss 6.5 pf t d(on) 28 ns t r 57 ns t d(off) 34 ns t f 48 ns q g(on) 14.6 nc q gs v gs = +5v, v ds = 500v, i d = 400ma 1.2 nc q gd 8.3 nc r thjc 2.08 ?? c/w safe-operating-area specification characteristic values symbol test conditions min. typ. max. soa v ds = 800v, i d = 45ma, t c = 75 ? c, tp = 5s 36 w source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. v sd i f = 800ma, v gs = -10v, note 1 0.8 1.3 v t rr 1.03 s i rm 7.40 a q rm 3.80 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t ? 300 ? s, duty cycle, d ? 2%. resistive switching times v gs = ? 5v, v ds = 500v, i d = 400ma r g = 10 ? (external) preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 800ma, -di/dt = 100a/ ? s v r = 100v, v gs = -10v to-263hv outline pin: 1 - gate 2 - source 3 - drain
? 2017 ixys corporation, all rights reserved IXTA08N100D2HV fig. 1. output characteristics @ t j = 25 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 02468101214 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v 0v - 1v fig. 2. extended output characteristics @ t j = 25 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 1020304050607080 v ds - volts i d - amperes v gs = 5v 2v 1v - 2v - 1v 0v fig. 3. output characteristics @ t j = 125 o c 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 5v 1v - 1v - 2v 0v - 3v fig. 4. drain current @ t j = 25 o c 1e-08 1e-07 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.00v - 3.25v - 3.50v - 3.75v - 4.50v - 4.00v - 4.25v fig. 6. dynamic resistance vs. gate voltage 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 -4.6 -4.4 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 v gs - volts r o - ohms ? v ds = 700v - 100v t j = 25 o c t j = 100 o c fig. 5. drain current @ t j = 100 o c 1.e-06 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 v ds - volts i d - amperes v gs = - 3.25v - 3.50v - 3.75v - 4.00v - 4.25v - 4.50v
IXTA08N100D2HV ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. normalized r ds(on) vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 0v i d = 0.4a fig. 8. r ds(on) normalized to i d = 0.4a value vs. drain current 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 i d - amperes r ds(on) - normalized v gs = 0v 5v t j = 125 o c t j = 25 o c fig. 9. input admittance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -4.0 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 v gs - volts i d - amperes t j = 125 o c 25 o c - 40 o c v ds = 30v fig. 10. transconductance 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i d - amperes g f s - siemens t j = - 40 o c v ds = 30v 25 o c 125 o c fig. 12. forward voltage drop of intrinsic diode 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 125 o c v gs = -10v t j = 25 o c fig. 11. breakdown and threshold voltages vs. junction temperature 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade bv / v gs(off) - normalized v gs(off) @ v ds = 25v bv dsx @ v gs = - 5v
? 2017 ixys corporation, all rights reserved ixys ref: t_08n100d2(1c) 02-25-14 IXTA08N100D2HV fig. 14. gate charge -5 -4 -3 -2 -1 0 1 2 3 4 5 0 2 4 6 8 10121416 q g - nanocoulombs v gs - volts v ds = 500v i d = 400ma i g = 1ma fig. 13. capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 17. maximum transient thermal impedance 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 15. forward-bias safe operating area @ t c = 25 o c 0.01 0.10 1.00 10.00 10 100 1,000 v ds - volts i d - amperes 1ms 100 s r ds(on) limit 10ms 100ms dc 25 s t j = 150 o c t c = 25 o c single pulse fig. 16. forward-bias safe operating area @ t c = 75 o c 0.01 0.10 1.00 10.00 10 100 1,000 v ds - volts i d - amperes t j = 150 o c t c = 75 o c single pulse 1ms 100 s r ds(on) limit 10ms 100ms dc 25 s
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