elektronische bauelemente SSG07P06 -7a, -60v, r ds(o ) 40m ? p-ch enhancement mode power mosfet 19-apr-2017 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free description the SSG07P06 is the highest performance trench p-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . the SSG07P06 meet the rohs and green product requirement with full function reliability approved. features advanced high cell density trench technology super low gate charge green device available marking package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -60 v gate-source voltage v gs 20 v t a =25c -7 a continuous drain current @v gs =10v 1 t a =70c i d -5.6 a pulsed drain current 2 i dm -28 a total power dissipation t a =25c p d 3.1 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10sec, 40 thermal resistance junction-ambient 1 steady state, 105 thermal resistance junction-ambient r ja 125 thermal resistance junction-case 1 r jc 30 c / w sop-8 s s s g d d d d millimeter millimeter ref. min. max. ref. min. max. a 5.80 6. 20 h 0 . 33 0 . 51 b 4 . 70 5. 10 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 ref. d 0 8 l 1.35 1. 75 e 0.40 1.27 m 0.10 0 . 25 f 0. 10 0. 25 n 0.25 ref. g 1.27 typ. 07p06 = date code
elektronische bauelemente SSG07P06 -7a, -60v, r ds(o ) 40m ? p-ch enhancement mode power mosfet 19-apr-2017 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat condition s drain-source breakdown voltage bv dss -60 - - v v gs =0v, i d = -250ua gate threshold voltage v gs(th) -1 - -2.5 v v ds =v gs , i d = -250a forward transfer conductance g fs - 13 - s v ds = -5v, i d = -7a gate-body leakage i gss - - 100 na v ds =0v, v gs = 20v - - -1 a v ds = -48v, v gs =0v, t j =25c zero gate voltage drain current i dss - - -25 a v ds = -48v, v gs =0v, t j =125c - 33 40 v gs = -10v, i d = -7a drain-source on-resistance 3 r ds(on) - 45 50 ml v gs = -4.5v, i d = -5a total gate charge q g - 38.7 - gate-source charge q gs - 8.6 - gate-drain (miller) charge q gd - 9 - nc i d = -6.2a v ds = -30v v gs = -10v turn-on delay time t d(on) - 9.7 - rise time t r - 6.2 - turn-off delay time t d(off) - 34 - fall time t f - 14.3 - ns v dd = -30v i d = -6.2a v gs = -10v r g =3l r l =4.8l input capacitance c iss - 1910 - output capacitance c oss - 98.1 - reverse transfer capacitance c rss - 62.5 - pf v ds = -30v v gs =0 f=1mhz source-drain diode diode forward voltage 3 v sd - -0.72 -1.2 v v gs =0v , i s = -1a continuous source current 1 i s - - -4.2 a pulsed source current 2 i sm - - -16 a reverse recovery time t rr - 32 - ns reverse recovery charge q rr - 44 - nc i f = -6.2a , di/dt=100a/s,t j =25 notes: 1. surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. the power dissipation is limited by 150c juncti on temperature. 3. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2%.
elektronische bauelemente SSG07P06 -7a, -60v, r ds(o ) 40m ? p-ch enhancement mode power mosfet 19-apr-2017 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSG07P06 -7a, -60v, r ds(o ) 40m ? p-ch enhancement mode power mosfet 19-apr-2017 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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