? semiconductor components industries, llc, 2016 november, 2016 ? rev. 12 1 publication order number: ncv8401/d ncv8401a, ncv8401b self-protected low side driver with temperature and current limit ncv8401a/b is a three terminal protected low-side smart discrete device. the protection features incl ude overcurrent, overtemperature, esd and integrated drain-to-gate clamping for overvoltage protection. this device offers protection an d is suitable for harsh automotive environments. features ? short circuit protection ? thermal shutdown with automatic restart ? over voltage protection ? integrated clamp for inductive switching ? esd protection ? dv/dt robustness ? analog drive capability (logic level input) ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec?q100 qualified and ppap capable ? these devices are pb?free and are rohs compliant typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial device package shipping ? ordering information dpak case 369c style 2 drain source temperature limit gate input marking diagram y = year ww = work week xxxxx = 8401a or 8401b g = pb?free package current limit current sense overvoltage protection esd protection www. onsemi.com yww ncv xxxxxg *max current may be limited below this value depending on input conditions. 1 = gate 2 = drain 3 = source 1 2 3 v dss (clamped) r ds(on) typ i d max (limited) 42 v 23 m @ 10 v 33 a* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. ncv8401adtrkg dpak (pb?free) 2500/tape & ree l NCV8401BDTRKG dpak (pb?free) 2500/tape & ree l
ncv8401a, ncv8401b www. onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage internally clamped v dss 42 v drain?to?gate voltage internally clamped (r gs = 1.0 m ) v dgr 42 v gate?to?source v oltage v gs 14 v drain current ? continuous i d internally limited total power dissipation @ t a = 25 c (note 1) @ t a = 25 c (note 2) p d 1.1 2.0 w thermal resistance, junction?to?case junction?to?ambient (note 1) junction?to?ambient (note 2) r jc r ja r ja 1.6 110 60 c/w single pulse drain?to?source avalanche energy (v dd = 25 vdc, v gs = 5.0 vdc, i l = 3.65 apk, l = 120 mh, r g = 25 , t jstart = 150 c) (note 3) e as 800 mj load dump voltage (v gs = 0 and 10 v, r i = 2.0 , r l = 3.0 , t d = 400 ms) v ld 65 v operating junction temperature t j ?40 to 150 c storage temperature t stg ?55 to 150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. minimum fr4 pcb, steady state. 2. mounted onto a 2 square fr4 board (1 square, 2 oz. cu 0.06 thick single?sided, t = steady state). 3. not subject to production testing. drain source gate vds vgs i d i g + ? + ? figure 1. voltage and current convention
ncv8401a, ncv8401b www. onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source clamped breakdown voltage (v gs = 0 vdc, i d = 250 adc) (v gs = 0 vdc, i d = 250 adc, t j = 150 c) (note 4) v (br)dss 42 42 46 44 50 50 vdc zero gate voltage drain current (v ds = 32 vdc, v gs = 0 vdc) (v ds = 32 vdc, v gs = 0 vdc, t j = 150 c) (note 4) i dss 1.5 6.5 5.0 adc gate input current (v gs = 5.0 vdc, v ds = 0 vdc) i gssf 50 100 adc on characteristics gate threshold voltage (v ds = v gs , i d = 1.2 madc) threshold temperature coefficient v gs(th) 1.0 1.8 5.0 2.0 vdc ?mv/ c static drain?to?source on?resistance (note 5) (v gs = 10 vdc, i d = 5.0 adc, t j @ 25 c) (v gs = 10 vdc, i d = 5.0 adc, t j @ 150 c) (note 4) r ds(on) 23 43 29 55 m static drain?to?source on?resistance (note 5) (v gs = 5.0 vdc, i d = 5.0 adc, t j @ 25 c) (v gs = 5.0 vdc, i d = 5.0 adc, t j @ 150 c) (note 4) r ds(on) 28 50 34 60 m source?drain forward on voltage (i s = 5 a, v gs = 0 v) v sd 0.80 1.1 v switching characteristics (note 4) turn?on time (10% v in to 90% i d ) v in = 0 v to 5 v, v dd = 25 v i d = 1.0 a, ext r g = 2.5 t on 41 50 s turn?off time (90% v in to 10% i d ) t off 129 150 turn?on time (10% v in to 90% i d ) v in = 0 v to 10 v, v dd = 25 v , i d = 1.0 a, ext r g = 2.5 t on 16 25 turn?off time (90% v in to 10% i d ) t off 164 180 slew?rate on (80% v ds to 50% v ds ) v in = 0 to 10 v, v dd = 12 v, r l = 4.7 ?dv ds /dt on 1.27 2.0 v s slew?rate off (50% v ds to 80% v ds ) dv ds /dt off 0.36 0.75 self protection characteristics (t j = 25 c unless otherwise noted) current limit v gs = 5.0 v, v ds = 10 v v gs = 5.0 v, t j = 150 c (note 4) i lim 25 11 30 16 35 21 adc v gs = 10 v, v ds = 10 v v gs = 10 v, t j = 150 c (note 4) 30 18 35 25 40 28 temperature limit (turn?off) v gs = 5.0 v (note 4) t lim(off) 150 175 200 c thermal hysteresis v gs = 5.0 v t lim(on) 15 c temperature limit (turn?off) v gs = 10 v (note 4) t lim(off) 150 165 185 c thermal hysteresis v gs = 10 v t lim(on) 15 c gate input characteristics (note 4) device on gate input current v gs = 5 v i d = 1.0 a i gon 50 100 a v gs = 10 v i d = 1.0 a 400 700 current limit gate input current v gs = 5 v, v ds = 10 v i gcl 0.1 0.5 ma v gs = 10 v, v ds = 10 v 0.7 1.0 thermal limit fault gate input current v gs = 5 v, v ds = 10 v i gtl 0.6 1.0 ma v gs = 10 v, v ds = 10 v 2.0 4.0 esd electrical characteristics (t j = 25 c unless otherwise noted) (note 4) electro?static discharge capability human body model (hbm) machine model (mm) esd 4000 400 v 4. not subject to production testing. 5. pulse test: pulse width 300 s, duty cycle 2%.
ncv8401a, ncv8401b www. onsemi.com 4 typical performance curves figure 2. single pulse maximum switch?off current vs. load inductance figure 3. single pulse maximum switching energy vs. load inductance l (mh) l (mh) 100 10 1 10 100 100 10 100 1,000 10,000 v ds (v) v gs (v) 5 4 3 2 1 0 0 5 10 20 25 30 40 45 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 5 10 15 20 25 30 i l(max) (a) e max (mj) i d (a) i d (a) t jstart = 25 c t jstart = 150 c t jstart = 25 c t jstart = 150 c 15 35 v gs = 2.5 v 3 v 4 v 5 v 6 v 7 v 8 v 9 v 10 v ?40 c 25 c 100 c 150 c figure 4. single pulse maximum inductive switch?off current vs. time in clamp figure 5. single pulse maximum inductive switching energy vs. time in clamp time in clamp (ms) time in clamp (ms) 10 1 1 10 100 100 1 100 1,000 10,000 i l(max) (a) e max (mj) t jstart = 25 c t jstart = 150 c t jstart = 25 c t jstart = 150 c figure 6. on?state output characteristics at 25 c figure 7. transfer characteristics (v ds = 10 v)
ncv8401a, ncv8401b www. onsemi.com 5 typical performance curves figure 8. r ds(on) vs. gate?source voltage figure 9. r ds(on) vs. drain current v gs (v) i d (a) r ds(on) (m ) r ds(on) (m ) ?40 c 25 c 100 c 150 c ?40 c, v gs = 5 v ?40 c, v gs = 10 v 25 c, v gs = 5 v 25 c, v gs = 10 v 100 c, v gs = 5 v 100 c, v gs = 10 v 150 c, v gs = 5 v figure 10. normalized r ds(on) vs. temperature (i d = 5 a) figure 11. current limit vs. gate?source voltage (v ds = 10 v) t ( c) v gs (v) 120 100 80 40 20 0 ?20 ?40 0.50 0.75 1.00 1.25 1.50 1.75 2.00 figure 12. current limit vs. junction temperature (v ds = 10 v) figure 13. drain?to?source leakage current (v gs = 0 v) t j ( c) v ds (v) 4 0 35 30 25 20 15 10 0.0001 0.001 0.01 0.1 1 10 100 normalized r ds(on) i lim (a) i lim (a) i dss ( a) 60 ?40 c 25 c 100 c 140 ?40 c 25 c 100 c 150 c v gs = 5 v v gs = 10 v 10 20 30 40 50 60 70 80 345678910 10 15 20 25 30 35 40 45 13579 150 c, v gs = 10 v 15 20 25 30 35 40 45 56789 10 150 c 15 20 25 30 35 40 45 ?40 ?20 0 20 40 60 80 100 120 140 v gs = 5 v v gs = 10 v i d = 3 a
ncv8401a, ncv8401b www. onsemi.com 6 typical performance curves figure 14. normalized threshold voltage vs. temperature (i d = 1.2 ma, v ds = v gs ) figure 15. source?drain diode forward characteristics (v gs = 0 v) t ( c) i s (a) 140 100 60 40 20 0 ?20 ?40 0.6 0.7 0.8 0.9 1.0 1.1 1.2 8 7 6 5 4 3 2 1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 normalized v gs(th) (v) v sd (v) 80 120 910 ?40 c 25 c 100 c 150 c figure 16. resistive load switching time vs. gate?source voltage (v dd = 25 v, i d = 5 a, r g = 0 ) figure 17. resistive load switching drain?source voltage slope vs. gate?source voltage (v dd = 25 v, i d = 5 a, r g = 0 ) v gs (v) v gs (v) 10 9 8 7 6 5 4 3 0 50 100 150 200 10 9 8 7 6 5 4 3 0 0.5 1.0 1.5 2.0 figure 18. resistive load switching time vs. gate resistance (v dd = 25 v, i d = 5 a) figure 19. drain?source voltage slope during turn on and turn off vs. gate resistance (v dd = 25 v, i d = 5 a) r g ( )r g ( ) 2000 1500 1000 500 0 0 25 50 75 100 125 2000 1500 1000 500 0 0 0.2 0.4 0.6 0.8 1.4 1.6 2.0 time ( s) drain?source voltage slope (v/ s) time ( s) drain?source voltage slope (v/ s) t d(off) t d(on) t f t r ?dv ds /d t(on) dv ds /d t(off) t d(on) , v gs = 5 v t d(off) , v gs = 5 v t r , v gs = 5 v t f , v gs = 5 v t d(on) , v gs = 10 v t d(off) , v gs = 10 v t r , v gs = 10 v t f , v gs = 10 v 1.0 1.2 1.8 ?dv ds /d t(on) , v gs = 5 v dv ds /d t(off) , v gs = 5 v ?dv ds /d t(on) , v gs = 10 v dv ds /d t(off) , v gs = 10 v
ncv8401a, ncv8401b www. onsemi.com 7 typical performance curves 0.001 0.01 0.1 1 10 100 1e?06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (sec) r ja 788 mm 2 c /w, 2 oz. copper single pulse 50% duty cycle 20% 10% 5% 2% 1% copper heat spreader area (mm 2 ) r ja ( c/w) pcb cu thickness, 1.0 oz 25 50 75 100 125 150 175 300 400 500 600 700 800 figure 20. r ja vs. copper area 0 100 200 pcb cu thickness, 2.0 oz figure 21. transient thermal resistance 200 225 250 psi tab?a
ncv8401a, ncv8401b www. onsemi.com 8 test circuits and waveforms dut g d s rl vdd ids vin figure 22. resistive load switching test circuit rg + ? t on vin ids t off 10% 10% 90% 90% figure 23. resistive load switching waveforms
ncv8401a, ncv8401b www. onsemi.com 9 test circuits and waveforms vdd ids vin l vds tp figure 24. inductive load switching test circuit dut g d s rg + ? 0 v 5 v t av vin ids vds t p v ds(on) i pk 0 vdd v (br)dss figure 25. inductive load switching waveforms
ncv8401a, ncv8401b www. onsemi.com 10 package dimensions dpak case 369c issue f style 2: pin 1. gate 2. drain 3. source 4. drain 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* b d e b3 l3 l4 b2 m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.028 0.045 0.72 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 7. optional mold feature. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.114 ref 2.90 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw e bottom view z bottom view side view top view alternate constructions note 7 z ncv8401/d hdplus is a trademark of semiconductor components industries, llc (scillc). p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ?
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