du.(itoi ^products., qna. 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 powe r fiel d effec t transisto r n-channe l enhancement-mod e silico n gat e tmo s thes e tmo s powe r fet s ar e designe d fo r hig h voltage , hig h spee d powe r switchin g application s suc h a s switchin g regulators , converters , solenoi d an d rela y drivers . ? silico n gat e fo r fas t switchin g speed s switchin g time s specifie d a t 100 c ? designer' s dat a idss - v ds(on) ' vqs(th ) an d so a specifie d a t elevate d temperatur e ? rugge d so a i s powe r dissipatio n limite d ? sourc e to-dral n diod e characterize d fo r us e wit h inductiv e load s maximu m rating s ratin g drain-sourc e voltag e drain-gat e voltag e (rq s - 1 mn ) gate-sourc e voltag e continuou s non-repetitiv e (t p < g o ps ) drai n curren t continuou s pulse d tota l pows r dissipatio n @ t c = 25' c derat e abov e 25 c operatin g an d storag e temperatur e rang e symbo l vds s vdg r vg s vgs m i d id m p d tj . t st g mth6n5 5 65 0 55 0 mthsn6 0 mtm6n6 0 60 0 60 0 2 0 4 0 6 3 0 15 0 1. 2 -6 6 t o 16 0 uni t vd c vd c vd c vp k ad c watt s w/- c c therma l characteristic s therma l resistanc e junctio n t o cag e junctio n t o ambien t maximu m lea d temperatur e fo r solderin g purposes , 1/8 " fro m caa e fo r 6 second s rflj c rsj a t l 27 5 ?c/ w c electrica l characteristic s |t c - 25' c unles s otherwis e noted ) characteristi c symbo l ml n ma x uni t of f characteristic s drain-sourc e breakdow n voltag e (vg s - 0 , i d = 0.2 5 ma ) mth6n5 5 mth6n60 , mtm6n6 0 zer o gat e voltag e drai n curren t (v o s = rate d vdss . vg s = 0 ) (vd s - - 8 ra|st l v dss ' vq s = . t j = "5 - o vibrids s bs s 55 0 eo o - - 0. 2 1 vd c mad c mth6n5 5 mth6n6 0 mtm6n6 0 tmo s powe r fet s 6 ampere s 'ds(on ) = 1- 2 ohm s 55 0 an d 60 0 volt s mtm6n6 0 to-204a a n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice. informatio n furnishe d b y n. i semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s use . n j semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e placing orders . ounlit v s*?mi-fv?nrlii?"tr?r ? downloaded from: http:///
mth/mtm6n55 , 6 0 electrica l characteristic s continue d |t c - 25 c unles s otherwis e noted ) characteristi c symbo l of f characteristic s gate-bod y leakag e current , forwar d (v gs f = 2 0 vdc , v d s - o ) gate-bod y leakag e current , revers e (vgs r = 2 0 vdc , v d s = 0 1 'gss f igss r wi n ma x uni t 10 0 10 0 nad c nad c o n characteristics * gat e threshol d voltag e (vd s - v gs . i d ? ' nv y t j = 100' c stati c drain-sourc e on-resistanc e (vg s - 1 0 vdc , i d ? 3 adc ) drain-sourc e on-voltag e (vg s "10v ) (i d - 6 adc ) (i d = 3 adc , t j = 100c ) forwar d transconductanc e (vd s - 15v , i q - 3a ) vgs(th ) 'ds(on ) vds(on ) 9f s 2 1. 5 - 2 4. 5 4 1. 2 9 7. 2 - vd c ohm s vd c mho s dynami c characteristic s inpu t capacitanc e outpu t capacitanc e reverse transfe r capacitanc e (vd s - 2 6 v , vq s = o . f - 1 mhz ) se e figur e 1 1 cis s cob s cr ? - | 180 0 35 0 15 0 p f switchin g characteristics * (t j - 100c i turn-o n dela y tim e ris e tim e turn-of f dela y tim e fai l tim e tota l gat e charg e gate-sourc e charg e gate-drai n charg e (vot ) = 2 5 v , i d - 0. 6 rate d i d rge n " 6 0 ohms ) se e figure s 1 3 an d 1 4 (vd s - 0- 8 rate d vdss . i d - rate d id , vq s - 1 0 v ) se e figur e 1 2 'd(on ) t r td(off ) < f q o q 9 s og d _ 6 6 (typ ) 2 b ftyp ) 3 0 (typ ) 6 0 16 0 20 0 12 0 6 5 ? - n s n c sourc e drai n diod e characteristics * forwar d on-voltag e forwar d turn-o n tim e revers e recover y tim e (i s = rate d i d vq s - 0 ) vs d io n 'r r 1 (typ ) 1. 4 vd c limite d b y stra y inductanc e 60 0 (typ ) - n s interna l packag e inductanc e (to-204 ) interna l drai n inductanc e (measure d fro m th e contac t scre w o n th e heade r close r t o th e sourc e pi n an d th e cente r o f th e die ) interna l sourc e inductanc e (measure d fro m th e sourc e pin , 0.25 ' fro m th e packag e t o th e sourc e bon d pan ) l d l 3 5 (typ ) 12. 6 (typ l " n h interna l packag e inductanc e (to-218 ) interna l drai n inductanc e (measure d fro m scre w o n ta b t o cente r o f die ) (measure d fro m th e drai n lea d 0.26 " fro m packag e t o cente r o f die ) interna l sourc e inductanc e (measure d fro m th e sourc e lea d 0,25 " fro m package t o cente r o f die ) l d l 8 4 (typ ) 6 (typ ) 1 0 (typ ) _ n h ?puls e test : puls e widt h ? 30 0 ia. dut y cycl e ? 2% . downloaded from: http:///
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