smd type www.kexin.com.cn 1 diodes sod-523 unit: mm 0.77max 0.6 +0.1 -0.1 0.3 +0.05 -0.05 0.8 +0.05 -0.05 1.2 +0.1 -0.1 1.6 +0.1 -0.1 0.1 +0.05 -0.02 0.07max +- silicon epitaxial trench pin diode HVC135 features adopting the trench structure improves low capacitance.(c=0.6pf max) low forward resistance. (rf=2.0 max) low operation current. absolute maximum ratings ta = 25 parameter symbol value unit peak reverse voltage v rm 65 v reverse voltage v r 60 v forward current i f 100 ma power dissipation p d 150 mw junction temperature t j 125 storage temperature t stg -55 to +125 electrical characteristics ta = 25 parameter symbol conditions min typ max unit reverse current i r v r =60v 0.1 a reverse voltage v f i f =2ma 0.9 v capacitance c v r =1v,f=1mhz 0.6 pf forward resistance r f i f = 2 ma, f = 100 mhz 2.0 note 1. failure criterion ; i r > 100 na at v r =60v. v esd-capability *1 c =200pf, both forward and reversedirection1pulse 100 marking marking p5
|
