? semiconductor components industries, llc, 2012 september, 2012 ? rev. 8 1 publication order number: baw56lt1/d baw56lt1g, sbaw56lt1g, baw56lt3g, SBAW56LT3G dual switching diode common anode features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (each diode) rating symbol value unit reverse voltage v r 70 v forward current i f 200 ma peak forward surge current i fm(surge) 500 ma non ? repetitive peak forward current t = 1 s (note 3) i fsm 4 a thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction ? to ? ambient r ja 556 c/w total device dissipation alumina substrate, (note 2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction ? to ? ambient r ja 417 c/w junction and storage temperature t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. square wave; t j = 25 c. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. anode 3 cathode 1 2 cathode http://onsemi.com marking diagram device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1 a1 m sot ? 23 (to ? 236) case 318 style 12 a1 = device code m = date code* = pb ? free package baw56lt1g sot ? 23 (pb ? free) 3,000 / tape & reel baw56lt3g sot ? 23 (pb ? free) 10,000 / tape & reel *date code orientation and/or overbar may vary depending upon manufacturing location. (note: microdot may be in either location) sbaw56lt1g sot ? 23 (pb ? free) 3,000 / tape & reel SBAW56LT3G sot ? 23 (pb ? free) 10,000 / tape & reel
baw56lt1g, sbaw56lt1g, baw56lt3g, SBAW56LT3G http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit reverse breakdown voltage (i (br) = 100 a) v (br) 70 ? v reverse voltage leakage current (v r = 25 v, t j = 150 c) (v r = 70 v) (v r = 70 v, t j = 150 c) i r ? ? ? 30 2.5 50 a diode capacitance (v r = 0 v, f = 1.0 mhz) c d ? 2.0 pf forward voltage (i f = 1.0 ma) (i f = 10 ma) (i f = 50 ma) (i f = 150 ma) v f ? ? ? ? 715 855 1000 1250 mv reverse recovery time (i f = i r = 10 ma, i r(rec) = 1.0 ma) (figure 1) r l = 100 t rr ? 6.0 ns notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit
baw56lt1g, sbaw56lt1g, baw56lt3g, SBAW56LT3G http://onsemi.com 3 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 1.75 0 v r , reverse voltage (volts) 1.5 1.25 1.0 0.75 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( a) curves applicable to each cathode
baw56lt1g, sbaw56lt1g, baw56lt3g, SBAW56LT3G http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 style 12: pin 1. cathode 2. cathode 3. anode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 baw56lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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