lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 1 of 7 preliminary datasheet lpm 9 0 2 1 single p - channel, - 12v, - 6.5a, power mosfet general description the LPM9021 is p - channel enhancement mos f et effect transistor. it u ses advanced trench technology and design to provide excellent rds (on) with low gate charge. this device is suitable for us ing in dc - dc conversion, power switch and charging circuit. standard product LPM9021qvf is pb - free and halogen - free. order information lpm 90 2 1 f: pb - free package type qv : dfn2*2 - 6l pin configurations features ? trench technology ? super high density cell design ? excellent on resistance for higher dc current ? extremely low threshold voltage ? small package dfn2*2 - 6l applications ? driver for relay, solenoid, motor, led etc. ? dc - dc converter circuit ? power switch ? load switch ? charging marking information device marking package shipping LPM9021qvf dfn2*2 - 6l 3k/reel pin descri p tion pin number pin description 1,2 drain pin 3 gate pin 4 source pin 5,6 drain pin 1 2 3 4 5 6 d s d d g d d s
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 2 of 7 preliminary datasheet lpm 9 0 2 1 absolute maximum ratings parameter symbol 10 s steady state unit drain - source voltage vds - 12 v gate - source voltage vgs 12 continuous drain current t a =25 c id - 6.5 - 5.6 a t a =70 c - 5.2 - 4.4 maximum power dissipation t a =25 c pd 1.9 1.4 w t a =70 c 1.2 0.9 continuous drain current t a =25 c id - 4.8 - 3.9 a t a =70 c - 3.8 - 3.9 maximum power dissipation t a =25 c pd 1.0 0.6 w t a =70 c 0.6 0.4 pulsed drain current c idm - 24 a operating junction temperature tj 150 c lead temperature tl 260 c storage temperature range tstg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit junction - to - ambient thermal resistance t 10 s r ja 49 64 c/w steady state 66 88 junction - to - ambient thermal resistance t 10 s r ja 84 118 steady state 125 180 junction - to - case thermal resistance steady state r jc 32 42 a surface mounted on fr - 4 board using 1 square inch pad size, 1oz copper b surface mounted on fr - 4 board using minimum pad size, 1oz copper c pulse width<380 s, duty cycle<2% d maximum junction temperature tj=150 c.
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 3 of 7 preliminary datasheet lpm 9 0 2 1 electrical characteristics parameter symbol test condition min typ . max units off characteristics drain - to - source breakdown voltage bv dss v gs = 0 v, i d = - 250ua - 12 v zero gate voltage drain current i dss v ds = - 12v, v gs = 0v - 1 ua gate - to - source leakage current i gss v ds = 0 v, v gs = ? 12v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = - 250ua - 0. 4 - 0.52 - 0. 9 v drain - to - source on - resistance b, c r ds(on) v gs = - 4.5v, i d = - 5.5a 23 29 m v gs = - 2.5v, i d = - 2.5a 30 39 v gs = - 1.8v, i d = - 1.8a 39 50 v gs = - 1.5v, i d = - 1.5a 48 90 forward transconductance g fs v ds = - 5.0v, i d = - 5.5a 23 s capacitances, charges input capacitance c iss v gs = 0 v, f = 1.0 mhz v ds = - 10 v 1970 pf output capacitance c oss 205 reverse transfer capacitance c rss 195 total gate charge q g(tot) v gs = - 4.5 v, v ds = - 10 v, i d = - 6.5a 21.0 nc threshold gate charge q g(th) 0.95 gate - to - source charge q gs 1.30 gate - to - drain charge q gd 7.60 switching characteristics turn - on delay time td(on) v gs = - 4.5 v, v dd = - 10 v, i d = - 6.5a, r g =6 ? 16 ns rise time tr 15.5 turn - off delay time td(off) 78 fall time tf 44 body diode characteristics forward voltage v sd v gs = 0 v, i s = - 1.0a - - 0.76 1.5 v
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 4 of 7 preliminary datasheet lpm 9 0 2 1 typical characteristics ( ta=25 , unless otherwise noted )
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 5 of 7 preliminary datasheet lpm 9 0 2 1
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 6 of 7 preliminary datasheet lpm 9 0 2 1
lp m 90 2 1 - 01 may . - 20 13 email: marketing@lowpowersemi.com www.lowpowersemi.com page 7 of 7 preliminary datasheet lpm 9 0 2 1 packag ing information top view side view bottom view symbol dimensions in millimeter min typ max a 0.70 0.75 0.80 a1 0.00 - 0.05 a3 0.203 ref. d 1.95 2.00 2.05 e 1.95 2.00 2.05 d2 0.85 0.90 0.95 e2 0.75 0.80 0.85 d3 0.25 0.30 0.35 e3 0.51 0.56 0.61 b 0.25 0.30 0.35 l 0.30 0.35 0.40 e 0.65 bsc.
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