preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 1 of 7 lpm9 0 1 7 - - 30v/4a p - channel enhancement mode field effect transistor general description the lpm90 1 7 is the p - channel logic enhancement mode power field effect transistors are produced using high cell density, dmos tren ch technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application, notebook computer power management and other batt ery powered circuits where high - side switch ing. ordering information lpm90 1 7 - f: pb - free package type b3 : s o t23 features - 3 0v/ - 4 a,r d s (on) 5 8 m (typ.)@v gs = - 10 v - 3 0v/ - 3 .0a,r d s (on) 68 m (typ.)@v gs = - 4.5v super high density cell design for extremely low r d s (on) so t23 package applications ? portable media players ? cellular and smart mobile phone ? lcd ? dsc sensor ? wireless card ? marking information please see website. pin configurations so t23 l (top view)
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 2 of 7 functional pin description
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 3 of 7
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 4 of 7
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 5 of 7
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 6 of 7
preliminary datasheet lp m9 0 1 7 lp m9 0 1 7 C 00 ver sion 1.0 d atasheet dec. - 200 8 www.lowpowersemi.com page 7 of 7 packaging information
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