features marking: 1 h igh diode semiconductor sot- 23 ?? ? electrical characteristics (ta =25 unless otherwise specified b3 1ss1 84 swi tching diodes sot-23 plastic-encap sulate diodes low forward voltage fast reverse recovery time 1 2 3 applications ?? extreme fast switches 1 2 3 non - repetitive peak r everse v oltage v rm 85 v dc blo ckin g voltage v r 80 v forw a rd continuous current i fm 300 ma av e rage rectified output current i o 100 ma pow e r dissipation p d 150 mw junc tion t emperature t j 150 f or w ard s urge c urrent @ t =8.3 ms i fsm 2.0 a non - repetitive peak parameter symbol limit unit st o rage t emperature r ange t st g -55 ~+ 150 t h e rmal resistance from junction to ambient r ja /w 833 parameter sy mbol min typ max unit conditions reve rse b reakdown v oltage v (br ) 80 v i r =100 a v f1 0.60 v i f =1ma v f2 0.72 v i f =10ma forw a rd voltage v f3 0.9 1.2 v i f =100ma i r1 0.1 ua v r =30v rev e rse current i r2 0.5 ua v r =80v capacita nce between terminals c t 0.9 3.0 pf v r =0,f=1mhz rev e rse recovery time t rr 1.6 4.0 ns i f =i r =10ma,i rr =0.1 i r
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