vrf148a VRF148AMP 50v, 30w, 175mhz the vrf148a is a gold-metallized silicon n-channel rf power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features improved ruggedness v (br)dss = 170 v 30w with 20db typical gain @ 30mhz, 50v 30w with 16db typical gain @ 175mhz, 50v excellent stability & low imd common source con? guration available in matched pairs 30:1 load vswr capability at speci? ed operating conditions nitride passivated refractory gold metallization high voltage replacement for mrf148a rohs compliant symbol parameter vrf148a(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 6 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 115 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci? ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 1ma) 170 v v ds(on) on state drain voltage (i d(on) = 2.5a, v gs = 10v) 3.0 5.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 0.1 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 2.5a) 0.8 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 10ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com 050-4943 rev c 9-2010 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 1.52 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. downloaded from: http:///
0.1 1 10 1 10 100 200 vrf148a(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 160 pf c oss output capacitance v ds = 50v 40 c rss reverse transfer capacitance f = 1mhz 2.6 class a characteristics symbol test conditions min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep 20 db imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -50 imd (d9-d13) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 1.0a, p out = 10w pep -70 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, v dd = 50v, i dq = 100ma, p out = 30w 18 db g ps f 1 = 175mhz, v dd = 50v, i dq = 100ma, p out = 30w 16 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, 30 w pep 40 % f 1 = 30mhz, v dd = 50v, i dq = 100ma, 30 w cw 50 imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, p out = 30w pep 1 -35 -28 db imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 100ma, p out = 30w pep -60 f 1 = 30mhz, f 2 = 30.001mhz ,v dd = 50v, i dq = 100ma, p out = 300w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci? cations and information contained herein. 050-4943 rev c 9-2010 0 10 20 30 40 50 60 0 5 10 15 20 25 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 1 10 100 0 10 20 30 40 50 60 v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) v gs , gate-to-source voltage (v) figure 2, transfer characteristics typical performance curves 4v 5v 6v 7v 8v 9v 10v 13v t j = 125c 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c iss c oss c rss r ds(on) t j = 125c t c = 75c pdmax i dmax downloaded from: http:///
? 50 ? 45 ? 40 ? 35 ? 30 0 10 20 30 40 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 0 ? 50 ? 45 ? 40 ? 35 ? 30 0 10 20 30 40 vrf148a(mp) 050-4943 rev c 9-2010 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -5 10 -4 10 -3 10 -2 10 1.0 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration typical performance curves p out , output power (watts pep) figure 7. imd versus p out imd, intermodulation distortion (db) output power (w pep ) p out , input power (watts pep) figure 8. p in versus p out output power (w pep ) p out , input power (watts pep) figure 9. p in versus p out vdd=28v, idq = 250ma, freq=175mhz im3 im5 0 10 20 30 40 50 60 0 1 2 3 4 5 vdd=28v, idq = 250ma, freq=30mhz vdd=28v, idq = 250ma, freq=175mhz p out , output power (watts pep) figure 6. imd versus p out imd, intermodulation distortion (db) vdd=28v, idq = 250ma, freq=30mhz im3 im5 downloaded from: http:///
vrf148a(mp) 050-4943 rev c 9-2010 30 mhz test circuit 175 mhz test circuit downloaded from: http:///
pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain m113 package outline .375? soe all dimensions to be .005 dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.370 0.390 9.40 9.90 c 0.229 0.281 5.82 7.13 d 0.215 0.235 5.47 5.96 e 0.085 0.105 2.16 2.66 h 0.150 0.108 3.81 4.57 j 0.004 0.006 0.11 0.15 k 0.395 0.405 10.04 10.28 m4 05 0 4 0 50 q 0.113 0.130 2.88 3.30 r 0.245 0.255 6.23 6.47 s 0.790 0.810 20.07 20.57 u 0.720 0.730 18.29 18.54 a u m m q r b 1 43 2 d k e c j h s vrf148a(mp) 050-4943 rev c 9-2010 adding mp at the end of p/n speci ? es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%. downloaded from: http:///
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