vishay siliconix SI4941EDY new product document number: 74248 s-72693-rev. b, 24-dec-07 www.vishay.com 1 dual p-channel 30-v (d-s) mosfet features ? trenchfet ? power mosfet ? esd protection: 2500 v applications ? load switch for portable devices ? battery and load switching for notebooks product summary v ds (v) r ds(on) ( )i d (a) q g (typ) - 30 0.021 at v gs = - 10 v - 10 a 26 nc 0.031 at v gs = - 4.5 v - 10 a d s g 7 k d s g 7 k 1 1 1 2 2 2 s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 so-8 5 6 7 8 top v ie w 2 3 4 1 orderin g information: SI4941EDY-t1-e3 (lead (p b )-free) notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 10 s. d. maximum under steady state conditions is 110 c/w absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d - 10 a a t c = 70 c - 8.8 t a = 25 c - 8.3 b, c t a = 70 c - 6.6 b, c pulsed drain current i dm - 30 continuous source-drain diode current t c = 25 c i s - 3 t a = 25 c - 1.7 b, c maximum power dissipation t c = 25 c p d 3.6 w t c = 70 c 2.3 t a = 25 c 2 b, c t a = 70 c 1.3 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, c t 10 s r thja 45 62.5 c/w maximum junction-to-foot (drain) steady state r thjf 26 35 rohs compliant
www.vishay.com 2 document number: 74248 s-72693-rev. b, 24-dec-07 vishay siliconix SI4941EDY new product notes: a. pulse test; pulse width 300 s, duty cycle 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v v ds temperature coefficient v ds /t j i d = - 250 a - 33 mv/c v gs(th) temperature coefficient v gs(th) /t j 4.2 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.2 - 2.8 v gate-source leakage i gss v ds = 0 v, v gs = 10 v 20 a v ds = 0 v, v gs = 20 v 1 ma zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 10 v - 30 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 8.3 a 0.017 0.021 v gs = - 4.5 v, i d = - 6.8 a 0.025 0.031 forward transconductance a g fs v ds = - 15 v, i d = - 8.3 a 26 s dynamic b total gate charge q g v ds = - 15 v, v gs = - 10 v, i d = - 8.3 a 46 70 nc v ds = - 15 v, v gs = - 4.5 v, i d = - 8.3 a 26 39 gate-source charge q gs 6.7 gate-drain charge q gd 14 gate resistance r g f = 1 mhz 7.3 k turn-on delay time t d(on) v dd = - 15 v, r l = 2.3 i d ? - 6.6 a, v gen = - 4.5 v, r g = 1 16 24 s rise time t r 60 90 turn-off delay time t d(off) 11 17 fall time t f 24 36 turn-on delay time t d(on) v dd = - 15 v, r l = 2.3 i d ? - 6.6 a, v gen = - 10 v, r g = 1 5.5 9 rise time t r 11 20 turn-off delay time t d(off) 30 45 fall time t f 24 40 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 10 a pulse diode forward current i sm 30 body diode voltage v sd i s = - 2.1 a, v gs = 0 v - 0.83 - 1.2 v
document number: 74248 s-72693-rev. b, 24-dec-07 www.vishay.com 3 vishay siliconix SI4941EDY new product typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0 6 12 1 8 24 30 012345 v gs = 10 thr u 4 v v ds - drain-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 3 v ( ) e c n a t s i s e r - n o - r ) n o ( s d 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0 . 040 0 6 12 1 8 24 30 i d - drain c u rrent (a) v gs = 10 v v gs = 4.5 v 0.6 0. 8 1.0 1.2 1 . 4 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 8 .3 a t j - j u nction temperat u re (c) ) d e z i l a m r o n ( e c n a t s i s e r - n o - r ) n o ( s d transfer characteristics gate charge source-drain diode forward voltage 0 6 12 1 8 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t c = 125 c - 55 c 25 c v gs - gate-to-so u rce v oltage ( v ) ) a ( t n e r r u c n i a r d - i d 0 2 4 6 8 10 ) v ( e g a t l o v e c r u o s - o t - e t a g - q g - total gate charge (nc) v s g i d = 8 .3 a v ds = 15 v i d = 8 .3 a v ds = 24 v 50 40 30 20 10 0 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c 40 10 1 v sd - so u rce-to-drain v oltage ( v ) ) a ( t n e r r u c e c r u o s - i s t j = 25 c
www.vishay.com 4 document number: 74248 s-72693-rev. b, 24-dec-07 vishay siliconix SI4941EDY new product typical characteristics 25 c, unless otherwise noted on-resistance vs. gate-source voltage single pulse power 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 0246 8 10 v gs - gate-to-so u rce v oltage ( v ) r ) n o ( s d m ( e c n a t s i s e r - n o e c r u o s - o t - n i a r d -) i d = 8 .3 a 25 c 125 c 0 30 5 0 10 20 ) w ( r e w o p time (s) 40 1 100 600 10 10 -1 10 -2 threshold variance safe operating area - 2.4 - 2.2 - 2 - 1. 8 - 1.6 - 1.4 - 50 - 25 0 25 50 75 100 125 150 t j - temperat u re (c) v ) h t ( s g ) v ( * v gs minim u m v gs at w hich r ds(on) is specified 100 0.01 10 ) a ( t n e r r u c n i a r d - i d 0.1 v ds - drain-to-so u rce v oltage ( v ) 1 0.1 1 10 100 limited b y r ds(on) * t = 25 c single p u lse b v dss limited p(t) = 1 s p(t) = 10 s dc p(t) = 10 ms p(t) = 100 ms p(t) = 1 ms a
document number: 74248 s-72693-rev. b, 24-dec-07 www.vishay.com 5 vishay siliconix SI4941EDY new product typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determ ine the current rating, when this rating falls below the package limit. current derating* 0 2 4 6 8 t c - case temperat u re (c) drain c u rrent (a) 0 25 50 75 100 125 150 10 12 package limited power derating 0 1 2 3 4 t c - case temperat u re (c) ) w ( n o i t a p i s s i d r e w o p 25 50 75 100 125 150
www.vishay.com 6 document number: 74248 s-72693-rev. b, 24-dec-07 vishay siliconix SI4941EDY new product typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74248 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t 1. d u ty cycle, d = 2. per unit base = r thja = 8 5 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 1 10 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) t n e i s n a r t e v i t c e f f e d e z i l a m r o n e c n a d e p m i l a m r e h t
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