s5a-m3, s5b-m3, s5d-m3, s5g- m3, s5j-m3, s5k-m3, S5M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 1 document number: 89921 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount glass passivated rectifier features ? low profile package ? ideal for automated placement ? glass passivated pellet chip junction ? low forward voltage drop ? low leakage current ? high forward surge capability ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in general purpose rect ification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. mechanical data case: do-214ab (smc) ? molding compound meets ul 94 v-0 flammabi lity rating ? base p/n-m3 - halogen-free, rohs-compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes cathode end primary characteristics i f(av) 5.0 a v rrm 50 v, 100 v, 200 v, 400 v, 600 v, 800 v, 1000 v i fsm 100 a i r 10 a v f 1.15 v t j max. 150 c package do-214ab (smc) diode variatio ns single die do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol s5a s5b s5d s5g s5j s5k s5m unit device marking code 5a 5b 5d 5g 5j 5k 5m max. repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v max. rms voltage v rms 35 70 140 280 420 560 700 v max. dc blocking voltage v dc 50 100 200 400 600 800 1000 v max. average forward rectified current at t l = 75 c i f(av) 5.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a operating junction and storage temperature range t j , t stg -55 to +150 c
s5a-m3, s5b-m3, s5d-m3, s5g- m3, s5j-m3, s5k-m3, S5M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 2 document number: 89921 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to lead mounted on pcb with 0.3" x 0.3" (8.0 mm x 8.0 mm) copper pad area ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - max. non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol s5a s5b s5d s5g s5j s5k s5m unit max. instantaneous ? forward voltage 5.0 a v f 1.15 v max. dc reverse current at rated dc blocking voltage t a = 25 c i r 10 a t a = 125 c 250 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, ? i rr = 0.25 a t rr 2.5 s typical junction capacitance 4.0 v, 1 mhz c j 40 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol s5a s5b s5d s5g s5j s5k s5m unit typical thermal resistance (1) r ? jl 10 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode s5j-m3/57t 0.211 57t 850 7" diameter plastic tape and reel s5j-m3/9at 0.211 9at 3500 13" diameter plastic tape and reel 0 25 50 75 100 125 150 lead temperat u re (c) 6 5 4 3 2 1 0 a v erage for w ard c u rrent (a) 1 100 10 100 10 1000 n u m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t l = 75 c 8 .3 ms single half sine-wa v e
s5a-m3, s5b-m3, s5d-m3, s5g- m3, s5j-m3, s5k-m3, S5M-M3 www.vishay.com vishay general semiconductor revision: 19-feb-16 3 document number: 89921 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse characteristics fig. 5 - typical j unction capacitance ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? package outline dimensions in inches (millimeters) instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) 100 10 1 0.1 0.01 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 p u lse width = 300 s 1 % d u ty cycle t j = 150 c t j = 125 c t j = 25 c instantaneo u s re v erse c u rrent (a) percent of rated peak re v erse v oltage (%) 0 204060 8 0 100 1000 100 10 1 0.1 0.01 t j = 150 c t j = 125 c t j = 25 c re v erse v oltage ( v ) j u nction capacitance (pf) 100 10 0.1 1 10 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p cathode band do-214ab ( s mc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pa d layout 0.126 (3.20) min. 0.060 (1.52) min. 0.185 (4.69) max. 0.320 (8.13) ref.
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