2001. 7. 20 1/3 semiconductor technical data kta2014v epitaxial planar pnp transistor revision no : 0 general purpose application. switching application. features excellent h fe linearity : h fe (0.1ma)/h fe (2ma)=0.95(typ.). low noise : nf=1db(typ.), 10db(max.). complementary to ktc4075v. very small package. maximum rating (ta=25 ) dim millimeters a b d e vsm 1.2 0.05 0.8 0.05 0.5 0.05 0.3 0.05 1.2 0.05 0.8 0.05 0.40 0.12 0.05 c g h j k 0.2 0.05 b e d g a h k c j 2 3 1 p p p 5 1. emitter 2. base 3. collector + _ + _ + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v collector current i c -150 ma base current i b -30 ma collector power dissipation p c 100 mw junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-50v, i e =0 - - -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -0.1 a dc current gain h fe (note) v ce =-6v, i c =-2ma 70 - 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - -0.1 -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 - - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 4 7 pf noise figure nf v ce =-6v, i c =-0.1ma f=1khz, rg=10k - 1.0 10 db note : h fe classification o(2):70 140, y(4):120 240, gr(6):200 400 h rank type name marking s fe
2001. 7. 20 2/3 kta2014v revision no : 0
2001. 7. 20 3/3 kta2014v revision no : 0 collector power dissipation p (mw) 0 c 0 ambient temperature ta ( c ) pc - ta 25 50 75 100 125 50 100 150 200 150
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