sot-723 1 . base 2 . emitter 3. collector jiangsuchangjiang electronic s technology co., ltd sot-723 plastic-encapsulate transistors 2SC5658 general purpose transistors (npn) features z low c ob z complements the 2sa2029 marking: bq,br,bs absolute maximum ratings (t a =25 unless otherwise noted) symbol parameter limit unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector dissipation 100 mw t j junction temperature 150 t stg storage temperature -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current transfer ratio h fe v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =2ma, f=100mhz 180 mhz output capacitance c ob v cb =12v,i e =0, f=1mhz 3.5 pf classification of h fe rank q r s range 120~270 180~390 270~560 www.cj-elec.com 1 d , nov ,2014
1 10 100 10 100 1000 0.1 1 10 100 100 1000 0 25 50 75 100 125 150 0 25 50 75 100 125 0.1 1 10 100 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 0.1 1 10 0.0 0.3 0.6 0.9 1.2 1 10 100 012345678 0 1 2 3 4 5 6 7 , & i 7 2 2 common emitter v ce =12v t a =25 collector current i c (ma) transition frequency f t (mhz) =10 , & 9 % ( v d w 2 2 base-emitter saturation voltage v besat (mv) collector curremt i c (ma) t a =100 t a =25 2000 3 & 2 2 7 d ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 , & 9 & |